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Photoresist composition as well as preparation method and application thereof

A technology of composition and photoresist, which is applied in the field of photoresist, can solve problems such as poor thermal stability, and achieve the effects of good thermal stability, stable structure and excellent temperature resistance

Pending Publication Date: 2020-07-28
SUNTIFIC MATERIALS WEIFANG LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The first object of the present invention is to provide a photoresist composition to solve the technical problem of poor thermal stability in the prior art

Method used

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  • Photoresist composition as well as preparation method and application thereof
  • Photoresist composition as well as preparation method and application thereof
  • Photoresist composition as well as preparation method and application thereof

Examples

Experimental program
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Embodiment 1

[0071] The photoresist composition of the present embodiment comprises following components:

[0072] Film-forming resin 20g,

[0073] Tetraphenylethylene derivatives 10g,

[0074] Cross-linking agent 5g,

[0075] Photosensitizer 1g,

[0076] Solvent 60g.

[0077] Wherein, the film-forming resin is a novolak resin with the following structure R is a propyl group, n=50;

[0078] The structural formula of tetraphenylethylene derivatives is

[0079] The crosslinking agent is a diazo resin, and the structural formula of the diazo resin is

[0080] The photosensitizer is triphenylsulfonium hexafluoroantimonate;

[0081] The solvent is propylene glycol methyl ether.

[0082] The preparation method of described photoresist composition comprises the steps:

[0083] The above components are mixed, fully dissolved, and then filtered through a filter membrane with a pore size of 0.02 μm to obtain a photoresist composition solution.

[0084] The photolithography process of ...

Embodiment 2

[0087] The photoresist composition of the present embodiment comprises following components:

[0088] Film-forming resin 30g,

[0089] Tetraphenylethylene derivatives 10g,

[0090] Cross-linking agent 10g,

[0091] Photosensitizer 2g,

[0092] Solvent 80g.

[0093] Wherein, the film-forming resin is polyvinyl formal phthalate;

[0094] The structural formula of tetraphenylethylene derivatives is

[0095] The crosslinking agent is a diazo resin, and the structural formula of the diazo resin is TSO - For p-toluenesulfonate;

[0096] The photosensitizer is bis(4-tert-butylphenyl)iodonium p-toluenesulfonate;

[0097] The solvent is propylene glycol methyl ether acetate.

[0098] The preparation method of described photoresist composition comprises the steps:

[0099] The above components are mixed, fully dissolved, and then filtered through a filter membrane with a pore size of 0.02 μm to obtain a photoresist composition solution.

[0100] The photolithography proces...

Embodiment 3

[0103] The photoresist composition of the present embodiment comprises following components:

[0104] Film-forming resin 40g,

[0105] Tetraphenylethylene derivatives 18g,

[0106] Cross-linking agent 15g,

[0107] Photosensitizer 3g,

[0108] Solvent 90g.

[0109] Wherein, the film-forming resin is a novolak resin with the following structure n=60;

[0110] The structural formula of tetraphenylethylene derivatives is

[0111] The crosslinking agent is a diazo resin, and the structural formula of the diazo resin is x - is dodecylsulfonate;

[0112] The photosensitizer is triphenylsulfonium perfluorobutyl methanesulfonate;

[0113] The solvent is ethyl lactate.

[0114] The preparation method of described photoresist composition comprises the steps:

[0115] The above components are mixed, fully dissolved, and then filtered through a filter membrane with a pore size of 0.02 μm to obtain a photoresist composition solution.

[0116] The photolithography process of...

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Abstract

The invention relates to the technical field of photoresists and particularly relates to a photoresist composition as well as a preparation method and application thereof. The photoresist compositionis mainly prepared from the following components, by weight, 20-40 parts of film-forming resin, 5-20 parts of tetraphenyl ethylene derivative, 2-20 parts of cross-linking agent, 0.5-20 parts of photosensitizer and solvent, wherein the tetraphenyl ethylene derivative is a hydroxyl-containing substituted tetraphenyl ethylene compound, and the cross-linking agent comprises diazonium resin containingnitryl. The photoresist composition is advantaged in that the tetraphenylethylene derivative structure with the structure is matched with the specific cross-linking agent for use, the tetraphenylethylene derivative has certain rigidity, so high stability of a photoresist product is ensured, moreover, diazobenzene is cracked differently under the electron withdrawing action of nitryl to generate alarge number of diphenylamine cations, and the diphenylamine cations react with hydroxyl nucleophilic groups on the tetraphenylethylene derivative structure for crosslinking, so thermal stability is ensured, the adhesive force between a film layer and a substrate is improved, and the storage time is prolonged.

Description

technical field [0001] The invention relates to the technical field of photoresist, in particular to a photoresist composition and its preparation method and application. Background technique [0002] Photoresists are used in photolithography to manufacture microelectronic devices, such as computer chips and integrated circuits. It generally needs to coat a layer of uniform photoresist on the surface of substrate materials such as silicon wafers, sapphire wafers, etc., then bake it to evaporate and remove the solvent in the glue, and then perform exposure to make the main photoresist The components react under the light to change the structure of the components and their dissolution rate in the developer, and then develop to realize the transfer of the mask pattern on the substrate to form the required photolithography pattern, and finally perform post-baking to improve the photolithography performance. The temperature resistance and etching resistance of the glue in the et...

Claims

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Application Information

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IPC IPC(8): G03F7/038G03F7/004G03F7/16
CPCG03F7/038G03F7/004G03F7/16G03F7/168
Inventor 向容刘聘周元基
Owner SUNTIFIC MATERIALS WEIFANG LTD