A flexible pressure sensor based on an organic field effect transistor and its preparation method
A technology of pressure sensor and transistor, which is applied in the direction of measuring fluid pressure, semiconductor/solid-state device manufacturing, and measuring fluid pressure through electromagnetic components, etc., to achieve the effects of simple process, improved stability, and reduced impact
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0037] like figure 1 As shown, a flexible pressure sensor based on the organic field effect transistor is a top grid bottom contact structure, and the material and thickness of each layer are: gate electrode 6, source electrode 2 and drain electrodes 3 are silver nanowires, plant dielectric The layer 5 is a rose petal with a thickness of 200 μm, and the biomaterial semiconductor layer 4 is a indigo thickness of 50 nm, and the thickness of the insect encapsulation layer 7 is 300 μm. This structure can be used to achieve high sensitivity, high stability, a field effect transistor pressure sensor.
[0038] A method of preparing a flexible pressure sensor based on an airport effect transistor, comprising the steps of:
[0039] 1 Use the detergent, acetone solution, deionized water, and isopropanol solution to wash the substrate 1, and dry it with nitrogen after cleaning;
[0040] 2 Preparation of silver nanowire source drain electrode 3 on the surface of the substrate 1;
[0041] 3 Th...
Embodiment 2
[0047] like figure 1 As shown, a flexible pressure sensor based on an organic field effect transistor is a top grid bottom contact structure, and the material and thickness of each layer are: gate electrode 6, source electrode 2 and drain electrode 3 are gold nanowires, plant dielectric The layer 5 uses a rose leaf, a thickness of 300 μm, a biomaterial semiconductor layer 4 is carotene, a thickness of 70 nm, and the thickness of the insect package layer 7 is 300 μm. This structure can be used to achieve high sensitivity, high stability, a field effect transistor pressure sensor.
[0048] A method of preparing a flexible pressure sensor based on an airport effect transistor, comprising the steps of:
[0049] 1 Clean the substrate 1 by detergent, acetone solution, deionized water, and isopropyl alcohol solution, and dry it with nitrogen after cleaning;
[0050] 2 Preparation of the gold nanowire source drain electrode 3 on the surface of the substrate 1;
[0051] 3 The biological ma...
Embodiment 3
[0058] like figure 1 As shown, a flexible pressure sensor based on an organic field effect transistor is a top grid bottom contact structure, and the material and thickness of each layer are: gate electrode 6, source electrode 2 and drain electrode 3 are indium nanowires, plant dielectric The layer 5 is a lotus flower petal with a thickness of 250 μm, and the biological material semiconductor layer 4 is indigo, the thickness is 60 nm, and the thickness of the insect rubber package is 400 μm. This structure can be used to achieve high sensitivity, high stability, a field effect transistor pressure sensor.
[0059] A method of preparing a flexible pressure sensor based on an airport effect transistor, comprising the steps of:
[0060] 1 Clean the substrate 1 by detergent, acetone solution, deionized water, and isopropyl alcohol solution, and dry it with nitrogen after cleaning;
[0061] 2 An indium nanowire source drain electrode 3 is prepared on the surface of the substrate 1;
[0...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com