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Method for growing uranium dioxide crystal by using aluminum oxide fluxing agent

A technology of uranium dioxide and flux, applied in chemical instruments and methods, melt from molten solvent, single crystal growth, etc., to achieve the effects of improving thermal conductivity, improving nuclear safety, and reducing radiation swelling

Inactive Publication Date: 2020-06-26
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for growing uranium dioxide crystals using alumina flux, to solve the thermal problem of uranium dioxide ceramic fuel rods, and to expand its application in semiconductor, solar energy, thermoelectric and other fields

Method used

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  • Method for growing uranium dioxide crystal by using aluminum oxide fluxing agent
  • Method for growing uranium dioxide crystal by using aluminum oxide fluxing agent
  • Method for growing uranium dioxide crystal by using aluminum oxide fluxing agent

Examples

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example 1

[0034] The purity is 99.99% UO 2 Raw materials and 99.9% Al 2 o 3 The raw materials are mixed and ground according to the molar ratio of 76.9:23.1, and the UO 2 -Al 2 o 3The raw materials are pressed and formed into 18×40mm dense cylindrical pellets; the cylindrical pellets are put into a tungsten crucible, the tungsten crucible is placed in a graphite crucible, and the graphite crucible is sealed; the graphite crucible is placed in the induction copper of a high-frequency induction heating device In the middle of the coil, the induction copper coil is fed with circulating cooling water to take away the heat of the system and maintain the temperature balance of the system; the inside of the heating furnace is filled with heat insulating powder to keep warm, and Ar / H2 (5% vol.) is introduced to start the induction heating device. Use high-frequency induction heating to raise the temperature to 2600°C, keep it warm for 12 hours, fully melt the uranium dioxide raw material, c...

example 2

[0036] The purity is 99.99% UO 2 Raw materials and 99.9% Al 2 o 3 The raw materials are mixed and ground according to the molar ratio of 77.2:22.8, and the UO 2 -Al 2 o 3 The raw materials are pressed and formed into 18×40mm dense cylindrical pellets; the cylindrical pellets are put into a tungsten crucible, the tungsten crucible is placed in a graphite crucible, and the graphite crucible is sealed; the graphite crucible is placed in the induction copper of a high-frequency induction heating device In the middle of the coil, circulating cooling water is introduced into the induction copper coil to take away the heat of the system and maintain the temperature balance of the system;

[0037] Fill the inside of the heating furnace with insulation powder to keep it warm, and pass Ar / H 2 (5% vol.), start the induction heating device, use high-frequency induction heating to raise the temperature to 2600 ° C, keep it for 12 hours, fully melt the uranium dioxide raw material, and...

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Abstract

The invention belongs to the technical field of crystal growth, and particularly discloses a method for growing a uranium dioxide crystal by using an aluminum oxide fluxing agent. The method includesthe steps of: (1) uniformly mixing UO2-Al2O3 raw materials according to a designed molar ratio, and then performing pressing into a pellet; (2) putting the pellet obtained in step (1) into a tungstencrucible and putting the tungsten crucible into a graphite crucible; (3) placing the graphite crucible in step (2) in the middle of an induction coil of a high-frequency induction heating device; (4)performing heating to fully melt the raw materials, and conducting cooling slowly to obtain a uranium dioxide crystal ingot; and (5) separating the fluxing agent in the obtained crystal ingot from thecrystal to obtain the uranium dioxide single crystal. The scheme is mainly used for preparing the uranium dioxide single crystal, aims to research the physical and chemical properties of the single crystal and further solves the problem of interaction between fuel and a cladding due to irradiation swelling caused by a fission product generated in the fission process of a nuclear fuel rod, and expands the application of the single crystal in the fields of semiconductors, solar energy and thermoelectricity.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and specifically discloses a method for growing uranium dioxide crystals by using an alumina flux. Background technique [0002] Uranium dioxide (UO 2 ) belongs to the cubic crystal system, with a melting point of 2878°C and a boiling point of 3500°C. Uranium dioxide is an important nuclear material and the most widely used nuclear fuel for power reactors. The melting point of uranium dioxide is as high as 2878°C, which expands the available operating temperature of the reactor; UO 2 Good irradiation stability, can maintain its stable size and shape after long-term irradiation; UO 2 Below the melting point there is only one crystalline form, which is isotropic. Uranium dioxide is also an excellent semiconductor material with a bandwidth of about 1.3eV, which is between silicon and gallium arsenide. Uranium dioxide is close to the efficiency-bandwidth curve for optimal absorption of so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B9/12
CPCC30B9/12C30B29/16
Inventor 徐家跃潘芸芳李志超周鼎田甜
Owner SHANGHAI INST OF TECH
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