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Efficient preparation method of hexagonal CuInS2/ZnS semiconductor thick nano plate

A hexagonal, nano-plate technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve problems such as limited applications

Inactive Publication Date: 2020-05-05
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the best-studied semiconducting nanomaterials so far (such as cadmium and lead chalcogenides) are highly toxic, which severely limits their application possibilities.

Method used

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  • Efficient preparation method of hexagonal CuInS2/ZnS semiconductor thick nano plate
  • Efficient preparation method of hexagonal CuInS2/ZnS semiconductor thick nano plate
  • Efficient preparation method of hexagonal CuInS2/ZnS semiconductor thick nano plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0021] (1) Preparation of CuInS with an average size of 3nm 2 / ZnS nano core, purified and dissolved in TOP to obtain a TOP / NCs solution, the concentration of the nano core in the TOP / NCs solution is 75nmol / mL; figure 1 For the obtained CuInS 2 / Transmission electron microscope image of ZnS nanocore;

[0022] (2) Under an argon atmosphere, mix sulfur powder (S) with TOP, and sonicate until a clear TOP / S solution is obtained, and the concentration of sulfur in the TOP / S solution is 2.5mol / L;

[0023] (3) Get the TOP / S solution 2.4mL in the step (2) and the TOP / NCs solution in the 1.2mL step (1) and mix to obtain tri-n-octyl phosphorus / nano core / sulfur powder (TOP / NCs / S) mixed solution;

[0024] (4) Take 8.5mmol of tri-n-octylphosphine, add 2mmol of zinc oxide (ZnO) and 10mmol of oleic acid, heat to 120°C for 60 minutes under argon atmosphere, and then raise the temperature to 350°C to make the reactant become clear solution;

[0025] (5) Inject the mixed solution of TOP / N...

Embodiment approach 2

[0027] (1) Preparation of CuInS with an average size of 3.5nm 2 / ZnS nano core, purified and dissolved in TOP to obtain TOP / NCs solution, the concentration of nano core in the TOP / NCs solution is 83.3nmol / mL;

[0028] (2) Under an argon atmosphere, mix sulfur powder (S) with TOP, and sonicate until a clear TOP / S solution is obtained, and the concentration of sulfur in the TOP / S solution is 2.3mol / L;

[0029] (3) Get the TOP / S solution 2.35mL in the step (2) and mix with the TOP / NCs solution in the 0.96mL step (1) to obtain tri-n-octyl phosphorus / nano core / sulfur powder (TOP / NCs / S) mixed solution;

[0030] (4) Take 8.3mmol of tri-n-octylphosphine, add 1.8mmol of zinc oxide (ZnO) and 9mmol of oleic acid, heat to 125°C for 50 minutes under argon atmosphere, and then raise the temperature to 345°C to make the reactant become clear The solution;

[0031] (5) Inject the mixed solution of TOP / NCs / S in step (3) into the product in step (4), set the reaction temperature to 320°C, re...

Embodiment approach 3

[0033] (1) Preparation of CuInS with an average size of 3.3nm 2 / ZnS nano core, purified and dissolved in TOP to obtain TOP / NCs solution, the concentration of nano core in the TOP / NCs solution is 61.5nmol / mL;

[0034] (2) Under an argon atmosphere, mix sulfur powder (S) with TOP, and sonicate until a clear TOP / S solution is obtained, and the concentration of sulfur in the TOP / S solution is 4.5mol / L;

[0035] (3) get the TOP / S solution 3.4mL in the step (2) and the TOP / NCs solution in the 3.3mL step (1) and mix, obtain trin-octyl phosphorus / nano core / sulfur powder (TOP / NCs / S) mixed solution;

[0036] (4) Take 20mmol of tri-n-octylphosphine, add 5mmol of zinc oxide (ZnO) and 25.5mmol of oleic acid, heat to 130°C for 60 minutes under argon atmosphere, and then raise the temperature to 340°C to make the reactant become clear solution;

[0037] (5) Inject the mixed solution of TOP / NCs / S in step (3) into the product in step (4), set the reaction temperature to 325°C, react at thi...

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Abstract

The invention discloses an efficient preparation method of a hexagonal CuInS2 / ZnS semiconductor thick nano plate. The preparation method specifically comprises the following steps: (1) dissolving CuInS2 / ZnS nano-cores in tri-n-octylphosphine to obtain a TOP / NCs solution; (2) mixing sulfur powder with TOP in an argon environment, and carrying out ultrasonic treatment to obtain a clear TOP / S solution; (3) mixing the TOP / S solution with the TOP / NCs solution to obtain a mixed solution of tri-n-octylphosphine / nano-core / sulfur powder; (4) enabling tri-n-octylphosphine oxide, zinc oxide and oleic acid to react for 50-60 minutes at the temperature of 120-130 DEG C, and then raising the temperature to 345-350 DEG C to enable reactants to become a clear solution; and (5) injecting a TOP / NCs / S mixedsolution into the product in the step (4), performing reaction at 320-325 DEG C for 20-24 minutes, and performing cooling to room temperature to obtain the hexagonal CuInS2 / ZnS thick nano plate.

Description

technical field [0001] The invention relates to a hexagonal CuInS 2 / ZnS semiconducting thick nano-plate with high-efficiency preparation method, this nano-material has potential application in ultraviolet photoelectric conversion. Background technique [0002] Semiconductor nanocrystals have attracted extensive attention due to their size and shape dependence. Semiconductor nanocrystals have tunable absorption and fluorescence spectra in the visible and infrared spectral ranges, and have potential applications in solar cells, light-emitting diodes, ultraviolet photoelectric conversion, and fluorescent labeling of biomolecules. However, most of the best-studied semiconductor nanomaterials so far (such as cadmium and lead chalcogenides) are highly toxic, which severely limits their application possibilities. CuInS 2 is a potential alternative material, by adjusting the CuInS 2 The size of nanocrystals, their absorption and fluorescence spectra can be tuned in the visible ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00C01G9/08B82Y40/00B82Y30/00
CPCC01G15/006C01G9/08B82Y40/00B82Y30/00C01P2004/82C01P2004/24C01P2004/22
Inventor 黄博张辉朝
Owner HANGZHOU DIANZI UNIV