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Photo-cross-linking polyimide resin

A technology of polyimide resin and photosensitive polyimide, which can be used in optics, optomechanical equipment, photo-engraving process of pattern surface, etc., and can solve problems such as limiting polyimide photosensitivity.

Active Publication Date: 2020-06-19
上海极紫科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the main chain of polyimide is highly rigid, it is not easy to generate photochemical reactions due to chain movement. Therefore, the ketone group on the main chain will definitely limit the photosensitivity of polyimide.

Method used

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  • Photo-cross-linking polyimide resin
  • Photo-cross-linking polyimide resin
  • Photo-cross-linking polyimide resin

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Add 70ml of solvent γ-butyrolactone into a dry and clean glass bottle, pass nitrogen protection, then add 3.048g of 4,4'-methylenebis(2,6-dimethylaniline) (12mmol) and 3.003g (6 mmol) of 1,4 bis(4-aminophenoxy)-2,5-dibenzoylbenzene, after all dissolved, slowly add 7.992 g (18 mmol) of 4,4'-( Hexafluoroisopropylidene) bis(phthalic anhydride), react at room temperature and keep stirring for 8-12 hours, add imidization reagent, acetic anhydride and triethylamine in excess of the molar number of amino groups, maintain nitrogen protection, room temperature Continue stirring for 10-20 hours. The obtained polymer solution was precipitated into methanol, stirred and washed, and dried in a vacuum oven for 8 hours to obtain a photocrosslinked polyimide resin whose side group was benzophenonetest sample No. 1.

Embodiment 2

[0044] Add 60ml of solvent γ-butyrolactone into a dry and clean glass bottle with a water separator, pass through nitrogen for protection, and then add 3.048g of 4,4'-methylenebis(2,6-dimethylaniline) ( 12mmol) and 3.916g (6 mmol) of 1,4-bis(4-aminophenoxy)-2,5-(4-phenylbenzoyl)benzene, after all dissolved, slowly add 7.992 g (18 mmol) of 4, 4'-(hexafluoroisopropylidene) bis(phthalic anhydride), react at room temperature and keep stirring for 8-12 hours, slowly drop in toluene and raise the temperature to 160°C, toluene Evaporate and dehydrate for 6 hours. The obtained polymer solution was precipitated into methanol, stirred and washed, and dried in a vacuum oven for 5 hours to obtain a photo-crosslinked polyimide resin whose side group was benzophenonetest sample No. 2.

Embodiment 3

[0046] Add 50ml of solvent N,N-dimethylacetamide to a dry and clean glass bottle, nitrogen protection, then add 2.54g of 4,4'-methylenebis(2,6-dimethylaniline) (10mmol ) and 1.682 g (3 mmol) of 1,4-bis(4-aminophenoxy)-2,5-bis(4-methoxybenzoyl)benzene, after all dissolved, slowly add 5.772 g (13mmol) of 4,4'-(hexafluoroisopropylidene) two (phthalic anhydride), react at room temperature and keep stirring for 12 hours, add imidization reagent, acetic anhydride and Triethylamine was maintained under nitrogen protection, and stirring was continued at room temperature for 7 hours. The obtained polymer solution was precipitated into methanol, stirred and washed, and dried in a vacuum oven for 5 hours to obtain a photo-crosslinked polyimide resin whose side group was benzophenone—test sample No. 3.

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Abstract

The invention relates to a polyimide resin structure with a benzophenone-containing side group. According to the invention, under the irradiation of ultraviolet light, free radicals can be generated and capture hydrogen on diamine close to the free radicals so as to generate a photo-cross-linking reaction, so that the structure has wide application prospect in the field of negative polyimide photoresist; the photo-cross-linking polyimide resin structure disclosed by the invention is represented by figure, wherein Ar1 is a dianhydride monomer segment, Ar2 is a diamine monomer segment containingactive hydrogen, x is equal to 0.1-1.0, and n is equal to 5-200; and the negative photosensitive polyimide obtained by the structure has good solubility, high sensitivity, good resolution and good contrast compared with negative polyimide with ketone carbonyl on a main chain.

Description

technical field [0001] The invention relates to the field of negative photoresist, in particular to a photocrosslinked polyimide resin (PSPI) structure and a preparation method thereof. Background technique [0002] In recent years, polyimide has been widely used in the fields of plastic engineering, aerospace and microelectronics due to its excellent performance. Among them, photosensitive polyimide (PSPI) has received much attention in the field of photolithography, especially the self-sensitizing system without adding photoinitiators and sensitizers, because the self-sensitizing photosensitive polyimide system is photosensitive There are no low-molecular-weight small molecules remaining after bonding, so it will not affect the mechanical properties, electrical properties, and thermal properties of the photoresist. [0003] Since J. Pfeifer first reported self-sensitizing polyimide synthesized from ketone anhydride (BTDA) in 1985, researchers have been working on improvin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/10G03F7/038
CPCC08G73/1071C08G73/1039C08G73/1042G03F7/0387
Inventor 不公告发明人
Owner 上海极紫科技有限公司