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Corrosive liquid and preparation method of chip mesa

A technology of etching liquid and mesa, which is applied in the direction of chemical instruments and methods, final product manufacturing, surface etching composition, etc., can solve the problems of uneven etching rate of chip mesa, uneven etching rate, rough etching surface, etc. , to achieve large-scale mass production, less damage to the chip surface, and good uniformity of the etched surface

Active Publication Date: 2020-06-19
SHENZHEN PHOGRAIN INTELLIGENT SENSING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The first object of the present invention is to provide an etching solution to solve the problems of uneven etching rate, rough etching surface and high etching cost caused by the dry etching of IPC in existing chips
[0004] The second object of the present invention is to provide a method for preparing a chip mesa to solve the problems of uneven etching rate, rough etched surface and high etching cost of the existing chip mesa

Method used

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  • Corrosive liquid and preparation method of chip mesa
  • Corrosive liquid and preparation method of chip mesa

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preparation example Construction

[0034] In a second aspect, the present invention provides a method for preparing a chip mesa, wherein a substrate provided with a photoresist is placed in the etching solution of the first aspect of the present invention for etching, and then a mesa is formed on the surface of the substrate.

[0035] It can be understood that the substrate provided with photoresist in the present invention is: the cleaned substrate is sequentially subjected to processes such as leveling, exposure, development, and film hardening, and the photoresist is used to form a layer on the surface of the substrate to be etched. patterned substrate.

[0036] Compared with dry etching, wet etching has the following advantages: there is no need to grow a dielectric film that blocks etching, and only one photoresist protection is required to complete it. The etching rate is basically a linear relationship, and the repeatability is better than that of similar dry etching. The process is simple, stable and lo...

Embodiment 1

[0039] S10, preparation of corrosion solution

[0040] The proportioning of each raw material of the corrosion solution prepared in the present embodiment is as follows:

[0041] Potassium dichromate: hydrobromic acid (40% volume fraction): water=1g: 20ml: 60ml, this corrosion solution preparation method comprises the following steps:

[0042] S101, mixing 5g of potassium dichromate with 300ml of deionized water;

[0043] S102. Add 100ml of hydrobromic acid to the above mixed liquid, and stir fully to obtain the required corrosion solution;

[0044] S20, chip mesa etching

[0045] S201. The cleaned In / InGaAs substrate is sequentially subjected to processes such as uniform coating, exposure, development, and film hardening, and a photoresist is used to form a pattern on the surface of the substrate to be etched;

[0046] S202, putting the above-mentioned substrate patterned with photoresist into the etching solution, and standing for etching for a certain period of time;

...

Embodiment 2

[0051]S10, preparation of corrosion solution

[0052] The proportioning of each raw material of the corrosion solution prepared in the present embodiment is as follows:

[0053] Potassium dichromate: hydrobromic acid (40% volume fraction): water=1.9g: 45ml: 100ml, this corrosion solution preparation method comprises the following steps:

[0054] S101, mixing 5.7g potassium dichromate with 300ml deionized water;

[0055] S102. Add 135ml of hydrobromic acid to the above mixed liquid, and stir well to obtain the required corrosion solution;

[0056] S20, chip mesa etching

[0057] S201. The cleaned In / InGaAs substrate is sequentially subjected to processes such as uniform coating, exposure, development, and film hardening, and a photoresist is used to form a pattern on the surface of the substrate to be etched;

[0058] S202, putting the above-mentioned substrate patterned with photoresist into the etching solution, and standing for etching for a certain period of time;

[00...

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Abstract

The invention provides a corrosive liquid and a preparation method of a chip mesa, and relates to the field of semiconductor chip preparation. The corrosive liquid comprises a solvent, dichromate andhaloid acid, wherein the dichromate and the haloid acid are dissolved in the solvent. By utilizing the corrosive liquid, the problems of non-uniform etching rate, rough etching surface and high etching cost caused by IPC dry etching of the existing chip can be solved, so that the etching rate is uniform, the etching cost is reduced, and the surface etching quality is improved.

Description

technical field [0001] The invention relates to the field of semiconductor chip preparation, in particular to an etching solution and a method for preparing a chip mesa. Background technique [0002] With the rapid development of optical communication technology, the transmission rate of optical communication is getting faster and faster, and the photodetector chip, as the core chip in the optical communication system, has higher and higher requirements for the receiving rate. The chip with the structure adopts mature technology, high production yield, good stability and reliability, but the chip with the planar structure cannot fully meet the broadband performance requirements of the high-speed photodetector chip. In order to improve the transmission rate, high-speed photoelectric Most detector devices use mesa structure chips. In order to make the mesa structure, the current mainstream method is to use ICP equipment for dry etching. However, ICP dry etching has the disadv...

Claims

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Application Information

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IPC IPC(8): C09K13/04H01L21/306H01L21/308H01L31/18
CPCC09K13/04H01L21/30612H01L21/308H01L31/1844Y02P70/50
Inventor 邹颜杨彦伟刘宏亮陆一锋
Owner SHENZHEN PHOGRAIN INTELLIGENT SENSING TECH CO LTD
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