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OLED device structure

An electroluminescent device, phosphorescence doping technology, applied in the direction of electric solid device, semiconductor device, semiconductor/solid state device manufacturing, etc., can solve the problems of accelerated annihilation, adverse device performance, improvement and other problems

Inactive Publication Date: 2020-07-07
GUANGDONG AGLAIA OPTOELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Narrow recombination regions lead to higher local exciton density and accelerated T 1 -T 1 Annihilation is not conducive to the improvement of device performance

Method used

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  • OLED device structure
  • OLED device structure
  • OLED device structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1 (comparative experiment)

[0029] figure 1 An organic electroluminescent device that is one light-emitting layer of an OLED in the prior art

[0030] Among them, transparent conductive ITO glass substrate 10; anode 20; 3nm thick HATCN hole injection layer 30; 50nm thick TAPC hole transport layer 40; 10nm thick guest Pt-04 and host TCTA doping ratio of 20wt% as light emitting 50 nm thick TmPyPb electron transport layer 60 ; 0.8 nm LiF electron injection layer 70 ; 100 nm Al as device cathode 80 . The preparation method is the same as the preparation method of the present invention.

[0031] figure 2 An organic electroluminescent device that is the OLED two-layer light-emitting layer of the present application

[0032] First, the transparent conductive ITO glass substrate 10 (with the anode 20 on it) is sequentially washed with detergent solution, deionized water, ethanol, acetone, and deionized water, and then treated with oxygen plasma for 30 seconds. ...

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Abstract

The invention relates to an OLED device structure, and particularly relates to an optimization scheme of the doping proportion of a light-emitting layer of a phosphorescent doped organic light-emitting material device. The host-guest material of the light-emitting layer is unchanged, the doping ratio of the light-emitting layer is converted from single-layer doping to multi-layer echelon concentration doping, a material device is prepared through a vacuum evaporation method and can be applied to a novel flat panel display technology, and the device using the OLED device structure has good electroluminescent performance.

Description

technical field [0001] The present invention relates to a preparation scheme of a novel organic electroluminescence material device for plane display, in particular to an optimization scheme of the doping ratio of the light-emitting layer of a phosphorescence-doped organic electroluminescence material device, and the material device is prepared by a vacuum evaporation method. It can be applied to new flat display technology. Background technique [0002] In recent years, organic light-emitting diodes (OLEDs), as a lighting and display technology with great application prospects, have attracted extensive attention from academia and industry. OLED devices have the advantages of self-illumination, wide viewing angle, short response time, and flexible devices can be prepared, and become a strong competitor in the next generation of display and lighting technologies. However, OLED devices still have problems such as low efficiency and short lifespan, which need further research....

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/00H10K50/11H10K71/00
Inventor 王坤戴雷蔡丽菲
Owner GUANGDONG AGLAIA OPTOELECTRONICS MATERIALS
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