Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of self-tracing grating standard substance capable of accurately shortening pitch value

A standard material and pitch shortening technology, applied in the direction of diffraction grating, optics, optical components, etc., can solve the problems of film thickness drift, long traceability chain, large uncertainty, etc., to achieve traceability, improve contrast, and not The effect of excellent certainty

Active Publication Date: 2020-09-11
TONGJI UNIV +1
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the preparation method of standard substances, traditional photolithography technology can prepare large-area grating standard substances, but its grating pitch is limited by the wavelength of visible light used in lithography, and its minimum pitch value is on the order of 200nm; electron beam etching technology The pitch of prepared grating standard materials can be in the scale of hundreds of nanometers to tens of nanometers, but limited by the single-field exposure area of ​​the etching equipment, multi-field splicing is usually used for small-pitch and large-area grating standard materials, which is difficult Meet the requirements of uniformity and traceability; multi-layer film grating technology can also prepare dozens of nanometer-scale standard substances, but due to the constraints of coating conditions in the preparation technology, the thickness of the film layer will drift with the increase in the number of coating layers. Usually the obtained grating small structural area
More importantly, although the pitch value of the standard substance prepared by the preparation method in the first category can be in the scale of hundreds of nanometers and tens of nanometers, because the preparation process does not have traceability, in order to ensure the traceability of the quantity value to the definition of the meter unit It needs to be calibrated by the measuring instruments of the national metrology institution, resulting in a long traceability chain and a large uncertainty. For example, VLSI Standards company’s standard material with a pitch value of 100nm (nominal pitch value 100nm±2nm), its uncertainty is 1nm

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of self-tracing grating standard substance capable of accurately shortening pitch value
  • Preparation method of self-tracing grating standard substance capable of accurately shortening pitch value
  • Preparation method of self-tracing grating standard substance capable of accurately shortening pitch value

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Such as Figure 6 As shown, this embodiment provides a method for preparing a self-traceable grating standard substance that accurately shortens the pitch value, including the following steps:

[0054] Obtaining the mask substrate S1: obtaining the mask substrate, the mask substrate is divided into a window area and a non-window area, the window area includes the first substrate, and the non-window area includes the film layer and the first substrate;

[0055] The window area is transparent to X-rays, and the non-window area is opaque to X-rays. The number of window areas is two. The two window areas have the same size and are symmetrically distributed, and are located in the central area of ​​the mask plate substrate.

[0056] The film thickness h of the mask plate substrate satisfies: 50nm≤h≤300nm, the surface roughness of the film layer is better than 0.3nm, and the maximum height of the surface profile of the film layer is lower than 2nm.

[0057] Mask preparation ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
surface roughnessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of a self-tracing grating standard substance capable of accurately shortening a pitch value, which is used for preparing a hundred-nanometer-scale and below small-pitch tracing standard substance on the basis of a laser convergence atomic deposition technology and a soft X-ray interference photoetching technology, and comprises the following steps of:(1) obtaining a mask substrate; (2) adopting a laser convergence atomic deposition technology to deposit and prepare a mask on the mask substrate; (3) obtaining a photoresist sample which comprises photoresist and a second underlayment, exposing and developing the photoresist by adopting the mask through a soft X-ray interference photoetching technology to obtain a photoresist grating structure; and (4) transferring the photoresist grating structure to the second underlayment to obtain the self-tracing grating standard substance. Compared with the prior art, the self-tracing grating standard substance prepared by the method has the advantages of high precision, traceability, accurate shortening of the pitch value and the like.

Description

technical field [0001] The invention relates to the field of nano-grating standard substances, in particular to a method for preparing self-traceable grating standard substances which can accurately shorten the pitch value. Background technique [0002] With the continuous advancement of nanotechnology, the feature size of devices has entered the nanometer level, the uncertainty in the manufacturing process has increased significantly, and the impact of processing errors on device performance is also increasing. Nanometrics is the basis for measuring and characterizing nanoscale devices. It plays an important role in the field of process control and quality management in the nanomanufacturing process. It is an unavoidable key science and technology in the fields of MEMS, ultra-precision machining, nanomedicine, and nanobiology. question. Nanometering is the primary prerequisite for realizing accurate and reliable measurements at the nanometer scale. The difficulty lies in n...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/18
CPCG02B5/1809G02B5/1857
Inventor 程鑫彬邓晓刘杰顾振杰李同保赵俊杨树敏吴衍青邰仁忠
Owner TONGJI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products