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Magnetic field sensor based on organic field effect transistor and preparation method thereof

A magnetic field sensor and effect tube technology, which is applied in the direction of the size/direction of the magnetic field, semiconductor/solid-state device manufacturing, and magnetic field measurement using electromagnetic devices. It can solve the problems of large size, non-portable application range, and complex structure. Good performance, uniform and controllable size, widening the application range

Inactive Publication Date: 2020-05-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the defects of complex structure, large volume, non-portability and narrow application range of the above-mentioned traditional magnetic field sensor, the present invention provides a magnetic field sensor based on an organic field effect tube and its preparation method

Method used

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  • Magnetic field sensor based on organic field effect transistor and preparation method thereof
  • Magnetic field sensor based on organic field effect transistor and preparation method thereof
  • Magnetic field sensor based on organic field effect transistor and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0039] like Figure 1-2As shown, a magnetic field sensor based on an organic field effect transistor, the magnetic field sensor includes a substrate 1, a gate electrode 2, a dielectric layer 3, an organic semiconductor layer 4, a source electrode 5, a drain electrode 6 and a package from bottom to top. Layer 7, the organic semiconductor layer 4 includes a mixed material of magnetic nanomaterials and organic semiconductor materials, wherein the bottom gate top contact structure, the gate electrode 2, the source electrode 5 and the drain electrode 6 are all silver nanowires, and the dielectric layer 3 is made of polystyrene with a thickness of 500nm, the semiconductor layer 4 is formed by mixing 3-hexylthiophene and iron nanoparticles (0.1 wt%) with a thickness of 50nm, and the shellac encapsulation layer 7 has a thickness of 300nm. A field effect transistor magnetic field sensor with high sensitivity and high stability can be realized by using the structure.

[0040] A method ...

Embodiment 2

[0049] like figure 1 As shown, a magnetic field sensor based on an organic field effect transistor, the magnetic field sensor includes a substrate 1, a gate electrode 2, a dielectric layer 3, an organic semiconductor layer 4, a source electrode 5, a drain electrode 6 and a package from bottom to top. Layer 7, the organic semiconductor layer 4 includes a mixed material of magnetic nanomaterials and organic semiconductor materials, wherein the bottom gate top contact structure, the gate electrode 2, the source electrode 5 and the drain electrode 6 are all gold nanowires, and the dielectric layer 3 is polymethyl methacrylate, the thickness is 300nm, the semiconductor layer 4 is formed by mixing Tips-pentacene and nickel nanoparticles (0.5wt%), the thickness is 70nm, and the shellac encapsulation layer 7 is 200nm in thickness. A field effect transistor magnetic field sensor with high sensitivity and high stability can be realized by using the structure.

[0050] A method for prep...

Embodiment 3

[0058] like figure 1 As shown, a magnetic field sensor based on an organic field effect transistor, the magnetic field sensor includes a substrate 1, a gate electrode 2, a dielectric layer 3, an organic semiconductor layer 4, a source electrode 5, a drain electrode 6 and a package from bottom to top. Layer 7, the organic semiconductor layer 4 includes a mixed material of magnetic nanomaterials and organic semiconductor materials, wherein the bottom gate top contact structure, the gate electrode 2, the source electrode 5 and the drain electrode 6 are all indium nanowires, and the dielectric layer 3 adopts polyvinyl alcohol, the thickness is 300nm, the semiconductor layer 4 is the polyisoprene derivative containing siloxane and cobalt nanoparticle (content is 1wt%) mixed composition, and the thickness is 60nm, and the shellac encapsulation layer 7 thickness is 250nm. A field effect transistor magnetic field sensor with high sensitivity and high stability can be realized by usin...

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Abstract

The invention provides a magnetic field sensor based on an organic field effect transistor and a preparation method thereof, and belongs to the technical field of sensors and preparation thereof. Themagnetic field sensor sequentially comprises a substrate, a gate electrode, a dielectric layer, an organic semiconductor layer, a source electrode, a drain electrode and a packaging layer from bottomto top. The organic semiconductor layer comprises a mixed material of a magnetic nano material and an organic semiconductor material, and the content of the magnetic nano material is 0.1-1wt%. The magnetic field sensor has high sensitivity to magnetic field signals, the manufacturing cost is low, the service life of the magnetic field sensor is prolonged; the preparation of a high-stability deviceis realized, magnetic field transistors with different magnetic field intensities and sensitive response can be manufactured according to requirements, detection of magnetic fields with various intensities can be realized, the application range is broadened, and the magnetic field sensor has huge potential in flexible, miniature, bionic and disposable human body electronic devices, and finally, the prepared magnetic field sensor structure based on the organic field effect transistor has the characteristics of simple structure, miniaturization and portability.

Description

technical field [0001] The invention relates to the technical field of sensors and their preparation, in particular to a magnetic field sensor based on an organic field effect tube and a preparation method thereof. Background technique [0002] The application fields of sensors are very broad. It can be said that from space to the ocean, from various complex engineering systems to people's daily necessities of life, all kinds of sensors are inseparable. Sensing technology plays an increasingly important role in the development of the national economy. Huge effect. The earliest magnetic field sensors have a history of more than 2,000 years, and use the earth's magnetic field to identify directions or guide ships. With the rapid progress of modern science, magnetic field sensing technology is developing in the direction of high responsivity, high resolution, micro-integration and biocompatibility. [0003] Traditional magnetic field sensors are gradually developed along with...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/06H01L51/05H01L51/00H10K99/00
CPCG01R33/066H10K71/12H10K10/466
Inventor 于军胜邵炳尧范惠东庄昕明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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