Diffusion welding method of copper target material and back plate

Abstract

The invention relates to a diffusion welding method of a copper target material and a back plate. The diffusion welding method comprises the following steps that (1), the copper target material, the back plate and a cushion block, wherein the back plate is provided with a groove, and the areas of the copper target material and the cushion block are equal to the bottom area of the groove of the back plate; (2), the copper target material and the cushion block in the step (1) are sequentially put into the groove of the back plate to finish assembly treatment, and then a whole body is put into asheath; (3), the sheath obtained in the step (2) is sealed and then degassed; and (4), hot isostatic pressing welding is carried out on the sheath degassed in the step (3), and then the sheath and thecushion block are removed to finish diffusion welding of the copper target material and the back plate. According to the diffusion welding method, by improving an assembly structure of the copper target material and the back plate, the bonding degree of welding faces of the copper target material and the back plate is guaranteed, abnormal growth of crystal grains is effectively avoided, and particularly the phenomenon that the crystal grains are thick and large at the edge of the copper target material is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and relates to a welding method of a target component, in particular to a diffusion welding method of a copper target and a back plate. Background technique [0002] Sputtering is one of the main technologies for preparing thin film materials. It uses ions generated by ion sources to accelerate and gather in a vacuum to form a high-speed energy ion beam, which bombards the solid surface, and the kinetic energy exchange occurs between the ions and the solid surface atoms. The atoms on the surface of the solid are separated from the solid and deposited on the surface of the substrate. The bombarded solid is the raw material for preparing the sputtering deposition film, which is generally called a sputtering target. [0003] Due to the different strengths of sputtering targets, in the actual application process, it is necessary to combine the sputtering targets that meet the performance requi...

AI Technical Summary

Problems solved by technology

Although the welding method evenly arranges the metal powder to fill the holes caused by the thread extrusion deformation, thereby improving the bonding rate of the high-purity copper target and the back plate, there is still a problem of abnormal grain growth during the welding process. Problems, especially coarse grains tend to appear at the edge of the copper target

[0009] Although the welding methods in the above prior art all adopt the HIP diffusion welding technology, the welding effect is still not good, and pores and weld seams are prone to appear at the edge of the copper target during the welding process, resulting in the presence of grains during the welding process. abnormal growth problem

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