High-performance tantalum disulfide two-dimensional layered film as well as preparation method and application thereof

A two-dimensional layered, tantalum disulfide technology, applied in the field of separation membranes, can solve problems such as environmental pollution, complex processes, and a large number of organic waste liquids, and achieve the effects of strong controllability, good repeatability, and high water flux

Inactive Publication Date: 2020-07-31
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process of the above method is complicated, and a large amount of organic solvent is used, and a large amount

Method used

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  • High-performance tantalum disulfide two-dimensional layered film as well as preparation method and application thereof
  • High-performance tantalum disulfide two-dimensional layered film as well as preparation method and application thereof
  • High-performance tantalum disulfide two-dimensional layered film as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0026] Example 1

[0027] A high-performance TaS 2 The preparation method of a two-dimensional layered film includes the following steps:

[0028] Step 1. Take the tantalum powder and sulfur powder and mix them evenly at a molar ratio of 1:2, and add a small amount of iodine (the amount added is 3.5 mg / cm based on the volume of the quartz tube 3 ), in low vacuum ( -3 Torr) is sealed in a quartz tube and placed in a muffle furnace. Slowly heat up to 900°C at a heating rate of 50°C / h, after holding for 24h, quenching to obtain high purity 1T phase TaS 2 Crystal, with CCl 4 And CS 2 Repeat washing 3 times successively to remove unreacted impurities.

[0029] Step 2. In the glove box, take 30 mg of TaS prepared in step 1 2 The crystals are put into a stainless steel reaction kettle, and then 1 mL of n-butyl lithium n-hexane solution with a concentration of 1.6 mol / L is added and sealed. The lithium intercalation reaction was carried out at 100℃ for 2h, and the product was repeatedly was...

Example Embodiment

[0035] Example 2

[0036] A high-performance TaS 2 The preparation method of a two-dimensional layered film includes the following steps:

[0037] Step 1. Take tantalum powder and sulfur powder at a molar ratio of 1:2 and mix thoroughly, and add a small amount of iodine (the amount added is calculated as 4mg / cm based on the volume of the quartz tube 3 ), in low vacuum ( -3 Torr) is sealed in a quartz tube and placed in a muffle furnace. Slowly heat up to 900°C at a heating rate of 30°C / h, after holding for 72h, quenching to obtain high purity 1T phase TaS 2 Crystal, with CCl 4 And CS 2 Repeated washing 3 times in sequence to remove unreacted impurities.

[0038] Step 2. In the glove box, take 50 mg of TaS prepared in step 1 2 The crystals are put into a stainless steel reaction kettle, and then 1 mL of n-butyl lithium n-hexane solution with a concentration of 1.6 mol / L is added and sealed. Lithium intercalation reaction was carried out at 60℃ for 12h, and the product was washed 5 ti...

Example Embodiment

[0042] Example 3

[0043] A high-performance TaS 2 The preparation method of a two-dimensional layered film includes the following steps:

[0044] Step 1. Take tantalum powder and sulphur powder at a molar ratio of 1:2 and mix thoroughly, and add a small amount of iodine (the amount added is calculated as 2mg / cm based on the volume of the quartz tube 3 ), in low vacuum ( -3 Torr) is sealed in a quartz tube and placed in a muffle furnace. Slowly heat up to 900°C at a heating rate of 45°C / h, after holding for 48 hours, quenching to obtain high purity 1T phase TaS 2 Crystal, with CCl 4 And CS 2 Repeat washing 5 times successively to remove unreacted impurities.

[0045] Step 2. In the glove box, take 40 mg of TaS prepared in step 1 2 The crystals are put into a stainless steel reaction kettle, and then 1 mL of n-butyl lithium n-hexane solution with a concentration of 1.6 mol / L is added and sealed. Lithium intercalation reaction was carried out at 150℃ for 1h, and the product was washed...

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Abstract

The invention discloses a high-performance tantalum disulfide two-dimensional layered film as well as a preparation method and application thereof. The preparation method comprises the following steps: preparing a LixTaS2 crystal from a 1T-phase TaS2 crystal through a lithium intercalation reaction, carrying out ultrasonic dispersion on the LixTaS2 crystal to obtain a TaS2 nanosheet dispersion liquid, and finally depositing the dispersion liquid on a porous carrier to obtain the TaS2 two-dimensional layered film. The TaS2 two-dimensional layered film disclosed by the invention can be fixed ina separation device so as to separate nano impurities with different sizes and properties in water, is high in separation efficiency, high in water flux and good in stability, and has a wide application prospect.

Description

technical field [0001] The present invention relates to a kind of high-performance TaS 2 The two-dimensional layered membrane and its preparation method and application belong to the technical field of separation membrane. Background technique [0002] The continuous development and innovation of global science and technology and the rapid development of industrial economy inevitably lead to the rapid aggravation of water pollution. The problem of high-efficiency, energy-saving and environmental protection to deal with water pollution has attracted widespread attention. Membrane separation technology is an efficient and energy-saving chemical separation method, and is considered to be an important means to deal with water resource crisis and sewage treatment. Traditional membrane materials have disadvantages such as poor stability, low mechanical strength, and weak separation performance, while two-dimensional ultra-thin nanomaterials have unique properties and functions du...

Claims

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Application Information

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IPC IPC(8): C01G35/00
CPCC01G35/00C01P2004/04C01P2004/03C01P2002/84
Inventor 冉瑾黄强吴玉莹张朋朋
Owner HEFEI UNIV OF TECH
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