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Method for growing large-area single crystal 3R-MoS2 film by using molten salt electrolysis method

A 3r-mos2, molten salt electrolysis technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve problems such as small resistivity change

Active Publication Date: 2020-06-12
EAST CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention is to solve the 3R-MoS prepared by the existing method 2 The technical problem of small resistivity change during the phase transition of the film is to provide a method for growing large-area single crystal 3R-MoS by molten salt electrolysis 2 thin film method

Method used

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  • Method for growing large-area single crystal 3R-MoS2 film by using molten salt electrolysis method
  • Method for growing large-area single crystal 3R-MoS2 film by using molten salt electrolysis method
  • Method for growing large-area single crystal 3R-MoS2 film by using molten salt electrolysis method

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specific Embodiment approach 1

[0022] Specific implementation mode 1: In this implementation mode, large-area single crystal 3R-MoS is grown by molten salt electrolysis 2 Thin film method, proceed as follows:

[0023] 1. According to the mass ratio of KCl, NaCl, sulfur salts and molybdenum salts (26-29): (37-40): (6-5): (4-3) KCl, NaCl, sulfur salts and Molybdenum salt is added to the electrolytic cell of the electrolytic furnace, heated and melted to obtain an electrolyte system of KCl-NaCl-sulfur salt-molybdenum salt;

[0024] 2. Grind the substrate with 500-2000 mesh sandpaper and then polish it, and then use acetone and absolute ethanol to clean it ultrasonically to ensure that the surface of the substrate is clean and free of grease and pollutants; after drying, place the growth side of the substrate upward into the electrolytic tank;

[0025] 3. Using metal molybdenum wire as the working electrode and auxiliary electrode, the electrolysis temperature is 657-850°C and the current is 0.5-1.0Acm -2 Un...

specific Embodiment approach 2

[0026] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the sulfur salt described in step 1 is KSCN or K 2 S. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0027] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that the molybdenum salt described in step one is Na 2 MoO 4 or MoO 3 . Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a method for growing a large-area single crystal 3R-MoS2 thin film by using a molten salt electrolysis method, and relates to a preparation method of the large-area single crystal 3R-MoS2 thin film. The invention aims to solve the technical problem of small resistivity change during phase change of the 3R-MoS2 film prepared by the existing method. The method comprises the following steps: 1, preparing an electrolyte system from KCl, NaCl, sulfur salt and molybdenum salt; 2, grinding, polishing and cleaning the substrate, and putting the substrate into an electrolytic cell; and 3, carrying out electrolysis by taking a metal molybdenum wire as a working electrode and an auxiliary electrode, and then washing and drying the substrate to obtain the single crystal 3R-MoS2film on the surface of the substrate. According to the method, the film forming rate reaches up to 100%, the resistivity change amplitude of the film in the insulator-metal phase change process reaches four or more orders of magnitudes, and the method can be applied to the fields of photoelectricity, infrared and gas sensing.

Description

technical field [0001] The invention relates to large area single crystal 3R-MoS 2 The method of film preparation. Background technique [0002] In recent years, 3R-MoS 2 Due to the symmetry defects of any number of layers, it has attracted widespread attention. Its nonlinear optical properties are applied in the fields of laser technology, spectroscopy and material structure analysis. Therefore, 3R-MoS 2 The film is vividly called "smart film". [0003] Existing 3R-MoS 2 The preparation methods of thin film materials mainly include vacuum evaporation, sputtering, chemical vapor deposition, physical vapor deposition and pulsed laser deposition. These preparation methods are relatively mature, and the area of ​​the film can be grown large, and the thickness of the film is controllable. However, these films are all polycrystalline films, and the resistivity change can only reach 2 to 3 orders of magnitude when the phase transition occurs. Optical performance is affected. ...

Claims

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Application Information

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IPC IPC(8): C30B9/14C30B29/46
CPCC30B9/14C30B29/46
Inventor 柳玉辉刘云海张爽王英财曹小红张志宾戴荧王有群
Owner EAST CHINA UNIV OF TECH
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