Integratable MEMS oscillator circuit

Abstract

The invention discloses an integratable MEMS oscillator circuit, which comprises an integrated multistage signal amplification module used for carrying out multistage amplification on an input signal,wherein the last-stage signal amplification module of the multistage signal amplification module is used for outputting the signal, the output signal is connected to the input end of a high-frequencydevice, and the input signal is connected to the output end of the high-frequency device; the transimpedance amplifier in the first-stage signal amplification module adopts a relatively low bandwidthto obtain a relatively large gain, the lagged phase shift amount of the transimpedance amplifier is compensated by providing an advanced phase through an active phase shifter arranged behind the transimpedance amplifier, and meanwhile, the active phase shifter can also provide an additional gain. By adopting a plurality of power supplies and a plurality of ground architectures among the signal amplification modules of the multi-stage signal amplification module, between the modules and between the modules and a test buffer (test circuit) and achieving cascading through blocking capacitors, the multistage signal amplification module has the advantages of high stability, high gain, low power consumption, better safety, simplicity and practicability.

Description

technical field [0001] The disclosure belongs to the technical field of high-frequency drive circuits and special-purpose integrated circuits (ASICs), and relates to an integratable MEMS oscillator circuit. Background technique [0002] At present, the radio frequency transceiver of 5G communication is developing in the direction of microwave and monolithic integration, and there is an urgent need for frequency reference sources that can provide multiple higher frequencies and can be monolithically integrated. [0003] Disk resonators using silicon-based MEMS technology are expected to achieve this, because multiple resonator arrays with different resonances can be fabricated on a silicon chip by designing different disk radii. By optimizing the MEMS process, the resonator array can be monolithically integrated with the driving circuit. The silicon-based MEMS disc resonator not only has a large quality factor (Q>10000), but also can output high-frequency frequencies in t...

AI Technical Summary

Problems solved by technology

[0004] In the existing drive circuit, in the architecture implementation of the board-level circuit (such as the circuit on the PCB), the drive circuit contains matching circuits such as L-C conversion, which is difficult to integrate because the on-chip inductor and on-chip capacitor occupy a lot of chip area, and Difficult to control, does not meet the requirements of low cost, high integration and miniaturization

[0005] In the existing integratable drive circuits, the same power supply is usually used for power supply and the same grounding point. The amplified voltage of the circuit is easily coupled to the input terminal through power lines and ground lines, which may easily cause circuit instability. The circuit gain is not high enough to drive a high frequency resonator

Therefore, a high-gain broadband high-frequency oscillator circuit with high integration and high stability has not yet been proposed. In addition, factors such as power consumption, noise, and safety need to be considered in the architecture design.

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