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Display panel, preparation method thereof and display device

A technology for display panels and substrates, applied in the manufacture of semiconductor/solid-state devices, electrical components, transistors, etc., can solve the problems of light cross-color, low luminous efficiency of display panels, low light utilization rate, etc., to avoid cross-color phenomenon, improve The utilization of light, the effect of reducing the influence

Pending Publication Date: 2020-07-24
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a display panel and its preparation method, and a display device, which can solve the problems of light cross-color phenomenon, low light utilization rate and low luminous efficiency of the display panel in the existing display panel.

Method used

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  • Display panel, preparation method thereof and display device
  • Display panel, preparation method thereof and display device
  • Display panel, preparation method thereof and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Such as figure 1As shown, this embodiment provides a display device, including a display panel 100 . The display panel 100 includes: a substrate 1 , a thin film transistor layer 2 , a first passivation layer 3 , a pixel electrode layer 4 , a contact electrode layer 5 , a second passivation layer 6 , a black matrix layer 7 and a reflective layer 8 .

[0047] Wherein, the substrate 1 can be a flexible substrate, which has the function of blocking water and oxygen, and the substrate 1 can have better impact resistance, and can effectively protect the display panel 100 . The material of the substrate 1 includes one or more of glass, silicon dioxide, polyethylene, polypropylene, polystyrene, polylactic acid, polyethylene terephthalate, polyimide or polyurethane.

[0048] Such as figure 1 As shown, the thin film transistor layer 2 is disposed on the substrate 1 for controlling electron conversion of pixels and providing circuit support for the display panel 100 . Wherein, ...

Embodiment 2

[0066] Such as Figure 8 As shown, the display panel of this embodiment includes most of the technical features of the display panel of Embodiment 1. The difference between the display panel of this embodiment and the display panel of Embodiment 1 lies in: the reflective layer 8 in the display panel of this embodiment It is arranged between the first passivation layer 3 and the pixel electrode layer 4 , instead of being arranged on the black matrix layer 7 in the display panel of the first embodiment.

[0067] Such as figure 2 As shown, the difference between the display panel of this embodiment and the display panel of Embodiment 1 is that: the display panel in this embodiment further includes an insulating layer 9, which is arranged on the reflective layer 8 and the pixel electrode layer 4 between. The main purpose is to avoid the phenomenon of electric leakage of the reflective layer caused by the contact between the reflective layer 8 and the pixel electrode layer 4, th...

Embodiment 3

[0072] Such as Figure 10 As shown, the display panel of this embodiment includes most of the technical features of the display panel of Embodiment 1. The difference between the display panel of this embodiment and the display panel of Embodiment 1 is that the reflective layer 8 is set in the display panel of this embodiment Between the first passivation layer 3 and the pixel electrode layer 4 , instead of being disposed on the black matrix layer 7 in the display panel of the first embodiment.

[0073] Such as Figure 10 As shown, the difference between the display panel of this embodiment and the display panel of Embodiment 1 is that: the display panel of this embodiment further includes an insulating layer 9 disposed between the reflective layer 8 and the pixel electrode layer 4 . The main purpose is to avoid the phenomenon of electric leakage of the reflective layer caused by the contact between the reflective layer 8 and the pixel electrode layer 4, thereby avoiding the p...

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Abstract

The invention relates to a display panel, a preparation method thereof and a display device. On one hand, by adding a black matrix layer in the display panel, the influence of light of an inorganic semiconductor self-luminous device on internal devices of a thin film transistor layer is weakened, and meanwhile, the phenomenon of color crossing between different pixels can be avoided; and on the other hand, a reflective layer is added in the display panel, so that the light of the inorganic semiconductor self-luminous device towards the thin film transistor layer can be reflected, the utilization rate of the light of the inorganic semiconductor self-luminous device is improved, and the luminous efficiency of the display panel is further improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a display panel, a manufacturing method thereof, and a display device. Background technique [0002] The display device can convert the data of the computer into various characters, numbers, symbols or intuitive images and display them, and can use keyboard and other input tools to input commands or data into the computer, and add, delete, modify and change the display at any time with the help of the system's hardware and software. content. Display devices are classified into plasma, liquid crystal, light emitting diode, and cathode ray tube according to the display device used. [0003] LCD (English full name: Liquid Crystal Display, liquid crystal display). Liquid crystal display uses liquid crystal material as the basic component, fills the liquid crystal material between two parallel plates, and changes the arrangement of molecules inside the liquid crystal material throu...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L29/786H01L27/15H01L21/84H01L21/34
CPCH01L27/156H01L27/1218H01L27/1262H01L29/78633H01L29/66969
Inventor 谢华飞陈书志
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD