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BiOCl two-dimensional material and preparation method of BiOCl photoelectric detector

A technology of photodetectors and two-dimensional materials, applied in chemical instruments and methods, circuits, electrical components, etc., can solve problems that hinder the practical application of BiOCl photodetectors, complex preparation methods, and impurities, and achieve market promotion value High, simple preparation process, low cost effect

Inactive Publication Date: 2020-09-01
CHINA UNIV OF GEOSCIENCES (WUHAN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation methods of BiOCl materials in existing BiOCl photodetectors are complex and have impurities, which hinder the practical application of BiOCl photodetectors.

Method used

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  • BiOCl two-dimensional material and preparation method of BiOCl photoelectric detector
  • BiOCl two-dimensional material and preparation method of BiOCl photoelectric detector
  • BiOCl two-dimensional material and preparation method of BiOCl photoelectric detector

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preparation example Construction

[0025] Please refer to Figure 1-2 , the embodiment of the present invention provides a method for preparing a BiOCl two-dimensional material, which mainly includes the following steps:

[0026] S1. Ultrasonic cleaning the substrate with acetone, absolute ethanol and deionized water in sequence for future use; wherein, the substrate is a silicon wafer, and after cutting the silicon wafer into a size of 10×10 mm, successively clean it with acetone, deionized water, Water ethanol and deionized water carry out ultrasonic cleaning to the described silicon chip after cutting;

[0027] S2. Select BiCl 3 As the source of bismuth, it will contain 0.2~1.0g BiCl 3 The ark is placed in the center of the tube furnace, and the ark containing the substrate is placed in the tube furnace at a position 17 to 25 cm away from the bismuth source, and a mixture of argon and oxygen is passed into the tube furnace. gas, raise the furnace temperature to 700-1000°C to heat-treat the bismuth source ...

Embodiment 1

[0029] S1, the substrate is ultrasonically cleaned with acetone, absolute ethanol and deionized water in sequence, for future use;

[0030] S2. Select BiCl 3 As the bismuth source, there will be 0.4g BiCl 3 The ark is placed in the center of the tube furnace, and an ark containing the substrate is placed at a position 18 cm away from the bismuth source in the tube furnace, and a mixture of argon and oxygen is passed into the tube furnace. The temperature of the furnace was raised to 750° C. to heat the bismuth source for 35 minutes, and then naturally cooled to room temperature to obtain a BiOCl two-dimensional material grown on the substrate.

Embodiment 2

[0032] S1, the substrate is ultrasonically cleaned with acetone, absolute ethanol and deionized water in sequence, for future use;

[0033] S2. Select BiCl 3 As the bismuth source, there will be 0.6g BiCl 3 The ark is placed in the center of the tube furnace, and an ark containing the substrate is placed in the tube furnace at a position 20 cm away from the bismuth source, and a mixture of argon and oxygen is passed into the tube furnace. The temperature of the furnace was raised to 800° C. to heat the bismuth source for 30 minutes, and then naturally cooled to room temperature to obtain a BiOCl two-dimensional material grown on the substrate.

[0034] The crystal structure of the BiOCl two-dimensional material obtained in this example was characterized, and the XRD test results were as follows: image 3 shown. From image 3 It can be seen that according to the PDF card NO.06-0249, the obtained BiOCl two-dimensional materials are at ~12°, ~24°, ~26°, ~32°, ~33°, ~35°, ~36°...

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Abstract

The invention belongs to the technical field of semiconductor films, and relates to a preparation method of a BiOCl two-dimensional material. The method comprises the following steps of: selecting bismuth chloride as a bismuth source; placing a substrate at a certain position away from the bismuth source; heating the bismuth source in a mixed gas of argon and oxygen; and cooling to room temperature to obtain the BiOCl two-dimensional material. According to the preparation method of the invention, a chemical vapor deposition method is adopted as the preparation method, the preparation method issimple in process and low in cost, and can obtain a single-phase BiOCl two-dimensional material.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin films, and in particular relates to a preparation method of a BiOCl two-dimensional material and a BiOCl photodetector. Background technique [0002] Photodetectors can take advantage of the interaction between light and matter to convert light signals into measurable electrical signals. It is widely used in agriculture, industry, military and other fields. Such as: video imaging, optical communication, environmental monitoring, space detection, etc. [0003] BiOCl has been extensively studied due to its favorable band structure and property of absorbing sunlight for photoelectric conversion. So far, some BiOCl nanomaterials, such as nanospheres and nanosheets, have been widely synthesized for optoelectronic devices. Its large bandgap (3.0-3.5eV) makes BiOCl a promising material for UV photodetectors. However, the preparation methods of BiOCl materials in the existing BiOCl photodet...

Claims

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Application Information

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IPC IPC(8): C01G29/00H01L31/032H01L31/09H01L31/18
CPCC01G29/00C01P2004/20H01L31/032H01L31/09H01L31/18Y02P70/50
Inventor 孙剑曾洁陈泽群何开华
Owner CHINA UNIV OF GEOSCIENCES (WUHAN)
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