Organic electroluminescent device containing pyrene or azapyrene
An electroluminescence device and luminescence technology, applied in the field of semiconductors, can solve the problems of mismatching electron injection and transmission rates, weak injection and transmission characteristics, unfavorable device stability, etc., to improve hole injection and transmission performance, improve Effect of photoelectric performance and distribution balance
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Embodiment 1
[0091] Device Preparation Example 1: Carry out according to the following process:
[0092] a) use transparent glass as the substrate, on which coating thickness is 150nm ITO, as the anode layer, then respectively with deionized water, acetone, ethanol ultrasonic cleaning each 15 minutes, then process 2 minutes in the plasma cleaner;
[0093] b) On the washed first electrode layer, the hole injection layer HI1 obtained in the preparation of the above hole injection layer is evaporated by vacuum evaporation method, with a thickness of 10nm;
[0094] c) On the hole injection layer, a hole transport layer is evaporated by vacuum evaporation, the material of the hole transport layer is compound 1, and the thickness is 60nm;
[0095] d) Evaporating an electron blocking layer EB1 on the hole transport layer by vacuum evaporation with a thickness of 40nm;
[0096] e) On the electron blocking layer, evaporate the light-emitting layer material by vacuum evaporation, the host material ...
Embodiment 2-15
[0100] Device Example 2-15: proceed according to the process of Device Preparation Example 1, except that in step b), the hole injection layer 1 is replaced with any one of the hole injection layers 2-5; in step c), Replace the hole transport material with any one of compound 1, compound 2, compound 23, compound 37, and compound 66; in step d), replace the electron blocking layer material with any one of EB1 and compound 62, the specific device structure As in Table 2.
Embodiment 16
[0101] Device Example 16: according to the process of Device Preparation Example 1, the difference is that in step d), the film thickness of the electron blocking layer is 40nm; in step e), the host material is EMH-13, and the guest material is EMD-8 , and the mass ratio of EMH-13 and EMD-8 is 96:4, and the thickness is 40nm.
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Abstract
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