Temperature control method and system, semiconductor device

Abstract

The present invention provides a temperature control method and system, and semiconductor equipment. The method includes the following steps: S1, use a heating device to heat the workpiece to be processed, and adjust the output power of the heating device according to a preset power adjustment rule during the heating process , until the temperature of the processed workpiece reaches the preset first target value, wherein the first power adjustment rule is used to control the output power of the heating device to increase as the temperature of the processed workpiece increases; S2, using the heating device to continue to The processed workpiece is heated, and the temperature value of the processed workpiece is detected in real time during the heating process, and the output power of the heating device is adjusted according to the temperature value, so that the temperature of the processed workpiece reaches a preset target value. The technical solution of the temperature control method and system provided by the present invention can reduce the fluctuation of heating power and effectively reduce the occurrence of broken disks on the basis of ensuring the heating rate.

Description

technical field [0001] The present invention relates to the technical field of semiconductor processing, and in particular, to a temperature control method and system, and semiconductor equipment. Background technique [0002] In the manufacturing process of LEDs such as blue light, white light, etc., gallium nitride (GaN) is directly epitaxially grown on a sapphire substrate, and there has always been a problem of lattice mismatch and thermal mismatch. Since the aluminum nitride (AlN) material has the same lattice structure as GaN, and also has a strong degree of matching with the lattice of the sapphire material, AlN is used as a buffer layer and placed between the sapphire substrate and GaN. There is a great improvement in reducing epitaxial defects and improving epitaxial quality. [0003] At present, an aluminum nitride sputtering equipment is usually used to deposit an aluminum nitride film on a sapphire substrate by physical vapor deposition (Physical VaporDeposition...

Images