Solid lubrication method for cup-shaped harmonic gear reducer
A gear reducer, solid lubrication technology, applied in the direction of gear lubrication/cooling, elements with teeth, belts/chains/gears, etc., can solve the problems of low hardness, limited wear resistance, sensitive tribological properties, etc.
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Embodiment 1
[0051] (1) After splitting the XBS-80-100 cup-type harmonic gear reducer into rigid wheels, flexible wheels, flexible bearing inner rings, flexible bearing outer rings, flexible bearing steel balls, cams and baffles, the Ultrasonic cleaning was carried out in gasoline and acetone (analytical pure), and air-dried to obtain the components to be treated with solid lubrication.
[0052] (2) Equipped with clean gloves, load the flexible spline, large block and small block to be treated with solid lubrication on the workpiece rack of the coating vacuum chamber at the same time, close the door of the vacuum chamber, turn on the mechanical pump and molecular pump in turn to pump the vacuum chamber to Vacuum degree is 5.0×10 -3 Pa; turn on the argon valve and gas filling valve in turn, fill the vacuum chamber with argon until the partial pressure of argon in the vacuum chamber is maintained at 2.5Pa; turn on the DC bias power supply, adjust the DC bias value until the argon plasma is g...
Embodiment 2
[0065] The difference between this embodiment and embodiment 1 is only that the conditions of film deposition are different:
[0066] The power supply of Cr target sputtering and WC target sputtering is 4kW, the DC bias voltage is -50V, the deposition time is 10min, and the rotation speed of the workpiece holder is 1r / min;
[0067] The WC target sputtering power of plasma-assisted chemical vapor deposition combined with closed-field unbalanced magnetron sputtering is 2kW, the DC bias voltage is -500V, the deposition time is 60min, and the rotation speed of the workpiece holder is 1r / min.
[0068] MoS 2 Target sputtering and WS 2 The power of the target sputtering is 4kW, the DC bias voltage is -50V, the deposition time is 60min, and the rotating speed of the workpiece holder is 1r / min.
[0069] The thickness of the deposited film was measured by light interference microscopy, where MoS 2 / WS 2 The thickness of the nanometer multilayer self-lubricating film is 1.2 μm, and t...
Embodiment 3
[0073] The difference between this embodiment and embodiment 1 is only that the conditions of film deposition are different:
[0074] The power of Cr target sputtering and WC target sputtering is both 8kW, the DC bias voltage is -200V, the deposition time is 20min, and the rotation speed of the workpiece holder is 10r / min; the combination of plasma-assisted chemical vapor deposition The power of WC target sputtering in closed field unbalanced magnetron sputtering is 4kW, the DC bias voltage is -700V, the deposition time is 90min, and the rotating speed of the workpiece holder is 10r / min.
[0075] MoS 2 Target sputtering and WS 2 The power of the target sputtering is 6kW, the DC bias voltage is -100V, the deposition time is 90min, and the rotating speed of the workpiece holder is 3r / min.
[0076] The thickness of the deposited film was measured by light interference microscopy, where MoS 2 / WS 2 The thickness of the nanometer multilayer self-lubricating film is 2.9 μm, and ...
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