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Electro-absorption light-emitting chip based on quantum communication application and its fabrication method

A technology for transmitting chips and quantum communication, applied in the field of electro-absorption light-emitting chips, can solve the problem that electro-absorption modulated lasers cannot meet the needs of separate control of lasers and modulators, etc., and achieve the effects of widening applications, reliable process and low cost.

Active Publication Date: 2021-12-21
山东国迅量子芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the shortcomings of the above-mentioned prior art, the present invention provides an electro-absorption light-emitting chip based on quantum communication applications, which can solve the problem that the existing electro-absorption modulation laser design method cannot meet the needs of separate control of lasers and modulators in the field of quantum secure communication technical issues

Method used

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  • Electro-absorption light-emitting chip based on quantum communication application and its fabrication method
  • Electro-absorption light-emitting chip based on quantum communication application and its fabrication method
  • Electro-absorption light-emitting chip based on quantum communication application and its fabrication method

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Embodiment 1

[0046] This embodiment discloses a fabrication method of an electro-absorption light-emitting chip based on quantum communication applications.

[0047] In order to illustrate this embodiment more clearly, the implementation process of the electro-absorption light-emitting chip based on quantum communication applications can be specifically described as follows:

[0048] The buffer layer and the multi-quantum well structure are epitaxially grown on the substrate to form an epitaxial wafer.

[0049]After the dielectric film is deposited on the surface of the multi-quantum well structure, mask photolithography is carried out to etch away the multi-quantum well waveguide and the lower waveguide layer in the area to be epitaxially grown again.

[0050] The epitaxial growth area needs to be the B area again, and the multi-quantum well structure of the B area is epitaxially grown.

[0051] The grating layer is fabricated in area A by holographic exposure method.

[0052] A first e...

Embodiment 2

[0072] The purpose of this embodiment is to provide an electro-absorption light-emitting chip based on quantum communication applications, including: a laser chip and a modulator chip epitaxially grown on the same substrate, the P pole of the laser chip and the P pole of the modulator chip are covered isolated, the N pole of the laser chip is isolated from the N pole of the modulator chip, so that the laser chip and the modulator chip can be independently regulated by the external voltage.

[0073] In this embodiment, the fabrication process of the electro-absorption light-emitting chip based on the application of quantum communication can refer to the specific fabrication process in Embodiment 1, and no further description is given here.

Embodiment 3

[0075] The purpose of this embodiment is to provide a light-emitting unit, including an electro-absorption light-emitting chip based on quantum communication applications.

[0076] In this embodiment, for the chip to emit light, external power and signals, as well as corresponding structures such as packaging are required, all of which constitute a light emitting unit.

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Abstract

The invention discloses an electro-absorption light-emitting chip based on quantum communication applications and a manufacturing method thereof, comprising: epitaxially growing a multi-quantum well structure on an N-type substrate; and performing mask photolithography after depositing a dielectric film on the surface of the multi-quantum well structure , etch away the multi-quantum well structure in the area that needs to be epitaxially grown again; the area that needs to be epitaxially grown again is area B, and the multi-quantum well structure in area B is epitaxially grown; the grating layer is made in area A by holographic exposure method; Mask photolithographic electrical isolation trenches between quantum well structures, sputter laser P-side electrodes and modulator P-surface high-frequency electrodes, and then mask photolithographic electrical isolation trenches on the substrate at positions corresponding to the electrical isolation trenches. Isolation trenches, N-side electrodes for sputtering lasers and modulators.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, in particular to an electro-absorption light-emitting chip based on quantum communication applications and a manufacturing method thereof. Background technique [0002] The statements in this section merely provide background information related to the present disclosure and do not necessarily constitute prior art. [0003] For long-distance applications, people can overcome the effect of chirp by using an external modulator. Among various optical modulators, the electroabsorption modulator based on the quantum-confined Stark effect in the semiconductor multiple quantum well structure has significant advantages and broad application prospects, which stems from many characteristics of the device, such as size Small size, compact structure, easy monolithic integration with semiconductor DFB lasers, low operating voltage, low power consumption, simple optical coupling between lasers ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/026H04B10/50H04B10/70
CPCH01S5/026H04B10/503H04B10/70
Inventor 张石宝刘建宏冯斯波刘军
Owner 山东国迅量子芯科技有限公司