A kind of polysilicon etchant additive and application thereof
A technology of etching solution and additives, which is applied in the field of photovoltaic material preparation, can solve the problems of reducing production costs, upgrading, and high cost of silicon materials, and achieves the effects of uniformly etching holes, slowing down the reaction rate, and improving wettability
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Embodiment 1
[0024] Mix 5g of ethylene glycol monobutyl ether, 15g of glucose, 10g of sodium lactate, 2g of vitamin C, 10g of polyethylene glycol, 1g of sodium fluorosilicate and 867g of water, control 120°C, reflux and react for 8h to obtain etching solution additives;
[0025] Measure 100L of 40% by mass hydrofluoric acid, 500L of 50% by mass nitric acid, and 200L of water, mix and stir evenly to obtain a basic liquid;
[0026] Weigh 15 g of etching solution additives and 1000 g of base solution, control the temperature to 6° C., mix them evenly, put in polycrystalline silicon wafers, and react for 90 seconds to obtain etched silicon wafers.
Embodiment 2
[0028] Mix 20g of ethylene glycol monobutyl ether, 30g of glucose, 15g of sodium lactate, 6g of vitamin C, 40g of polyethylene glycol, 8g of sodium fluorosilicate and 746g of water, control at 130°C, reflux and react for 12h to obtain etching solution additives;
[0029] Measure 100L of 40% mass concentration of hydrofluoric acid, 600L of 50% mass concentration of nitric acid and 300L of water, mix and stir them evenly to obtain a basic liquid;
[0030] Weigh 50 g of etching solution additives and 1000 g of base solution, control the temperature to 9° C., mix them evenly, put in polycrystalline silicon wafers, and react for 105 seconds to obtain etched silicon wafers.
Embodiment 3
[0032] Mix 10g of ethylene glycol monobutyl ether, 20g of glucose, 13g of sodium lactate, 4g of vitamin C, 30g of polyethylene glycol, 5g of sodium fluorosilicate and 801g of water, control 125°C, reflux for 10h, and obtain etching solution additives;
[0033] Measure 100L of 40% mass concentration of hydrofluoric acid, 700L of 50% mass concentration of nitric acid and 400L of water, mix and stir them evenly to obtain a basic liquid;
[0034] Weigh 30 g of etching solution additives and 1000 g of base solution, control the temperature to 7° C., mix them evenly, put in polycrystalline silicon wafers, and react for 120 seconds to obtain the etched silicon wafers.
[0035] The polysilicon etching solution additive of the present invention is applied to wire-cut polysilicon wafer texturing, and the texturing effect obtained is as follows:
[0036] Grouping No additive etching Example 1 Example 2 Example 3 Reflectivity / %24.4719.2419.3319.27 Open circuit voltage / V0.64890.66420.66030.66...
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