Dual-wavelength tunable semiconductor laser based on electrode grating
A laser and semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems that limit the mass production and application of dual-wavelength semiconductor lasers, complex and expensive secondary epitaxy technology, etc., and achieve lower precision requirements and easy preparation , The effect of simple process
Active Publication Date: 2020-06-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
The preparation of these dual-wavelength semiconductor laser gratings requires complex and expensive electron beam lithography technology and secondary epitaxy technology.
This limits the mass-production application of dual-wavelength semiconductor lasers
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[0046] The invention discloses a dual-wavelength tunable semiconductor laser based on an electrode grating, wherein the waveguide structure is a Y branch waveguide structure, and the periods of the two branch electrode gratings are different. The electrode grating is composed of an ohmic contact layer, a passivation layer and an electrode layer. It is characterized in that the passivation layer is a spatially periodic grating structure on the two branches of the Y branch waveguide, so that the electrode layer formed between the P surface and the ohmic contact layer The ohmic contact is a space periodic grating structure on the two branches of the Y branch waveguide. The electrode grating structure includes a uniform grating structure, a sampling grating structure, and a chirped reconstruction grating structure. The invention utilizes the Y-branch waveguide structure to realize dual-wavelength output at the same position on the light-emitting surface, utilizes the electrode gra...
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Abstract
The invention discloses a dual-wavelength tunable semiconductor laser. The laser sequentially comprises an N-surface electrode layer, a substrate layer, a buffer layer, a lower waveguide layer, an active layer, an upper waveguide layer, an etching self-stop layer, a cladding layer, an ohmic contact layer, a passivation layer and a P-surface electrode layer from bottom to top, the cladding layer and the ohmic contact layer form a waveguide structure, the waveguide structure is a Y-branch waveguide structure, and a grating structure of the laser is an electrode grating. Dual-wavelength output isrealized at the same position of the light emitting surface by using the Y-branch waveguide structure. The electrode grating structure comprises a high-order uniform grating structure, a high-order sampling grating structure and a chirp reconstruction grating structure, the precision requirement in the process manufacturing process is reduced, and preparation is easy.
Description
technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a dual-wavelength tunable semiconductor laser based on an electrode grating. Background technique [0002] Dual-wavelength tunable lasers are widely used in wavelength division multiplexing, terahertz light sources, optical remote sensing, and optical-borne microwaves. Among them, compared with other types of lasers, dual-wavelength semiconductor lasers have the advantages of small size, high power, stable output wavelength, and easy preparation. It is an important research direction for dual-wavelength lasers. [0003] At present, dual-wavelength laser lasing can be achieved through structures such as resonant coupled cavities, double resonant cavities, and Y-branched waveguides. The preparation of these dual-wavelength semiconductor laser gratings requires complex and expensive electron beam lithography technology and secondary epitaxy technology. This limits the...
Claims
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Login to View More IPC IPC(8): H01S5/042H01S5/062
CPCH01S5/0421H01S5/0425H01S5/0427H01S5/062H01S2304/00H01S2304/04
Inventor 许博蕊孙甲政夏施君孙文惠包帅袁海庆祝宁华朱厦徐长达王丹丹齐艺超
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI