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Electro-absorption light-emitting chip based on quantum communication application and manufacturing method thereof

An emission chip and quantum communication technology, which is applied in the field of electro-absorption light-emitting chips, can solve the problems that electro-absorption modulation lasers cannot meet the needs of separate control of lasers and modulators, and achieve the effects of broadening applications, simplifying manufacturing processes, and reliable processes

Active Publication Date: 2020-05-08
山东国迅量子芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the shortcomings of the above-mentioned prior art, the present invention provides an electro-absorption light-emitting chip based on quantum communication applications, which can solve the problem that the existing electro-absorption modulation laser design method cannot meet the needs of separate control of lasers and modulators in the field of quantum secure communication technical issues

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  • Electro-absorption light-emitting chip based on quantum communication application and manufacturing method thereof
  • Electro-absorption light-emitting chip based on quantum communication application and manufacturing method thereof
  • Electro-absorption light-emitting chip based on quantum communication application and manufacturing method thereof

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Embodiment 1

[0046] This embodiment discloses a fabrication method of an electro-absorption light-emitting chip based on quantum communication applications.

[0047] In order to illustrate this embodiment more clearly, the implementation process of the electro-absorption light-emitting chip based on quantum communication applications can be specifically described as follows:

[0048] Epitaxial growth of the buffer layer and the multi-quantum well structure on the substrate to form an epitaxial wafer.

[0049]After the dielectric film is deposited on the surface of the multi-quantum well structure, mask photolithography is carried out to etch away the multi-quantum well waveguide and the lower waveguide layer in the area to be epitaxially grown again.

[0050] The epitaxial growth area needs to be the B area again, and the multi-quantum well structure of the B area is epitaxially grown.

[0051] The grating layer is fabricated in area A by holographic exposure method.

[0052] A first ele...

Embodiment 2

[0072] The purpose of this embodiment is to provide an electro-absorption light-emitting chip based on quantum communication applications, including: a laser chip and a modulator chip epitaxially grown on the same substrate, the P pole of the laser chip and the P pole of the modulator chip are covered isolated, the N pole of the laser chip is isolated from the N pole of the modulator chip, so that the laser chip and the modulator chip can be independently regulated by the external voltage.

[0073] In this embodiment, the fabrication process of the electro-absorption light-emitting chip based on the application of quantum communication can refer to the specific fabrication process in Embodiment 1, and no further description is given here.

Embodiment 3

[0075] The purpose of this embodiment is to provide a light-emitting unit, including an electro-absorption light-emitting chip based on quantum communication applications.

[0076] In this embodiment, for the chip to emit light, external power and signals, as well as corresponding structures such as packaging are required, all of which constitute a light emitting unit.

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Abstract

The invention discloses an electric absorption light-emitting chip based on quantum communication application and a manufacturing method thereof. The manufacturing method comprises the following steps: epitaxially growing a multi-quantum well structure on an N-type substrate; after a dielectric film is deposited on the surface of the multi-quantum well structure, performing mask photoetching, andcorroding the multi-quantum well structure to be subjected to epitaxial growth again, wherein the region to be epitaxially grown again is a B region; epitaxially growing a multi-quantum well structureof the B region; manufacturing a grating layer in the area A by adopting a holographic exposure method; performing mask photoetching of an electrical isolation trench, a P-surface electrode of a sputtering laser and a P-surface high-frequency electrode of a modulator between the A-region multi-quantum well structure and the B-region multi-quantum well structure, and performing mask photoetching of the electrical isolation trench, the sputtering laser and an N-surface electrode of the modulator on the substrate at the position corresponding to the electrical isolation trench.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, in particular to an electro-absorption light-emitting chip based on quantum communication applications and a manufacturing method thereof. Background technique [0002] The statements in this section merely provide background information related to the present disclosure and do not necessarily constitute prior art. [0003] For long-distance applications, people can overcome the effect of chirp by using an external modulator. Among various optical modulators, the electroabsorption modulator based on the quantum-confined Stark effect in the semiconductor multiple quantum well structure has significant advantages and broad application prospects, which stems from many characteristics of the device, such as size Small size, compact structure, easy monolithic integration with semiconductor DFB lasers, low operating voltage, low power consumption, simple optical coupling between lasers ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/026H04B10/50H04B10/70
CPCH01S5/026H04B10/503H04B10/70
Inventor 张石宝刘建宏冯斯波刘军
Owner 山东国迅量子芯科技有限公司