Method for processing three-dimensional contour of transparent material

A technology of transparent materials and three-dimensional contours, applied in metal processing equipment, manufacturing tools, glass manufacturing equipment, etc., can solve the problems of not achieving the separation effect and unseparated processing materials, so as to ensure absolute uniformity and avoid fine debris , Improve the effect of product yield

Active Publication Date: 2020-08-21
WUHAN HGLASER ENG CO LTD
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This separation method is suitable for machining contours with relatively simple trajectories, but for 3D contours with more complex trajectories, due to its higher requirements for the separation of lobes, the traditional partial separation method cannot achieve the separation effect, and cannot guarantee that the separation along the The three-dimensional profile is cracked, and it is easy to appear that there are cracks but the processing material is not separated, and other means are needed to achieve separation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for processing three-dimensional contour of transparent material
  • Method for processing three-dimensional contour of transparent material
  • Method for processing three-dimensional contour of transparent material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] Please also refer to figure 2 with image 3 , Figure 4 , the present embodiment provides a method for processing a three-dimensional contour of a silicon wafer. The transparent material workpiece 6 is a silicon wafer, and the method includes the following steps: using a laser 1 with a pulse width ranging from picoseconds to femtoseconds and a laser wavelength of 1550 nm; The focused laser beam 5 generated by the laser 1 performs laser modification layer by layer from the lower surface to the upper surface of the silicon wafer. The modified focus position is realized by the high-precision Z-axis lifting table 4 driving the microscopic objective lens 3. The corresponding movement trajectories of different focus positions It is calculated and generated by the control system 8 and realized by controlling the XY linear motor 7; by setting the laser cutting speed, PSO laser point spacing, and laser single pulse size to control the processing depth of each layer from S1 to ...

Embodiment 2

[0092] Please also refer to figure 2 with Figure 9 , Figure 10 , the present embodiment provides a method for machining three-dimensional contours of glass, wherein the transparent material workpiece 6 is made of glass, and the method includes the following steps: using a laser 1 with a pulse width ranging from picoseconds to femtoseconds and a laser wavelength of 1030-1080nm; The focused laser beam 5 generated by the laser 1 performs laser modification layer by layer from the lower surface to the upper surface of the glass. The modified focus position is realized by the high-precision Z-axis lifting table 4 driving the microscopic objective lens 3. The movement trajectory corresponding to different focus positions is determined by The control system 8 calculates and generates, and realizes by controlling the XY linear motor 7; by setting the laser cutting speed, PSO laser point spacing, and laser single pulse size to control the processing depth of each layer from G1 to G...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for processing a three-dimensional contour of a transparent material. The whole transparent material is processed according to a preset path through a laser beam, laser processing energy is continuously adjusted according to different processing depths, the Z axis height and a corresponding processing track are changed, and the three-dimensional contour of the transparent material is formed; after the three-dimensional contour of the transparent material is formed, a forming method is used for treatment, and the three-dimensional contour of the transparent material is separated from waste to be formed finally. The laser beam acts in the thickness direction of the whole transparent material, the transparent material is modified through ultra-short pulse width, the transparent material is formed and separated through a special treatment method, a crack-free damage-free workpiece is obtained, generation of small debris is avoided, and the product yield isimproved.

Description

technical field [0001] The invention relates to the technical field of laser processing, in particular to a method for three-dimensional contour processing of transparent materials. Background technique [0002] With the rapid development of electronic products, especially smart phones and tablet computers, etc. are developing towards thinner volume and lighter weight. These electronic products are inseparable from glass sheets. At present, the thickness of glass sheets on electronic products has been reduced from the original 1.1mm to 0.6-0.7mm, and the thickness of glass sheets on mobile phone screens has been reduced to 0.3mm or even lower. The thinner the glass sheet is, the more sensitive it is to the force, and the easier it is to be brittle after being impacted, which undoubtedly increases the difficulty of processing. As an important substrate material, silicon is widely used in the LED industry. Although it has the characteristics of good thermal conductivity and h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/38B23K26/402B23K26/064C03B33/09C03C15/00
CPCB23K26/38B23K26/402B23K26/064C03B33/091C03B33/09C03C15/00B23K2103/54Y02P40/57
Inventor 孙威朱周浩程伟库东峰王雪辉王建刚温彬
Owner WUHAN HGLASER ENG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap