Seed crystal support and method for reducing penetration type dislocation density in silicon carbide single crystal

A silicon carbide seed and bonding silicon carbide technology, which is applied in the field of silicon carbide single crystal growth, can solve problems such as complex steps, stacking fault defects, and reduced threading dislocation density

Pending Publication Date: 2020-06-26
广州南砂晶圆半导体技术有限公司
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Problems solved by technology

For dislocations in SiC single crystals, the "RepeatedA-Face (RAF)" method is currently used, that is, the alternate growth of the a-plane (11-20) and the m-plane (1-100) is repeated many times, and then the c However, this method requires repeated growth, the steps are complicated and other defects are easily introduced during repeated growth; there is also a

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  • Seed crystal support and method for reducing penetration type dislocation density in silicon carbide single crystal
  • Seed crystal support and method for reducing penetration type dislocation density in silicon carbide single crystal
  • Seed crystal support and method for reducing penetration type dislocation density in silicon carbide single crystal

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[0040] The exemplary embodiments will be described in detail here, and examples thereof are shown in the accompanying drawings. When the following description refers to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all implementation manners consistent with the present invention. Rather, they are merely examples of devices and methods consistent with some aspects of the present invention as detailed in the appended claims.

[0041] figure 1 This is a schematic diagram of the basic structure of a seed crystal holder provided in an embodiment of this application. Such as figure 1 As shown, the graphite seed crystal holder 200 of this embodiment has a first surface and a second surface opposite to each other. The surface used for bonding with the silicon carbide seed crystal in this embodiment is the fir...

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Abstract

The invention provides a seed crystal support and a method for reducing penetration type dislocation density in a silicon carbide single crystal. The grooves are formed in the seed crystal support, the grooves are filled with the materials with the heat conductivity different from that of graphite, or the seed crystal support is directly plated with the thin film with the heat conductivity different from that of the graphite, so that two substances with the different heat conductivities exist on the surface of the seed crystal support during crystal growth, heat dissipation is uneven, and thenuneven distribution of a temperature field on the surface of the seed crystal is caused. Therefore, periodic distribution of two substances with different thermal conductivities on the seed crystal support can be utilized; according to the method, the distribution of a seed crystal surface temperature field in the SiC physical vapor transport growth process is modulated, preferential nucleation is forced to be carried out in a low-temperature area corresponding to a predefined pattern, selective preferential growth is carried out according to the predefined pattern, and then lateral growth iscarried out, so that the purpose of reducing the penetration type dislocation density is achieved.

Description

technical field [0001] The present application relates to the technical field of silicon carbide single crystal growth, in particular to a seed crystal support and a method for reducing threading dislocation density in silicon carbide single crystal. Background technique [0002] As a representative of the third-generation wide bandgap semiconductor materials, silicon carbide materials have excellent physical and chemical properties such as large band gap, high carrier saturation migration velocity, high thermal conductivity, high critical breakdown electric field strength, and good chemical stability. . Based on these excellent characteristics, SiC materials are considered to be ideal materials for making high-frequency, high-power, high-temperature-resistant and radiation-resistant electronic devices. , nuclear reactor systems and military equipment and other fields have a wide range of applications. [0003] Growing large-diameter, high-quality SiC single crystals is th...

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Application Information

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IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 杨祥龙徐现刚王垚浩于国建陈秀芳
Owner 广州南砂晶圆半导体技术有限公司
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