A flexible pressure sensor based on an organic field effect transistor and its preparation method

A technology of pressure sensor and transistor, which is applied in the direction of measuring fluid pressure, semiconductor/solid-state device manufacturing, and measuring fluid pressure through electromagnetic components, etc., to achieve the effects of simple process, improved stability, and reduced impact

Active Publication Date: 2022-01-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the increase in the cost of materials and manufacturing processes, coupled with people's desire for environmentally friendly electronic materials, it has prompted people to develop low-cost, simple preparation methods, various types, and environmentally friendly organic electronic materials.

Method used

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  • A flexible pressure sensor based on an organic field effect transistor and its preparation method
  • A flexible pressure sensor based on an organic field effect transistor and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] like figure 1 As shown, a flexible pressure sensor based on the organic field effect transistor is a top grid bottom contact structure, and the material and thickness of each layer are: gate electrode 6, source electrode 2 and drain electrodes 3 are silver nanowires, plant dielectric The layer 5 is a rose petal with a thickness of 200 μm, and the biomaterial semiconductor layer 4 is a indigo thickness of 50 nm, and the thickness of the insect encapsulation layer 7 is 300 μm. This structure can be used to achieve high sensitivity, high stability, a field effect transistor pressure sensor.

[0038] A method of preparing a flexible pressure sensor based on an airport effect transistor, comprising the steps of:

[0039] 1 Use the detergent, acetone solution, deionized water, and isopropanol solution to wash the substrate 1, and dry it with nitrogen after cleaning;

[0040] 2 Preparation of silver nanowire source drain electrode 3 on the surface of the substrate 1;

[0041] 3 Th...

Embodiment 2

[0047] like figure 1 As shown, a flexible pressure sensor based on an organic field effect transistor is a top grid bottom contact structure, and the material and thickness of each layer are: gate electrode 6, source electrode 2 and drain electrode 3 are gold nanowires, plant dielectric The layer 5 uses a rose leaf, a thickness of 300 μm, a biomaterial semiconductor layer 4 is carotene, a thickness of 70 nm, and the thickness of the insect package layer 7 is 300 μm. This structure can be used to achieve high sensitivity, high stability, a field effect transistor pressure sensor.

[0048] A method of preparing a flexible pressure sensor based on an airport effect transistor, comprising the steps of:

[0049] 1 Clean the substrate 1 by detergent, acetone solution, deionized water, and isopropyl alcohol solution, and dry it with nitrogen after cleaning;

[0050] 2 Preparation of the gold nanowire source drain electrode 3 on the surface of the substrate 1;

[0051] 3 The biological ma...

Embodiment 3

[0058] like figure 1 As shown, a flexible pressure sensor based on an organic field effect transistor is a top grid bottom contact structure, and the material and thickness of each layer are: gate electrode 6, source electrode 2 and drain electrode 3 are indium nanowires, plant dielectric The layer 5 is a lotus flower petal with a thickness of 250 μm, and the biological material semiconductor layer 4 is indigo, the thickness is 60 nm, and the thickness of the insect rubber package is 400 μm. This structure can be used to achieve high sensitivity, high stability, a field effect transistor pressure sensor.

[0059] A method of preparing a flexible pressure sensor based on an airport effect transistor, comprising the steps of:

[0060] 1 Clean the substrate 1 by detergent, acetone solution, deionized water, and isopropyl alcohol solution, and dry it with nitrogen after cleaning;

[0061] 2 An indium nanowire source drain electrode 3 is prepared on the surface of the substrate 1;

[0...

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Abstract

The invention discloses a flexible pressure sensor based on an organic field effect transistor and a preparation method thereof. The flexible pressure sensor has a top-gate-bottom contact structure, and the flexible pressure sensor consists of a substrate, a biological material semiconductor, and the like from bottom to top. layer, a plant dielectric layer, a gate electrode, and an encapsulation layer, and a source electrode and a drain electrode are respectively arranged in the biomaterial semiconductor layer and on the upper surface of the substrate, and the biomaterial semiconductor layer is composed of a biosemiconductor material, and the plant dielectric layer is made of plant leaf or petal biological material. The invention effectively eliminates the use of toxic reagents, and at the same time, the existence of the elastic three-dimensional cell wall network structure makes it easier to sense external pressure, improves the pressure sensing response of the organic field effect tube, and realizes high-sensitivity and high-response detection and stability of the device for pressure sex.

Description

Technical field [0001] The present invention belongs to the field of sensor preparation, and there is an air field effect tube pressure sensor based on a plant dielectric layer and a biomaterial semiconductor layer, which is disclosed. Background technique [0002] The sensor's application field is very broad, you can say that from space to the ocean, from a variety of complex engineering systems to people's daily live food and clothing, all inseparable from various sensors, sensor technology has increasingly played Great role. Among them, the pressure sensor is widely used in water conservancy, astronomy, meteorological, chemical, and health care industries due to their detectable pressure, acceleration, height, flow rate, pressure, and the like. The airport effect transistor pressure sensor improves selectivity due to high-sensitivity, room temperature, easy integration, and independent multi-parameters, and the organic material itself is light, cheaper. Flexible, simple prepar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/00G01L9/00H01L51/05
CPCG01L1/005G01L9/00H10K10/464
Inventor 于军胜侯思辉张晓华邵炳尧
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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