Efficient P-type solar cell and photovoltaic module

A solar cell, high-efficiency technology, applied in photovoltaic power generation, electrical components, circuits, etc., can solve the problem of incompatibility of the surface integrity of the emitter

Inactive Publication Date: 2020-08-25
上饶捷泰新能源科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a high-efficiency P-type solar cell and photovoltaic module to solve ...

Method used

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  • Efficient P-type solar cell and photovoltaic module
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Embodiment approach

[0032] As a preferred implementation manner, the highly doped polysilicon layer 310 has a thickness ranging from 50 nanometers to 150 nanometers inclusive, such as any one of 50.0 nanometers, 100.2 nanometers or 150.0 nanometers.

[0033] In addition, the front passivation layer 320 and the back passivation layer 230 are silicon nitride layers, and the silicon nitride layer can simultaneously play anti-reflection and passivation functions, so that incident light can be better absorbed by solar cells. , improve power generation efficiency; furthermore, the thickness range of the front passivation layer 320 is 75 nanometers to 85 nanometers, such as any one of 75.0 nanometers, 80.0 nanometers or 85.0 nanometers, and the thickness range of the back passivation layer 230 is 70 nm to 90 nm, such as any of 70.0 nm, 80.0 nm or 90.0 nm, inclusive.

[0034] Also, the thickness of the N-type doped layer 220 is 50 nanometers to 150 nanometers inclusive, such as any one of 50.0 nanometers...

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Abstract

The invention discloses an efficient P-type solar cell. The efficient P-type solar cell comprises a light-facing surface epitaxial layer, P-type substrate silicon and a backlight surface epitaxial layer, wherein the light-facing surface epitaxial layer comprises a front passivation layer arranged in a non-metal region on the surface of the P-type substrate silicon, a highly doped polycrystalline silicon layer arranged in a metal region on the surface of the P-type substrate silicon, and a front surface electrode arranged on the surface of the highly doped polycrystalline silicon layer, whereinthe highly-doped polycrystalline silicon layer is a P-type semiconductor layer, and the doping concentration is higher than that of the P-type substrate silicon; the backlight surface epitaxial layercomprises a back tunneling oxide layer arranged on the surface of the P-type substrate silicon, an N-type doped layer arranged on the surface of the back tunneling oxide layer, a back surface electrode arranged on a metal region on the surface of the N-type doped layer, and a back surface passivation layer arranged on a non-metal region on the surface of the N-type doped layer. According to the invention, the surface passivation of the solar cell and the surface integrity of an emitter are both achieved. The invention also provides a photovoltaic module with the above advantages.

Description

technical field [0001] The invention relates to the field of photovoltaic new energy, in particular to a high-efficiency P-type solar cell and a photovoltaic module. Background technique [0002] High efficiency and low cost are the two most important directions of solar cell research. For crystalline silicon solar cells, with the improvement of crystalline silicon manufacturing technology, the bulk carrier lifetime of the substrate silicon wafer has been continuously improved, which is no longer a key factor restricting the improvement of cell efficiency. The passivation of the battery surface has more and more obvious influence on the conversion efficiency. In the production process of solar cells, the cost of substrate silicon wafers accounts for the highest proportion of the entire production cost. In order to reduce production costs, realize “grid parity” of photovoltaic electricity prices as soon as possible, and improve market competitiveness, the thinning of silicon...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0352H01L31/068
CPCH01L31/02167H01L31/035272H01L31/0682Y02E10/546
Inventor 钟潇白玉磐陈园付少剑
Owner 上饶捷泰新能源科技有限公司
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