An infrared detector based on an organic field effect tube and its preparation method

An infrared detector and organic field technology, which is applied in the fields of organic semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., to achieve the effect of improving detection performance, improving response, and simple extraction process

Active Publication Date: 2020-11-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problem in the prior art that the dielectric layer of the organic field effect transistor prepared by solution needs to be used in large quantities, and most of them use a large amount of toxic reagents such as chlorobenzene, toluene, chloroform and anisole, the present invention provides an organic field effect transistor based on The infrared detector and its preparation method aim to provide a field-effect transistor infrared detector with low production cost, environmental protection, high sensitivity, high stability and long service life

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  • An infrared detector based on an organic field effect tube and its preparation method
  • An infrared detector based on an organic field effect tube and its preparation method

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Embodiment 1

[0041] Such as figure 1 The bottom-gate top-contact structure is shown, and the material and thickness of each layer are as follows: the gate electrode, source electrode and drain electrode are all silver nanowires; the dielectric layer is made of silk fibroin with a thickness of 200nm; the organic semiconductor layer is made of carbon nanowires. The pipe is formed by mixing bamboo fibers (bamboo fiber mass fraction is 10%), and the thickness is 50nm; the shellac encapsulation layer has a thickness of 300nm. A field effect transistor infrared detector with high sensitivity and high stability can be realized by using the structure.

[0042] The preparation method of the present embodiment is as follows:

[0043] ① Clean the substrate with detergent, acetone solution, deionized water and isopropanol solution, and dry it with nitrogen after cleaning;

[0044] ② Prepare a 30nm thick silver nano wire grid electrode on the surface of the substrate;

[0045] ③The silk fibroin solu...

Embodiment 2

[0050] Such as figure 1 The bottom-gate top-contact structure is shown, and the material and thickness of each layer are as follows: the gate electrode, source electrode and drain electrode are all gold nanowires; the dielectric layer is made of silk fibroin with a thickness of 500nm; the organic semiconductor layer is 3- Hexylthiophene is mixed with bamboo fiber (the mass fraction of bamboo fiber is 5%), and the thickness is 30nm; the shellac encapsulation layer has a thickness of 200nm. A field effect transistor infrared detector with high sensitivity and high stability can be realized by using the structure.

[0051] The preparation method of the present embodiment is as follows:

[0052] ① Clean the substrate with detergent, acetone solution, deionized water and isopropanol solution, and dry it with nitrogen after cleaning;

[0053] ② Prepare a 30nm thick gold nano wire grid electrode on the surface of the substrate;

[0054] ③The silk fibroin solution with a concentrat...

Embodiment 3

[0059] Such as figure 1 The bottom-gate top-contact structure is shown, and the material and thickness of each layer are as follows: the gate electrode, source electrode and drain electrode are all iron nanowires; the dielectric layer is silk fibroin with a thickness of 600nm; the organic semiconductor layer is 6, 13-bis(triisopropylsilylethynyl) pentacene is mixed with bamboo fiber (the mass fraction of bamboo fiber is 8%), the thickness is 40nm, and the shellac encapsulation layer has a thickness of 200nm. A field effect transistor infrared detector with high sensitivity and high stability can be realized by using the structure.

[0060] The preparation method of the present embodiment is as follows:

[0061] ① Clean the substrate with detergent, acetone solution, deionized water and isopropanol solution, and dry it with nitrogen after cleaning;

[0062] ② Prepare a 30nm thick iron nano wire grid electrode on the surface of the substrate;

[0063] ③The silk fibroin soluti...

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Abstract

The invention discloses an infrared detector based on an organic field effect transistor and a preparation method thereof. The field effect transistor is sequentially composed of a substrate, a gate electrode, a dielectric layer, a semiconductor layer, a source electrode and a drain electrode, and a packaging layer from bottom to top. The dielectric layer is highly oriented silk fibroin biological material, and the semiconductor layer is a mixed material of bamboo fiber and semiconductor material. The invention utilizes highly oriented silk fibroin to effectively reduce the leakage current of the detector and the dielectric properties of the dielectric layer, thus effectively improving the detection rate and reducing the driving voltage of the detector; using bamboo fiber The use of toxic reagents is effectively eliminated, and at the same time, due to its infrared light absorption, the infrared response of the detector is improved, and the device is highly sensitive and responsive to infrared detection. The infrared detector uses silk fibroin and bamboo fiber, which is biologically environmentally friendly and lower in cost. It broadens the application range of infrared detectors and is suitable for flexible, wearable devices and disposable bioelectronics.

Description

technical field [0001] The invention belongs to the technical field of detector preparation, and in particular relates to an organic field effect tube infrared detector based on a biological dielectric layer and a biological material-doped organic semiconductor layer and a preparation method thereof. Background technique [0002] The application fields of detectors are very broad. It can be said that from space to oceans, from various complex engineering systems to people's daily necessities of life, all kinds of detectors are inseparable. Among them, photodetectors are widely used in water conservancy, astronomy, meteorology, chemical industry, and medical and health industries because they can detect infrared rays, ultraviolet rays, and visible light. Organic photodetectors belong to photoelectric conversion devices, which are detectors made of materials with photoelectric effect that can realize photoelectric conversion. Compared with traditional resistive devices, organ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/113H10K85/141H10K85/20H10K30/65H10K30/354H10K2102/00H10K2102/101H10K2102/102Y02E10/549
Inventor 于军胜庄昕明侯思辉邵炳尧
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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