Monolithic integrated solar-blind ultraviolet and near-infrared double-color photoelectric detector and manufacturing method thereof

A technology of photodetector and monolithic integration, which is applied in photometry, photovoltaic power generation, circuits, etc. using electric radiation detectors, and can solve the problems of not being able to obtain higher sensitivity at the two-color end

Active Publication Date: 2020-08-25
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0005] The purpose of the present invention is to provide a monolithic integrated solar-blind ultraviolet and near-infrared two-color photodetector and its manufacturing method, to

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  • Monolithic integrated solar-blind ultraviolet and near-infrared double-color photoelectric detector and manufacturing method thereof
  • Monolithic integrated solar-blind ultraviolet and near-infrared double-color photoelectric detector and manufacturing method thereof
  • Monolithic integrated solar-blind ultraviolet and near-infrared double-color photoelectric detector and manufacturing method thereof

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specific Embodiment approach 4

[0066] The present invention also provides a method for manufacturing a single-chip integrated sun-blind ultraviolet and near-infrared two-color photodetector, and a schematic flow chart of a specific implementation thereof is as follows image 3 What is shown is referred to as the fourth specific embodiment, including:

[0067] Step S101 : On the AlN template 100 , an AlGaN / AlN superlattice layer 200 , an AlGaN transition layer 300 and an n-type AlGaN layer 400 are sequentially arranged from bottom to top.

[0068] Furthermore, the AlN template 100, the AlGaN / AlN superlattice layer 200, the AlGaN transition layer 300, and the n-type AlGaN layer 400 (including the gradient doped n-type AlGaN layer 600 described below) Epitaxy was grown by metal-organic chemical vapor deposition.

[0069] Step S102 : disposing a conductive oxide nano-antenna 530 on the surface of the n-type AlGaN layer 400 .

[0070]Step S103: setting the first interdigital electrode 510 and the second interd...

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Abstract

The invention discloses a monolithic integrated solar-blind ultraviolet and near-infrared double-color photoelectric detector which sequentially comprises an AlN template, an AlGaN/AlN superlattice layer, an AlGaN transition layer, an n-type AlGaN layer, a conductive oxide nano antenna and metal interdigital electrodes from bottom to top, the metal interdigital electrodes comprise a first interdigital electrode and a second interdigital electrode which are arranged in a crossed manner; and the conductive oxide nano antenna is arranged in the first interdigital electrode. On the basis of not influencing solar blind ultraviolet light detection, the near-infrared photoelectric conversion efficiency is high, the sensitivity is high, the device structure is simple, and the detection wavelengthtunability is good. The invention also provides a manufacturing method of the monolithic integrated solar blind ultraviolet and near infrared double-color photoelectric detector with the above advantages.

Description

technical field [0001] The invention relates to the technical field of semiconductor photodetectors, in particular to a single-chip integrated solar-blind ultraviolet and near-infrared dual-color photodetector and a manufacturing method thereof. Background technique [0002] In today's era of highly developed informatization, ultraviolet and infrared photoelectric detection materials and devices, as an important pillar of information acquisition, play an important role in national economic construction, national defense construction, and people's daily life. Infrared detection has good environmental adaptability, good concealment, and strong camouflage recognition ability, and ultraviolet detection, especially solar-blind ultraviolet detection, has strong anti-interference ability and good confidentiality. With the continuous expansion of application scenarios, people are gradually looking for a device that can detect solar-blind ultraviolet and near-infrared light at the sa...

Claims

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Application Information

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IPC IPC(8): H01L31/108H01L31/0224H01L31/0304H01L31/18G01J1/42
CPCG01J1/42H01L31/022408H01L31/03048H01L31/1085H01L31/1848Y02E10/544Y02P70/50
Inventor 陈一仁宋航张志伟蒋红缪国庆李志明
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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