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Preparation method of ZnIn2S4 nanosheet array rich in surface S vacancies

A nanosheet array and nanoarray technology, which is applied in the field of semiconductor photocatalytic material preparation, can solve the problems of difficult photogenerated carrier transport, low photoelectric catalytic performance, and low photoelectric performance, and achieve good photocatalytic potential and superior performance , the effect of reducing the preparation time

Inactive Publication Date: 2020-06-19
CHINA UNIV OF MINING & TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a ZnIn rich in surface S vacancies 2 S 4 The preparation method of nanosheet array solves the problems of poor photoabsorption performance, low photoelectric performance, difficulty in transporting photogenerated carriers, and low photocatalytic performance of photocatalytic materials in the field of photoelectrocatalysis

Method used

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  • Preparation method of ZnIn2S4 nanosheet array rich in surface S vacancies
  • Preparation method of ZnIn2S4 nanosheet array rich in surface S vacancies
  • Preparation method of ZnIn2S4 nanosheet array rich in surface S vacancies

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Embodiment approach

[0036] Surface-rich ZnIn with S vacancies 2 S 4 The preparation method of the nano-array is: the preparation method of the photocatalytic material, first prepare ZnIn 2 S 4 Nanosheet array, ZnIn 2 S 4 The nanosheet array grows vertically on the substrate, the thickness of the nanosheet is 30-50nm, and has a large specific surface area; then a large number of S vacancies are introduced on the surface by plasma cleaning to improve its photocatalytic performance, and the plasma cleaning power is adjusted to Realize the introduction of different amounts of S vacancies, a large number of S vacancies introduced in ZnIn 2 S 4 A local energy level is formed on the lower side of the conduction band, and a surface-rich ZnIn with S vacancies is prepared. 2 S 4 Nano-array electrode sheet, reducing the bandgap width and improving ZnIn 2 S 4 Light absorption properties of nanoarray electrode sheets. The experiment will be described in further detail in conjunction with the accompa...

Embodiment 1

[0050] Example 1: Preparation of 40W cleaning to obtain ZnIn with S vacancies on the surface 2 S 4 Nanoarray electrode sheet.

[0051] will grow with ZnIn 2 S 4 The nano-array FTO was placed in a plasma cleaning machine, vacuumed to 5.0Pa, Ar gas was introduced, and the voltage of the poles in the cleaning chamber was adjusted to 120V. Adjust the vacuum pump to keep the cleaning power at 40W, and clean for 30min. Cooling to get 40W cleaned ZnIn with S vacancies on the surface 2 S 4 Nanoarray electrode sheet.

Embodiment 2

[0052] Example 2: Preparation of 60W cleaning to obtain ZnIn with S vacancies on the surface 2 S 4 Nanoarray electrode sheet.

[0053] will grow with ZnIn 2 S 4 The nano-array FTO is placed in the plasma cleaning machine, pumped to 5.0Pa, and Ar gas is introduced to adjust the voltage of the two poles in the cleaning chamber to 120V. Adjust the vacuum pump to keep the cleaning power at 60W, and clean for 30min. Cooling to get 60W cleaning ZnIn with S vacancies on the surface 2 S 4 Nanoarray electrode sheet.

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Abstract

The invention discloses a preparation method of a ZnIn2S4 nanosheet array rich in surface S vacancies, and belongs to a preparation method of a semiconductor photoelectrocatalytic material. The preparation method comprises the steps that firstly, a ZnIn2S4 nanosheet array is prepared and vertically grows on a substrate, then, a large number of S vacancies are generated on the surface of the substrate through plasma cleaning, and the introduction of different amounts of S vacancies is realized by adjusting the plasma cleaning power. The introduced S vacancies form a local energy level at the lower side of the ZnIn2S4 conduction band, so that the band gap width is reduced, and the light absorption performance of the ZnIn2S4 nano array electrode plate is improved. The S vacancy can also be used as a photo-induced electron trap, so that the service life of photo-induced charges is prolonged, and the photocatalytic performance is further improved. The ZnIn2S4 nanosheet array rich in S vacancies has the advantages of large specific surface area, good light absorption performance, loose preparation conditions, no toxicity, easiness in recovery in the material application process and recyclability.

Description

technical field [0001] The invention relates to a preparation method of a semiconductor photocatalytic material, especially a ZnIn rich in surface S vacancies 2 S 4 Nanosheet array photocatalytic material preparation method. Background technique [0002] The depletion of fossil energy has brought many global environmental problems. It is imminent to develop clean and sustainable energy, and more and more scientists are focusing on solar energy, which contains endless energy. The current solar photovoltaic industry mainly converts solar energy into electrical energy. If the electrical energy converted from light is further converted into chemical energy, it is necessary to build an electrochemical reaction pool, which causes a large energy loss in the entire reaction process. The direct conversion of electrical energy into chemical energy through photocatalytic reactions can reduce the intermediate process and is more conducive to the efficient utilization of energy. [0...

Claims

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Application Information

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IPC IPC(8): B01J27/04B01J35/10B01J37/10B01J37/34C01B3/04C03C17/34
CPCB01J27/04B01J37/10B01J37/349C01B3/042C03C17/347C03C2217/24C03C2217/71C03C2218/154C03C2218/111B01J35/33B01J35/40B01J35/39B01J35/61Y02E60/36
Inventor 蔡晓燕李坤顾修全毛梁李治
Owner CHINA UNIV OF MINING & TECH
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