Back contact solar cell module and preparation method thereof
A solar cell and back contact technology, applied in electrical components, circuits, photovoltaic power generation, etc., can solve problems such as battery series resistance rise, hidden cracks, silicon wafer warping and unevenness, and achieve the effect of simplifying the manufacturing process
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Embodiment 1
[0049] see image 3 , image 3 It is the small battery sheet arranged after the full back contact solar cell sheet in Example 1 is cut. The present invention provides a back-contact solar cell module, including several small cells and conductive strips 7, wherein, the back of each small cell is tiled with p+ doped regions 2 and n+ doped regions 2 and n+ doped regions staggered along its width direction. In the impurity region 3, a positive fine grid line (positive electrode 21) in contact with it is printed on the p+ doped region 2, a negative fine grid line (negative electrode 31) in contact with it is printed on the n+ doped region 3, and a positive fine grid line is printed on the n+ doped region 3. (Positive electrode 21) and the length of negative electrode fine grid line (negative electrode 31) are infinitely close to the width of small cell sheet; Please refer to Figure 4 , the conductive strip 7 includes a substrate 71 and a conductive pattern 72 disposed on the sub...
Embodiment 2
[0068] see Figure 8 , the difference from Example 1 is that in this example, four small back-contacted solar cells such as Figure 6 The arrangement shown, that is, the n+ doped regions 3 and p+ doped regions 2 on two adjacent small cells are arranged alternately and correspondingly. At this time, the direction of half of the back-contacted solar cells is opposite to that of the original back-contacted solar cells. On the back of the small back contact solar cell, there are only silver grid lines forming ohmic contacts with the strip-shaped n+ doped region 3 and the p+ doped region 2, and there is no respectively collecting the strip-shaped n+ doped region 3 and the p+ doped region 2 current busbar.
[0069] see Figure 7, the conductive strip 7 in this embodiment is printed onto the substrate 71 by conductive glue to form a conductive pattern 72, and the conductive glue is silver metal particles wrapped with epoxy resin as an adhesive. The shape of the conductive pattern ...
Embodiment 3
[0071] Unlike Example 1, see Figure 9 , the p+ doped region 2 and the n+ doped region 3 on the n-type single crystal silicon substrate 1 present different local width and narrow shapes, which can be specifically understood as: the n+ doped region 3 is strip-shaped, including wide rectangular strips arranged alternately and a narrow rectangular strip; the p+ doped region 2 is filled between two adjacent n+ doped regions 3, wherein the length of the n+ doped region 2 is 156.75mm, and the width W1 of the narrow rectangular strip in the n+ doped region 2= 9.8mm, the width of the wide rectangular bar W11=12.7mm, the length of the wide rectangular bar W6=W7=W8=13.8mm, of course, due to the different cutting positions, the lengths of W5 and W9 vary with the cutting, but it is best to W5 and W9 are set at the same length, in this embodiment W5=W19=6.9mm. The p+ doped region 3 filled between two adjacent n+ doped regions 3 has a length of 156.75 mm. It can be understood that it is al...
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Abstract
Description
Claims
Application Information
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