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Semiconductor nuclear radiation detector and preparation method and application thereof

A nuclear radiation detector and semiconductor technology, applied in the field of nuclear radiation detection, can solve problems such as insurmountable application development, and achieve the effects of improving effective charge collection efficiency, excellent thermal stability, and low detection limit

Pending Publication Date: 2020-08-28
EAST CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The wide-bandgap semiconductor nuclear radiation detectors represented by CdTeZn and T1Br are currently under development and becoming mature. Years of research have enabled this type of detector to meet the performance requirements of high resolution and high detection efficiency, but the Te group in CdTeZn Segregation and ion polarization in TlBr have always been an insurmountable problem restricting their application development

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  • Semiconductor nuclear radiation detector and preparation method and application thereof
  • Semiconductor nuclear radiation detector and preparation method and application thereof
  • Semiconductor nuclear radiation detector and preparation method and application thereof

Examples

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Embodiment 1

[0030] as attached figure 1 and 2 As shown, this embodiment provides a method for preparing a completely symmetrical semiconductor nuclear radiation detector, which includes the following steps:

[0031] S1. Select CsPbBr 3 A single crystal is used as the substrate 1, and the surface of the substrate 1 is chemically etched with a bromomethanol solution with a concentration of 5% by mass to remove the oxide layer on the surface of the substrate 1 to obtain a chemically etched substrate.

[0032] S2. Perform passivation treatment on one side of the above chemically etched substrate with a hydrobromic acid solution with a pH value of 4.5 to form a passivation layer 2 .

[0033] S3, using an etching method to prepare a structural mask, that is, using a plasma etching method in the prior art to etch the central part of the above-mentioned passivation layer 2 to remove the central part of the above-mentioned passivation layer 2 to form an etched mask. eclipse area.

[0034] S4. ...

Embodiment 2

[0038] as attached figure 1 and 3 As shown, this embodiment provides a method for preparing a semisymmetric semiconductor nuclear radiation detector, which includes the following steps:

[0039] S1. Select CsPbBr 3 A single crystal is used as the substrate 1, and the surface of the substrate 1 is chemically etched with a bromomethanol solution with a concentration of 5% by mass to remove the oxide layer on the surface of the substrate 1 to obtain a chemically etched substrate.

[0040] S2. Perform passivation treatment on one side of the above chemically etched substrate with a hydrobromic acid solution with a pH value of 4.5 to form a passivation layer 2 .

[0041] S3, using an etching method to prepare a structural mask, that is, using a plasma etching method in the prior art to etch the central part of the above-mentioned passivation layer 2 to remove the central part of the above-mentioned passivation layer 2 to form an etched mask. eclipse area.

[0042] S4. Deposit a...

Embodiment 3

[0046] as attached figure 1 As shown, this embodiment provides a method for preparing a completely symmetrical semiconductor nuclear radiation detector, which includes the following steps:

[0047] S1. Select CsPbBr 3 A single crystal is used as a substrate, and the surface of the substrate is chemically etched with a bromomethanol solution with a concentration of 3% by mass to remove the oxide layer on the surface of the substrate to obtain a chemically etched substrate.

[0048] S2, using a hydrobromic acid solution with a pH value of 4 to perform passivation treatment on one side of the above chemically etched substrate to form a passivation layer.

[0049] S3, using an etching method to prepare a structural mask, that is, using a plasma etching method in the prior art to etch the central part of the above-mentioned passivation layer to remove the central part of the above-mentioned passivation layer to form an etching region .

[0050] S4. Deposit a 30nm-thick Ti electr...

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Abstract

The invention is applicable to the technical field of nuclear radiation detection, and provides a semiconductor nuclear radiation detector, and a preparation method and application thereof. The preparation method comprises the following steps: carrying out chemical corrosion treatment on the surface of a CsPbBr3 single crystal substrate by using a bromine methanol solution; performing passivationtreatment on one surface of the substrate subjected to chemical corrosion treatment by using a hydrobromic acid solution to form a passivation layer; etching the central part of the passivation layerto form an etching region; sequentially depositing a first inner-layer metal electrode, a first middle-layer metal electrode and a first outer-layer metal electrode on the etching region; sequentiallydepositing a second inner-layer metal electrode, a second middle-layer metal electrode and a second outer-layer metal electrode on one surface, far away from the etching region, of the substrate to obtain a semi-finished product; and annealing the semi-finished product in a protective atmosphere to obtain the semiconductor nuclear radiation detector. The semiconductor nuclear radiation detector can perform room temperature detection and nondestructive detection, and has the advantages of low detection limit, convenience in carrying and the like.

Description

technical field [0001] The invention belongs to the technical field of nuclear radiation detection, in particular to a semiconductor nuclear radiation detector and its preparation method and application. Background technique [0002] Energy, especially new energy, as an indispensable driving force for the development of modern civilized society, has always been a research hotspot and research difficulty in the scientific and industrial circles. Among them, nuclear energy, as the most efficient and abundant clean energy in today's society, has become one of the primary choices for future energy due to its abundant energy storage. However, the huge destructive power of nuclear energy has also made ordinary people "turn pale when talking about nuclear power" and "avoid nuclear power". Therefore, how to do a good job in nuclear testing and nuclear testing is an indispensable prerequisite for the peaceful development of nuclear energy. Among them, nuclear detection technology i...

Claims

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Application Information

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IPC IPC(8): G01T1/24H01L31/115H01L31/18
CPCG01T1/241H01L31/115H01L31/18Y02P70/50
Inventor 张明智王可邹继军朱志甫邓文娟田芳
Owner EAST CHINA UNIV OF TECH
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