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Lithium tantalate micro-patterning method based on reactive ion etching

A technology of reactive ion etching and lithium tantalate, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of large stress and easy damage of patterns, and achieve easy fabrication and easy magnetron sputtering coating The effect of simple process and photolithography process

Pending Publication Date: 2020-09-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a lithium tantalate micropatterning method based on reactive ion etching to solve the problem that the pattern is easily destroyed due to the large stress between the materials of the above layers

Method used

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  • Lithium tantalate micro-patterning method based on reactive ion etching
  • Lithium tantalate micro-patterning method based on reactive ion etching
  • Lithium tantalate micro-patterning method based on reactive ion etching

Examples

Experimental program
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Effect test

Embodiment 1

[0042] A lithium tantalate micropatterning method based on reactive ion etching, comprising the steps of:

[0043] (1) cleaning the lithium tantalate substrate 1;

[0044] (2) Coating photoresist 2 on lithium tantalate substrate 1, exposing and developing to obtain patterned photoresist 2;

[0045] (3) Ti metal mask 3 and Cr metal mask 4 are sequentially plated with magnetron sputtering method on the photoresist 2 surface, the thickness of Ti metal mask 3 is 100nm, and the thickness of Cr metal mask 4 is 300nm;

[0046](4) Place the sample in step (3) in an acetone solution by stripping method to remove photoresist 2 and redundant metal parts, to obtain a patterned metal mask;

[0047] (5) Using CHF3 plasma to carry out 3min reactive ion etching on the lithium tantalate substrate 1 prepared with the metal mask pattern, the flow rate of the etching of the fluorine-based plasma is 50 sccm;

[0048] (6) Argon plasma is used to physically bombard the lithium tantalate substrate ...

Embodiment 2

[0053] On the basis of embodiment 1, in step (2), the thickness of Ti metal mask 3 is 20nm, and the thickness of Cr metal mask 4 is 50nm; Adopt CHF in step (5) The flow rate ratio with Ar plasma is 50sccm: 50sccm is carried out 1min reactive ion etching to the lithium tantalate substrate 1 that has prepared metal mask pattern; In step (6), adopt argon plasma to carry out 30s physical bombardment to lithium tantalate substrate 1, the flow rate during Ar physical bombardment is 50sccm, Repeat once, and the total time is 1.5 min; the rest of the steps are the same as in Example 1.

[0054] In this example, a trench pattern with a depth of 400 nm was produced.

Embodiment 3

[0056] On the basis of embodiment 1, on the basis of embodiment 1, the thickness of Ti metal mask 3 is 200nm in step (2), and the thickness of Cr metal mask 4 is 500nm; Adopt CF4 and Ar in step (5) The flow rate ratio of the plasma is 50sccm: 50sccm carries out 5min reactive ion etching to the lithium tantalate substrate 1 of metal mask pattern; Adopt argon plasma to carry out 2min physical bombardment to lithium tantalate substrate 1 in step (6), Ar The flow rate during the physical bombardment was 50 sccm, repeated four times, and the total time was 28 minutes; the rest of the steps were the same as in Example 1.

[0057] In this example, a groove pattern with a depth of 1.3 μm was produced.

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Abstract

The invention discloses a lithium tantalate micro-patterning method based on reactive ion etching, belongs to the technical field of semiconductors, and particularly relates to lithium tantalate crystal micro-patterning, so as to solve the problem that patterns are easy to damage due to large stress among materials of each layer, and the method comprises the following steps: sequentially plating aTi metal mask and a Cr metal mask on the surface of photoresist; preparing a metal mask pattern on the surface of the lithium tantalate substrate by using a stripping method; carrying out reactive ion etching on the lithium tantalate substrate with the prepared metal mask pattern by adopting fluorine-based plasma; carrying out physical bombardment on the lithium tantalate substrate for 30 secondsto 2 minutes by adopting argon plasma so as to remove high-boiling-point non-volatile substances such as lithium fluoride and fluotantalate formed on the surface of the sample; and repeating the etching step until the micro-patterning of the lithium tantalate substrate is completed. According to the method, the micron-scale depth pattern is manufactured on the lithium tantalate substrate, the purposes that the inclination angle of the side wall of the pattern is large and the surface of the groove is smooth are achieved, a high selection ratio of a metal mask is obtained, and the etching depth is large.

Description

technical field [0001] The invention relates to a lithium tantalate micropatterning method based on reactive ion etching, which belongs to the technical field of semiconductors, and in particular relates to a lithium tantalate crystal micropatterning method. Background technique [0002] Lithium tantalate (LiTaO3) is an important ferroelectric material. Lithium tantalate crystal has been used in communications, military, electric power, It plays an important role in astronomy, sensors and other fields, and has gradually become the content of research by researchers at home and abroad. In the process of using this crystal to manufacture various optoelectronic and pyroelectric devices, it needs to be micropatterned. To form surface patterns of various shapes, the micropatterning technology of lithium tantalate is particularly important. [0003] In the micropatterning process, reactive ion etching is the most critical step. Traditional etching methods include wet etching and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01L21/033H01L21/027
CPCH01L21/0274H01L21/0332H01L21/0337H01L21/31144H01L21/31122
Inventor 曹明才钟志亲罗文博李茂荣戴丽萍王姝娅
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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