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Preparation method of double-layer porous oxide structure based on artificial synapse function

A porous oxide, artificial nerve technology, applied in biological neural network models, physical implementation, electrical components, etc., can solve the problems of difficult stability, limited application, random generation of conductive filaments, etc., to achieve the effect of alleviating volume expansion

Active Publication Date: 2022-03-15
BEIHANG UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

However, there are still many problems in terms of stability, reliability and further analysis of the mechanism.
For example, there are random generation and breakage of conductive filaments based on conductive filament devices, so stability is still a problem to be overcome, which limits its further application in artificial synapses

Method used

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  • Preparation method of double-layer porous oxide structure based on artificial synapse function
  • Preparation method of double-layer porous oxide structure based on artificial synapse function
  • Preparation method of double-layer porous oxide structure based on artificial synapse function

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Embodiment approach

[0039] Combining the above content of the invention and the attached Figure 1-5 , the embodiment of the present invention is described in detail below:

[0040] 1. Configure silicon oxide solution: first, configure mother liquor, configure solution A: use a pipette to take 1.6 mL of absolute ethanol and drop it into No. 1 beaker, and then drop 2 mL of tetraethyl silicate TEOS into into the No. 1 beaker, and then the concentration is 3×10 -3 mol / L, hydrochloric acid with a volume of 0.16mL was dropped into No. 1 beaker, put it into the rotor, and stirred at room temperature for 24 hours until the solution was evenly mixed; secondly, configure solution B: adjust the balance to the level, and then weigh the mass to be 0.3 Put the pore-forming agent CTAC of g into the No. 2 beaker, and then use a pipette to drop 8.88mL of absolute ethanol into the No. 2 beaker, and then use a pipette to take a concentration of 5.5×10 -2 mol / L alcohol with a volume of 0.64mL was dropped into the...

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Abstract

The preparation of a double-layer porous oxide structure based on the artificial synapse function of the present invention is composed of a top electrode, an oxide layer and a bottom electrode. The present invention has the following advantages: 1. A porous silicon oxide structure with a sponge-like structure is bionic; 2. A layer of ion-type / ion-doped porous oxide layer is grown on the surface of porous silicon oxide to form a double-layer porous oxide structure 3. The contact interface of the double-layer porous structure presents a structure in which small pores surround large pores. The structure not only exhibits excellent electrical performance, but also can simulate the basic functions of synapses, which provides a research path for the exploration of memristive mechanism and the construction of new synaptic devices. The memristor of the present invention has excellent electrical properties. The preparation method of the invention is simple, the performance is excellent, and it is widely used in the fields of high-density storage calculation and artificial intelligence, and provides a new way for exploring the working mechanism of the new brain-like nerve.

Description

technical field [0001] The invention relates to a method for preparing a double-layer porous oxide structure based on the function of artificial neural synapse. The double-layer porous oxide synaptic device has the functions of stability, multi-resistance, low energy consumption, non-volatile, integrated memory and storage functions The memristive characteristic of the invention belongs to the technical field of brain-inspired computing devices. Background technique [0002] The brain is one of the most complex networks in human nature, with 1011 neurons connected through 1015 synapses, forming an extremely complex network system. While performing massive information calculations, the human brain requires low power consumption and has a memory function. Based on the disadvantages of parallel storage and computation and high power consumption in current computers, developing a computer with brain-like learning and memory functions has become a research hotspot. Since the bi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G06N3/063
CPCG06N3/065H10N70/801H10N70/20H10N70/883H10N70/011
Inventor 黄安平高勤
Owner BEIHANG UNIV
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