Inverted contact type optical exposure photoetching equipment and exposure method

Abstract

The invention relates to the technical field of contact type exposure photoetching equipment, provides inverted contact type optical exposure photoetching equipment and an exposure method and can achieve the experimental effects of uniform light emission, high efficiency, adjustable substrate height and controllable exposure time, reduces the wear of a photolithography mask. The equipment comprises a horizontally arranged substrate, wherein an edge of a lower end of the substrate is connected with an optical platform through a plurality of detachably mounted rod frames, an optical platform isprovided with a power supply, an ultraviolet light source device and a time relay, the ultraviolet light source device is connected with the power supply and the time relay through wires, the middle of a top end of the substrate is provided with containing grooves which shrink inwards in sequence from top to bottom, the optical platform is horizontally arranged and is used for keeping the photoetching equipment horizontally placed and fixing the position of the photoetching equipment, and the time relay is used for controlling the exposure time according to different conditions. The equipmentis advantaged in that the height and exposure time of the substrate can be adjusted according to different conditions, and the required experimental effect is achieved.

Description

technical field [0001] The invention relates to the technical field of contact-type exposure lithography equipment, in particular to an inverted contact-type optical exposure lithography equipment and an exposure method. Background technique [0002] Nowadays, with the development of semiconductor and integrated circuit manufacturing industries, photolithography technology has gradually become the key to integrated circuit manufacturing. In a broad sense, photolithography is the use of optical and chemical reaction principles in the manufacture of semiconductors and integrated circuits to copy circuit structures such as metal electrodes and semiconductor components onto substrates (such as metal layers, semiconductor layers, and dielectric materials). Material layer), the process technology to form the desired pattern. [0003] Currently, the technologies mainly used for structural pattern processing include: proximity exposure lithography, projection exposure lithography, ...

AI Technical Summary

Problems solved by technology

However, projection exposure equipment has a complex structure and high equipment cost, and is rarely used in small-batch device structure processing.

[0007] Electron beam exposure (EBL) technology and laser direct writing technology have become the most commonly used technical means for ultra-micro-nano processing, but there are still great obstacles to its commercial application. The main reasons are: first, the equipment is expensive; Direct writing is used for fine structure processing, the processing efficiency is very low, and it is difficult to realize the manufacture of large-area structure graphics

Electron beam direct writing lithography technology cannot meet the requirements of high efficiency, low cost and large-area micro-nano structure processing, thus greatly reducing its industrial application value, and it cannot be applied to large-scale industrial mass production

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