Preparation method of metal film and metal film structure

Abstract

The invention discloses a preparation method of a metal film and a metal film structure. The preparation method of the metal film comprises the following steps of forming an adhesion layer on a wafer,wherein the wafer is arranged in a chamber; and introducing a first precursor and a second precursor into the chamber in order to form the metal film on the surface of the adhesion layer, wherein thesurface of the adhesion layer is pretreated before the first precursor and the second precursor are introduced, so that the component uniformity of the surface is improved, and thus the reflectivityof the metal film is adjusted. According to the preparation method of the metal film, the surface of the adhesion layer is pretreated, so that the reflectivity of the metal film is controllable, the uniformity and consistency of the reflectivity of the metal film can be improved, and the industrial mass production of the metal films is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, to a method for preparing a metal thin film and the metal thin film. Background technique [0002] With the development of semiconductor manufacturing technology, metals are widely used in semiconductor devices. Taking metal tungsten as an example, it has excellent characteristics such as low resistance, high hardness, and high melting point, and tungsten has good properties when filling trenches with high aspect ratios. Conformal and can adequately fill narrow trenches. [0003] In the preparation method of the metal thin film, a titanium nitride film (TiN film) is usually used as the adhesion layer, and a chemical vapor deposition (Chemical Vapor Deposition, CVD) deposition process is used to form the metal thin film on the adhesion layer. During the chemical vapor deposition process, multiple parameters in the process need to be monitored in real tim...

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Problems solved by technology

[0004] However, for the traditional method of preparing metal thin films, the reflectance of the prepared metal thin films often has great instability, such as figure 1 As shown, when a metal thin film sample with a thickness of 480nm was formed, one abnormal sample appeared in ten samples, which had high reflectivity and high surface flatness compared with the normal sample

In addition, in some other metal thin film samples not shown, there may also be some abnormal samples whose reflectance is lower than that of normal samples

For some abnormal samples in the above two cases, their surface flatness is better / worse than normal samples, and the difference between the surface flatness of normal samples is too large, and for the semiconductor batch manufacturing process, it requires each product. The quality is similar, therefore, there is instability in the traditional method of preparing metal thin films

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