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Preparation method of multi-wavelength laser device

A technology of multi-wavelength lasers and equipment, applied in lasers, laser components, semiconductor lasers, etc., can solve the problems of uncontrollable wavelengths and affecting crystal quality, so as to achieve controllable wavelengths of light, improve luminous efficiency, and good crystal quality Effect

Active Publication Date: 2020-07-31
潍坊华光光电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when the traditional process grows and prepares multi-quantum wells with multiple wavelengths, because the materials of each quantum well are different, when they are superimposed on each other, stress will be generated due to the difference in the material of the substrate, which will affect the quality of the crystal and make the emitted wavelength uncontrollable.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] A method for preparing a multi-wavelength laser, comprising the steps of:

[0034] a) Put the GaAs substrate into the growth chamber of the MOCVD equipment, 2 Bake at 750±20°C under ambient conditions, and add AsH during baking 3 , remove water and oxygen on the surface of the GaAs substrate, and complete the heat treatment of the GaAs substrate surface;

[0035] b) Lower the temperature in the growth chamber of the MOCVD equipment to 700±20°C, and feed TMGa and AsH 3 , growing a GaAs buffer layer on a GaAs substrate;

[0036]c) Raise the temperature in the growth chamber of the MOCVD equipment to 750±20°C, and feed TMGa, TMAl and AsH 3 , growing n-type Al on the GaAs buffer layer x Ga 1-x As the lower restriction layer;

[0037] d) Reduce the temperature in the growth chamber of the MOCVD equipment to 700±20°C, and feed TMGa, TMAl and AsH 3 , in n-type Al x Ga 1-x Growth of Al on the lower confinement layer of As x Ga 1-x As lower waveguide layer;

[0038] ...

Embodiment 1

[0052] The baking time in step a) is 30 minutes.

Embodiment 2

[0054] The thickness of the GaAs buffer layer in step b) is 100-500nm, and the doping concentration in the growth chamber of the MOCVD equipment is 1E17-5E18 atoms / cm when growing the GaAs buffer layer 3 . Particularly preferably, the thickness of the GaAs buffer layer is 200nm, and the doping concentration in the growth chamber of the MOCVD equipment is 1E18 atoms / cm when growing the GaAs buffer layer 3 .

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PUM

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Abstract

The invention discloses a preparation method of a multi-wavelength laser device. According to the method, a composite wavelength multi-quantum well structure is prepared in a primary growth process, so that light output of composite wavelength can be generated without bonding a multi-quantum well light-emitting structure or device of single wavelength, reflection of light by a bonding metal layerdoes not exist, light efficiency reducing caused by the structure can be eliminated, and the light-emitting efficiency is improved in application of an LD device; the crystal lattice of an AlGaAs or AlGaInP material is matched with the crystal lattice constant of a GaAs substrate material, so that a stress-free waveguide layer has no stress after growth, the stress generated during the growth of an AlGaInAs first quantum well light-emitting region can be counteracted, and the stress generated during the continuous growth of a GaAsP second quantum well light-emitting region on the stress-free waveguide layer can be counteracted; the crystal quality of the stress-free AlGaInAs first quantum well and the GaAsP second quantum well is good, and the wavelength of light emitted by the stress-freeAlGaInAs first quantum well and the GaAsP second quantum well is controllable; and the recombination probability of electrons and holes is increased, and the luminous efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of laser manufacturing, in particular to a method for preparing a multi-wavelength laser. Background technique [0002] In order to further increase the communication capacity, the modern optical fiber WDM communication system is developing towards more and more channels. Multi-wavelength lasers can provide the required light sources for multiple channels at the same time, making the design of the optical transmitter more compact and economical, so they are very important in dense wavelength division multiplexing systems. At the same time, multi-wavelength light sources with excellent performance are also of great application value in the fields of laser ranging, spectral analysis and distributed optical fiber sensing. Therefore, the development of multi-wavelength lasers is undoubtedly of great significance. [0003] In the prior art, multiple single-wavelength lasers are generally used to manufacture opt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/343
CPCH01S5/34353H01S5/3436
Inventor 李志虎朱振张新郑兆河徐现刚
Owner 潍坊华光光电子有限公司