Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A pressure sensor based on organic field effect tube and its preparation method

A technology of pressure sensor and effect tube, which is applied in the field of pressure sensor based on organic field effect tube and its preparation, can solve problems such as environmental pollution and complex manufacturing process, achieve excellent adsorption performance, improve adhesion, and improve the effect of pressure sensing response

Active Publication Date: 2020-05-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the current organic field effect tube pressure sensor is complicated in manufacturing process and the materials used cause pollution to the environment, and to provide an organic field effect tube pressure sensor using a bio-mixed material dielectric layer and a bio-material doped semiconductor layer. Sensor and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A pressure sensor based on organic field effect tube and its preparation method
  • A pressure sensor based on organic field effect tube and its preparation method
  • A pressure sensor based on organic field effect tube and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0040] A preparation method based on an organic field effect tube pressure sensor, comprising the steps of:

[0041] Step 1. Clean the substrate with detergent, acetone solution, deionized water and isopropanol solution, and dry it with nitrogen after cleaning;

[0042]Step 2, by a method in vacuum thermal evaporation, magnetron sputtering, plasma-enhanced chemical vapor deposition, screen printing, printing and spin coating, metal nanowire grid electrodes, metal nanowires are prepared on the substrate surface For iron nanowires, copper nanowires, silver nanowires, gold nanowires, aluminum nanowires, nickel nanowires, cobalt nanowires, manganese nanowires, cadmium nanowires, indium nanowires, tin nanowires, tungsten nanowires and platinum one of the nanowires;

[0043] Step 3, ultrasonically mix bamboo cellulose and biodielectric material in proportion, and pass the mixed bamboo cellulose and biodielectric material solution through one of spin coating, roller coating, drop fi...

Embodiment 1

[0049] A pressure sensor based on an organic field effect tube, such as figure 1 The bottom-gate-top-contact structure is shown. The material and thickness of each layer are as follows: the gate electrode, source electrode and drain electrode are all silver nanowires, and the dielectric layer is made of a mixed material of bamboo cellulose and gelatin, with a thickness of 200nm. Bamboo cellulose accounts for 60%, the semiconductor layer is formed by mixing indigo and bamboo fiber (10%), the thickness is 50nm, and the shellac encapsulation layer has a thickness of 300nm. A field-effect transistor pressure sensor with high sensitivity and high stability can be realized with this structure, and its preparation method is as follows:

[0050] 1. Clean the substrate with detergent, acetone solution, deionized water and isopropanol solution, and dry it with nitrogen after cleaning;

[0051] 2. Preparation of silver nanowire grid electrodes on the surface of the substrate;

[0052] ...

Embodiment 2

[0057] Such as figure 1 The bottom gate top contact structure is shown, the material and thickness of each layer are: the gate electrode, source electrode and drain electrode are all gold nanowires, the dielectric layer is made of a mixed material of bamboo cellulose and silk protein, and the thickness is 500nm. Wherein the bamboo cellulose accounts for 70%, the semiconductor layer is composed of carotene and bamboo fiber (50% in content), the thickness is 70nm, and the thickness of the shellac encapsulation layer is 200nm. A field-effect transistor pressure sensor with high sensitivity and high stability can be realized with this structure, and its preparation method is as follows:

[0058] 1. Clean the substrate with detergent, acetone solution, deionized water and isopropanol solution, and dry it with nitrogen after cleaning;

[0059] 2. Preparation of gold nanowire grid electrodes on the surface of the substrate;

[0060] 3. Ultrasonic mixing of bamboo cellulose and silk...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a pressure sensor based on an organic field effect tube and a preparation method thereof, comprising a substrate located at the bottom layer, a grid electrode is arranged on the surface of the substrate, a dielectric layer is arranged on the substrate and the grid electrode, and a dielectric layer is arranged on the dielectric layer A semiconductor layer is provided, and a source electrode and a drain electrode are respectively provided on the semiconductor layer, and an encapsulation layer is provided on the substrate to wrap the gate electrode, the dielectric layer, the semiconductor layer, the source electrode and the drain electrode, wherein the dielectric layer is The mixed material of bamboo cellulose and biological dielectric material has a bamboo cellulose content of 50%-75%. Bamboo cellulose in the sensor of the present invention can detect pressure with high sensitivity and high response. The dielectric layer and organic semiconductor layer doped with bamboo cellulose make the device more stable and more environmentally friendly. The preparation method is easy to implement and can be best compatible with biological Material functional layer, and reduce environmental pollution during the preparation process.

Description

technical field [0001] The invention belongs to the technical field of pressure sensors, and in particular relates to a pressure sensor based on an organic field effect tube and a preparation method thereof. Background technique [0002] The application fields of sensors are very broad. It can be said that from space to the ocean, from various complex engineering systems to people's daily necessities of life, all kinds of sensors are inseparable. Sensing technology plays an increasingly important role in the development of the national economy. Huge effect. Among them, pressure sensors are widely used in water conservancy, astronomy, meteorology, chemical industry, and medical and health industries because they can detect pressure, acceleration, height, flow rate, pressure, etc. Compared with traditional resistive devices, organic field-effect transistor pressure sensors have the advantages of high sensitivity, room temperature operation, easy integration, and independent m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/14G01L1/16H01L41/113H01L41/22H01L51/05H10N30/01H10N30/30
CPCG01L1/14G01L1/16H10N30/302H10N30/01H10K10/00
Inventor 于军胜庄昕明张大勇侯思辉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products