Packaging structure of igbt chip subunit and manufacturing method thereof

A technology of packaging structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor/solid-state device components, etc.

Active Publication Date: 2021-06-08
ZHUZHOU CRRC TIMES SEMICON CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the above packaging methods, a new packaging method is proposed to protect the chip terminals from electrical breakdown caused by pollution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Packaging structure of igbt chip subunit and manufacturing method thereof
  • Packaging structure of igbt chip subunit and manufacturing method thereof
  • Packaging structure of igbt chip subunit and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The present invention will be further described below in conjunction with accompanying drawing.

[0036] figure 1 and figure 2 It is a schematic structural diagram of the IGBT chip subunit packaging structure 100 provided in this application. like figure 1 and figure 2 As shown, the packaging structure 100 includes an IGBT chip 110, a gate 120 disposed on the IGBT chip, an upper molybdenum sheet 130 and a lower molybdenum sheet 130 electrically connected to the upper surface emitter 111 and the lower surface collector 112 of the IGBT chip 110 respectively. The chip 140 and the encapsulator 150 are coated with silicon rubber 160 on the emitter electrode 111 on the upper surface and along the terminal area 113 of the IGBT chip 110 .

[0037] Through the packaging structure of the IGBT chip subunit provided in this application, the terminal structure of the IGBT chip can be passivated and protected, preventing electrical breakdown caused by contamination of the chip ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present application provides an IGBT chip sub-unit packaging structure and a manufacturing method thereof. The packaging structure includes an IGBT chip, a gate arranged on the IGBT chip, and an electrode connected to the upper surface emitter and the lower surface collector of the IGBT chip respectively. The connected upper molybdenum sheet and lower molybdenum sheet and the encapsulator, wherein the emitter on the upper surface is coated with silicon rubber along the terminal area of ​​the IGBT chip. Through the packaging structure of the present application and its manufacturing method, the terminal structure of the IGBT chip can be protected by passivation, which avoids electrical breakdown caused by contamination of the chip terminal by external factors, and improves the voltage resistance of the chip and the reliability of long-term work. sex.

Description

technical field [0001] The present invention relates to the field of power semiconductor devices, and more specifically, relates to a packaging structure of an IGBT chip subunit and a manufacturing method thereof. Background technique [0002] The power semiconductor device IGBT, that is, the insulated gate bipolar transistor, is a power electronic device combined with a MOS field effect structure and a bipolar transistor. Large and other advantages, it is widely used in rail transit, smart grid and industrial transmission fields. The packaging forms of IGBT modules include the traditional soldering type and the new crimping type, among which the crimping type packaging has the advantages of high power density, double-sided heat dissipation, and high reliability. [0003] The press-fit IGBT module forms an internal interconnection between the IGBT and (or) the anti-parallel FRD chip, the molybdenum sheet, and the upper and lower electrodes through external physical pressure...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/29H01L29/739H01L21/56
CPCH01L21/56H01L23/296H01L29/7393
Inventor 戴小平王亚飞王彦刚窦泽春吴煜东
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap