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Heterojunction solar cell taking hydrogenated amorphous silicon oxynitride thin films as passivation layers

A technology for hydrogenating amorphous silicon and silicon oxynitride, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of difficult silicon oxide preparation and inability to passivate the interface well, so as to improve photoelectric conversion efficiency, increase thickness, The effect that the process is easy to achieve

Inactive Publication Date: 2020-07-14
熵熠(上海)能源科技有限公司
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Problems solved by technology

However, such thin silicon oxide is difficult to prepare and cannot passivate the interface well, so it needs to be used in combination with other passivation materials

Method used

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  • Heterojunction solar cell taking hydrogenated amorphous silicon oxynitride thin films as passivation layers

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Embodiment

[0024] A method for preparing a heterojunction solar cell using a hydrogenated amorphous silicon oxynitride film as a passivation layer:

[0025] Step 1: Prepare an n-type Cz monocrystalline silicon wafer with an industrial-grade crystal orientation of (100), a resistivity of 0.5-3 Ω·cm, and a thickness of 100-180 μm as an n-type crystalline silicon substrate, and remove all the silicon wafers with sodium hydroxide solution. The damage layer formed on the surface of the n-type crystalline silicon substrate due to wire cutting;

[0026] Step 2: Texturing the n-type crystalline silicon substrate obtained in step 1 with an alkaline solution, and then performing standard RCA cleaning to obtain a pretreated silicon wafer;

[0027] Step 3: Put the silicon wafer obtained in step 2 into the vacuum chamber of PECVD, and the background vacuum in the vacuum chamber reaches 5×10 -4 After Pa, under the condition of silicon wafer substrate temperature 150~300℃, use H 2 and SiH 4 is the r...

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Abstract

The invention discloses a heterojunction solar cell taking hydrogenated amorphous silicon oxynitride thin films as passivation layers. The heterojunction solar cell is characterized by comprising an n-type monocrystalline silicon wafer; a hydrogenated amorphous silicon oxynitride thin film layer, a p-type hydrogenated amorphous silicon thin film layer, a transparent conductive oxide thin film layer and a metal grid line electrode are sequentially formed on the front surface of the n-type monocrystalline silicon wafer; and a hydrogenated amorphous silicon oxynitride thin film layer, an n-type hydrogenated amorphous silicon thin film layer, a transparent conductive oxide thin film layer and a metal grid line electrode are sequentially formed on the back surface of the n-type monocrystallinesilicon wafer. According to the heterojunction solar cell of the invention, the hydrogenated amorphous silicon oxynitride thin films are used as the intrinsic passivation layers of the heterojunctionsolar cell and have an excellent passivation effect on the surface of crystalline silicon, so that interface carrier recombination is reduced and the conversion efficiency of the heterojunction solarcell is improved.

Description

technical field [0001] The invention relates to a heterojunction solar cell using a hydrogenated amorphous silicon oxynitride film as a passivation layer, and belongs to the technical field of silicon solar cells. Background technique [0002] n-type crystalline silicon solar cell technology has received more and more attention in recent years, mainly passivated emitter rear surface fully diffused cells (n-PERT), tunnel oxide passivated contact cells (TOPCon) and heterojunction cells ( HJT). Among them, the heterojunction solar cell with intrinsic thin layer developed by Sanyo Corporation of Japan is to insert a layer of intrinsic hydrogenated amorphous silicon thin film between the n-type single crystal silicon substrate and the doped amorphous silicon thin film emitter. layer (i-a-Si:H) to passivate the interface of the heterojunction, thereby improving the efficiency of the cell, and has achieved industrialization. Heterojunction solar cells have the characteristics of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0747H01L31/0216
CPCH01L31/02167H01L31/0747Y02E10/50
Inventor 杨杰李正平刘超任栋樑徐小娜周国平陈昌明
Owner 熵熠(上海)能源科技有限公司
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