Preparation method of organic crystalline material, organic crystalline material, and light-emitting element

Abstract

The invention relates to the field of organic semiconductors, and particularly discloses a preparation method of an organic crystalline material, the organic crystalline material and a light-emittingelement. The preparation method of the organic crystalline material comprises the following steps: heating and annealing two oppositely stacked metal complex amorphous doped membranes in an inert environment, and then cooling to room temperature, wherein the host material of the metal complex amorphous doped membranes is a complex of a first metal and a first ligand, and the guest material is a complex of a second metal and a second ligand; moreover, the difference between the metal atomic numbers of the first metal and the second metal is greater than or equal to 10, and the first ligand andthe second ligand are the same or have spatially similar structures. According to the preparation method, the high-concentration doped defect-induced organic crystalline material can be obtained, thephotoluminescence spectrum of the prepared organic crystalline material has triplet state direct excitation and emission characteristics, and the organic crystalline material can be applied to a light-emitting element.

Description

technical field [0001] The invention relates to the field of organic semiconductors, in particular to a preparation method of an organic crystal material, an organic crystal material and a light-emitting element. Background technique [0002] The synthesis and optimization of organic semiconductor materials are mainly based on the synthesis of various types of organic molecules, through the optimization of different ligands and groups, to achieve electron injection and transport capabilities at different energy levels. Molecular energy levels can be classified into singlet and triplet properties based on the electron pairing of the outer electron energy levels. The triplet energy level of organic molecules is often considered to be forbidden, and its role in the electronic transition during the luminescence process and the electron transport process of the device is much lower than that of the singlet energy level. [0003] Introducing defects into crystals is a common meth...

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Problems solved by technology

However, this approach has few applications in the field of organic semiconductors

[0004] First, the preparation of organic semiconductor devices is usually dominated by amorphous thin films, and there is no corresponding crystal structure; second, unlike the delocalized energy level structure of inorganic semiconductor materials, the energy level structure of organic semiconductor materials often depends on the molecular localization. domain energy level, it is difficult to control the molecular energy level structure by introducing defects into the crystal structure; In the process of molecular crystal materials prepared by solution growth, the crystal growth is slow, and it is difficult to introduce crystal defects. Even if molecular defects are introduced, the crystal growth will be interrupted quickly, resulting in crystal collapse, and the preparation of defect-induced crystals cannot be achieved.

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