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Single-crystal high-temperature alloy thin-wall casting based on secondary orientation control and preparation method thereof

A technology for high-temperature alloys and thin-walled castings, applied in the field of high-temperature alloys, can solve problems affecting the mechanical properties of alloys, and achieve the effects of reducing manual errors, precise control, and convenient adjustment

Active Publication Date: 2020-07-03
成都航大新材料有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mechanical properties of single crystal superalloys have significant anisotropy. Not only the primary orientation in the axial direction, but also the secondary orientation in the normal direction also significantly affect the mechanical properties of the alloy.

Method used

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  • Single-crystal high-temperature alloy thin-wall casting based on secondary orientation control and preparation method thereof
  • Single-crystal high-temperature alloy thin-wall casting based on secondary orientation control and preparation method thereof
  • Single-crystal high-temperature alloy thin-wall casting based on secondary orientation control and preparation method thereof

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preparation example Construction

[0034] The invention provides a method for preparing a single crystal superalloy thin-walled casting based on secondary orientation control, comprising the following steps:

[0035] Cut out the seed crystal 1 with the required primary orientation and secondary orientation on the single crystal superalloy sample;

[0036] The seed crystal 1 is inserted into the triangular prism primary amplifier 2 to obtain a seed crystal amplifier combination; the material of the primary amplifier 2 is wax;

[0037] The wax paper 5 is attached to the surface of the ceramic sheet 4, and a wax pattern is formed on the surface of the ceramic sheet 4; the shape and size of the wax paper are the same as the target single crystal superalloy thin-walled casting; The top edges of 4 coincide;

[0038] Attach the secondary amplifier 3 to the lower end of the ceramic sheet 4 on the same side of the wax pattern to obtain a support wax pattern amplifier combination; the secondary amplifier 3 is an inverte...

Embodiment 1

[0067] Prepare a single crystal thin-walled casting with the axial direction and the side normal direction :

[0068]Step 1: Use the Laue X-ray diffraction method to calibrate the crystal orientation on the single crystal superalloy (Ni-6Al-3Ta-3Cr-3Co-6Mo) sample, and cut out the direction of the direction in the axial direction, and the normal direction of the side is A cuboid single crystal sample in the direction is used as a seed crystal, the bottom surface is 2.5mm×2.5mm, and the height is 30mm. The prepared seed crystals were successively polished by 60#, 360#, 600#, 1000#, 1500# and 2000# water sandpaper, and then used 20% H 2 o 2 +80% HCl (volume fraction) mixed solution was corroded for 10 minutes, and the seed crystal material with controlled secondary orientation was obtained after ultrasonic cleaning.

[0069] Step 2: Punch or cut the wax material into a triangular prism as the primary amplifier 2. The height of the triangular prism is 10 mm, the bottom is an...

Embodiment 2

[0074] Prepare a single crystal thin-walled casting with the axial direction and the side normal direction :

[0075] Step 1: Use the Laue X-ray diffraction method to calibrate the crystal orientation on the single crystal superalloy (Ni-6Al-3Ta-3Cr-3Co-6Mo) sample, and cut out the direction of the direction in the axial direction, and the normal direction of the side is A cuboid single crystal sample in the direction is used as a seed crystal, with a bottom surface of 3mm×3mm and a height of 24mm. The prepared seed crystals were successively polished by 60#, 360#, 600#, 1000#, 1500# and 2000# water sandpaper, and then used 20% H 2 o 2 +80% HCl (volume fraction) mixed solution was corroded for 10 minutes, and the seed crystal material with controlled secondary orientation was obtained after ultrasonic cleaning.

[0076] Step 2: Punch or cut the wax material into a triangular prism as the primary amplifier 2. The height of the triangular prism is 10 mm, the bottom is an is...

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Abstract

The invention relates to the technical field of high-temperature alloys, in particular to a single-crystal high-temperature alloy thin-wall casting based on secondary orientation control and a preparation method thereof. By adopting the method, single-crystal high-temperature alloy thin-wall castings with different primary orientations and secondary orientations can be prepared, and meanwhile, mixed crystals can be prevented from being generated. The single-crystal high-temperature alloy thin-wall casting based on secondary orientation control is prepared, a three-dimensional crystal orientation material with the optimal performance is selected to prepare a single-crystal high-temperature alloy blade by researching the thin-wall effect of the alloy under secondary orientation, and great significance is achieved for prolonging the service life of the single-crystal high-temperature alloy blade.

Description

technical field [0001] The invention relates to the technical field of superalloys, in particular to a single crystal superalloy thin-walled casting based on secondary orientation control and a preparation method thereof. Background technique [0002] Single crystal superalloys are widely used in the field of turbine blades of advanced aero-engines and gas turbines due to their excellent high-temperature mechanical properties. The increasing demand for engine thrust has caused the temperature at the inlet of the engine turbine to rise sharply. In order to improve the cooling efficiency of the blades, the interior of the turbine blades of advanced aero-engines often adopts a complex hollow air-cooled structure. This structure makes the minimum wall thickness of single crystal superalloy blades Reduced to below 0.5mm, the resulting thin-wall effect has also attracted widespread attention. [0003] At present, the crystal selector method is mostly used in industrial production...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22D27/04B22C9/04
CPCB22C9/04B22D27/045
Inventor 裴延玲胡斌李树索宫声凯
Owner 成都航大新材料有限公司
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