A kind of polysilicon etchant additive and application thereof

A technology of etching solution and additives, which is applied in the field of photovoltaic material preparation, can solve the problems of reducing production costs, upgrading, and high cost of silicon materials, and achieves the effects of uniformly etching holes, slowing down the reaction rate, and improving wettability

Active Publication Date: 2020-08-21
武汉风帆电化科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The rod drawing process of monocrystalline silicon is complicated, and the cost of silicon material is high; while the ingot casting process of polycrystalline silicon is simple, and the utilization rate of square ingot silicon material is high, which can significantly reduce production costs. At present, more than 98% of the silicon materials in the international market Photovoltaic cells are polycrystalline silicon solar cells
[0003] However, the anti-reflection effect of the textured surface of monocrystalline silicon is significantly better than that of polycrystalline silicon. Monocrystalline silicon with uniform crystal phase distribution can obtain a uniformly distributed and dense pyramid microstructure through anisotropic alkali etching, which can achieve an average reflectance of less than 10%; while polycrystalline silicon There are grain boundaries inside, and the average reflectance of the suede surface made by acid etching method is above 20%, which affects the improvement of the overall efficiency of the battery

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Mix 5g of ethylene glycol monobutyl ether, 15g of glucose, 10g of sodium lactate, 2g of vitamin C, 10g of polyethylene glycol, 1g of sodium fluorosilicate and 867g of water, control 120°C, reflux and react for 8h to obtain etching solution additives;

[0025] Measure 100L of 40% by mass hydrofluoric acid, 500L of 50% by mass nitric acid, and 200L of water, mix and stir evenly to obtain a basic liquid;

[0026] Weigh 15 g of etching solution additives and 1000 g of base solution, control the temperature to 6° C., mix them evenly, put in polycrystalline silicon wafers, and react for 90 seconds to obtain etched silicon wafers.

Embodiment 2

[0028] Mix 20g of ethylene glycol monobutyl ether, 30g of glucose, 15g of sodium lactate, 6g of vitamin C, 40g of polyethylene glycol, 8g of sodium fluorosilicate and 746g of water, control at 130°C, reflux and react for 12h to obtain etching solution additives;

[0029] Measure 100L of 40% mass concentration of hydrofluoric acid, 600L of 50% mass concentration of nitric acid and 300L of water, mix and stir them evenly to obtain a basic liquid;

[0030] Weigh 50 g of etching solution additives and 1000 g of base solution, control the temperature to 9° C., mix them evenly, put in polycrystalline silicon wafers, and react for 105 seconds to obtain etched silicon wafers.

Embodiment 3

[0032] Mix 10g of ethylene glycol monobutyl ether, 20g of glucose, 13g of sodium lactate, 4g of vitamin C, 30g of polyethylene glycol, 5g of sodium fluorosilicate and 801g of water, control 125°C, reflux for 10h, and obtain etching solution additives;

[0033] Measure 100L of 40% mass concentration of hydrofluoric acid, 700L of 50% mass concentration of nitric acid and 400L of water, mix and stir them evenly to obtain a basic liquid;

[0034] Weigh 30 g of etching solution additives and 1000 g of base solution, control the temperature to 7° C., mix them evenly, put in polycrystalline silicon wafers, and react for 120 seconds to obtain the etched silicon wafers.

[0035] The polysilicon etching solution additive of the present invention is applied to wire-cut polysilicon wafer texturing, and the texturing effect obtained is as follows:

[0036] Grouping No additive etching Example 1 Example 2 Example 3 Reflectivity / %24.4719.2419.3319.27 Open circuit voltage / V0.64890.66420.66030.66...

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PUM

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Abstract

The invention provides a polycrystalline silicon etchant additive and an application thereof. The additive is prepared from ethylene glycol monobutyl ether, glucose, sodium lactate, vitamin C, polyethylene glycol, sodium fluorosilicate and water. The raw materials are mixed and subjected to refluxing at 120-130 DEG C for about 10 hours to obtain the additive, the additive is mixed with a base acidsolution to obtain the etchant solution. When the etchant solution is used for texturing etching of the surface of the polycrystalline silicon wafer, the generated hydrogen bubble is very small, andcan leave the interface of the silicon wafer quickly, so that the etching of the surface of the silicon wafer can be more uniform, and the thinning amount of the polycrystalline silicon wafer can be controlled within a smaller range.

Description

Technical field [0001] The invention relates to the technical field of photovoltaic material preparation, in particular to a polysilicon etching solution additive and its application. Background technique [0002] The key to large-scale utilization of solar power generation is to prepare low-cost, high-efficiency solar cells. The drawing process of monocrystalline silicon is complicated, and the cost of silicon material is relatively high; while the ingot casting process of polycrystalline silicon is simple, and the utilization rate of square ingot silicon material is high, which can significantly reduce production costs. At present, more than 98% of the silicon in the international market All photovoltaic cells are polycrystalline silicon solar cells. [0003] However, the anti-reflective effect of monocrystalline silicon texture is obviously better than that of polycrystalline silicon. Monocrystalline silicon with uniform crystal phase distribution can obtain a uniformly dense p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10H01L21/306
CPCC30B33/10H01L21/30604
Inventor 张红利王池凡宝安罗江李锋清袁震芹
Owner 武汉风帆电化科技股份有限公司
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