Gallium oxide semiconductor structure, vertical gallium oxide-based power device and preparation method
A technology of power devices and gallium oxide, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve lattice mismatch, cannot grow gallium oxide thin films, and is difficult to prepare vertical gallium oxide-based high-power devices, etc. question
Active Publication Date: 2020-10-20
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology
However, due to the lattice mismatch between gallium oxide and silicon, silicon carbide and other semiconductor materials with high thermal conductivity and high doping, it is impossible to grow good gallium oxide films by epitaxy, making it difficult to prepare vertical oxide films. Gallium-Based High Power Devices
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[0054] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0055] see Figure 1 to Figure 9 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...
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Abstract
The present invention provides a gallium oxide semiconductor structure, a vertical gallium oxide-based power device and a preparation method. By bonding and thinning, an unintentionally doped gallium oxide layer is transferred to a highly doped, highly thermally conductive heterogeneous substrate In the above, through the surface treatment and ion implantation of the gallium oxide layer, a heavily doped gallium oxide layer can be obtained, and a gallium oxide semiconductor structure including a heterogeneous substrate, a gallium oxide layer and a heavily doped gallium oxide layer is prepared in sequence; In the vertical gallium oxide-based power device prepared by the gallium semiconductor structure, since the intermediate layer is a thicker gallium oxide layer, and compared with the heavily doped gallium oxide layer, the carrier concentration is lower, which increases the breakdown of the device in design. The high thermal conductivity of the heterogeneous substrate can improve the heat dissipation capability of the device, and the multi-Fin structure of the device can provide large current, which is of great significance for the development of vertical gallium oxide-based high-power devices in the future.
Description
technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a gallium oxide semiconductor structure, a vertical gallium oxide-based power device and a preparation method. Background technique [0002] Gallium oxide (Ga 2 o 3 ) is an ultra-wide band gap semiconductor material with a band gap (4.5eV~4.9eV). Compared with gallium nitride (GaN) and silicon carbide (SiC), its band gap is larger and the breakdown field strength At the same time, due to the simple preparation method, the production cost can be lowered, which has attracted great attention from the scientific research community and the industrial circle in terms of ultra-high withstand voltage power electronic devices. [0003] Gallium oxide-based high-voltage, high-power devices have great application prospects in key civilian and military fields such as new energy electric vehicles, ultra-high voltage power transmission, high-speed railways, and electromagnetic rail gu...
Claims
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IPC IPC(8): H01L21/34H01L29/78H01L29/06
CPCH01L29/66969H01L29/7827H01L29/7831H01L29/0615H01L29/24H01L29/7828H01L29/66666H01L29/4236H01L21/02002H01L21/465H01L21/467H01L29/1608H01L29/267
Inventor 欧欣徐文慧游天桂沈正皓
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI