Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Terahertz absorbing material with gradient aperture structure and preparation method thereof

A wave-absorbing material and terahertz technology, applied in the field of terahertz wave absorption, can solve problems such as the reduction of terahertz wave attenuation effect, the obstruction of terahertz wave incidence, and the reduction of absorption capacity, etc., and achieve strong broadband terahertz wave absorption characteristics, preparation Simple method, good bendable effect

Active Publication Date: 2021-06-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are two problems in this porous 3D graphene foam: 1) The influence of the pore size on the absorption characteristics must be effectively balanced. If the pore size is too small, the incidence of terahertz waves will be blocked, and the reflection on the surface of the material will be enhanced, thus reducing the absorption capacity; and If the pore size is too large, the attenuation effect of the terahertz wave inside the material will be reduced, so the thickness of the absorbing material has to be increased to increase the absorption rate
Because the existing 3D foam terahertz wave absorbing material adopts a single pore size, a compromise must be made between the absorption efficiency and thickness, and the best material performance cannot be achieved; 2) Because the highly conductive 3D graphene foam needs to pass through High-temperature annealing treatment, which makes the foam very brittle and has no flexible functions such as stretching, bending and pressure resistance, and its actual use effect is greatly limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terahertz absorbing material with gradient aperture structure and preparation method thereof
  • Terahertz absorbing material with gradient aperture structure and preparation method thereof
  • Terahertz absorbing material with gradient aperture structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0023] Step 1, preparing three-dimensional graphene with a nickel substrate and an average pore diameter of 110 μm. A template-guided chemical deposition method is used: nickel foam is used as the deposition substrate, methane is used as the growth carbon source, and a 100mm caliber quartz tube furnace is used as the growth equipment; nickel foam with an average pore size of 110 μm is placed in the tube furnace, and 10 sccm methane is introduced As the growth gas, the growth time is 30min; after completion, the methane gas is turned off, and the temperature is naturally lowered to room temperature.

[0024] Step 2, preparing three-dimensional graphene. Get concentration is 2mol / L hydrogen chloride (HCL) solution 10ml, concentration is 2mol / L iron trichloride (FeCl 3 ) solution 10ml, hydrogen chloride solution and ferric chloride solution are mixed to obtain a mixed solution; the three-dimensional graphene with a nickel substrate obtained in step 1 is put into the mixed soluti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
thicknessaaaaaaaaaa
pore sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a terahertz absorbing material with a gradient aperture structure, which belongs to the technical field of terahertz absorbing. The absorbing material includes three layers of three-dimensional graphene / PDMS composite material, the uppermost layer of three-dimensional graphene has a pore size range of 100-120 μm, the middle three-dimensional graphene has a pore size range of 50-70 μm, and the bottom layer of The pore diameter of three-dimensional graphene ranges from 20 to 40 μm. The terahertz absorbing material of the present invention has extremely strong broadband terahertz wave absorption characteristics, and the average absorption rate in the ultra-broadband spectrum range of 0.2-1.2THz is as high as 93% or more; the thickness is extremely thin, and the thickness of each layer is controlled Within 1mm, the total thickness of the terahertz absorbing material is within 3mm, which is far superior to existing terahertz absorbing foam materials; excellent flexible characteristics such as bendability, stretchability and mechanical elasticity; raw material prices are low, The preparation method is simple, and large-area preparation can be realized.

Description

technical field [0001] The invention belongs to the technical field of terahertz absorbing, and in particular relates to a three-dimensional graphene / PDMS terahertz absorbing material with a gradient aperture structure and a preparation method thereof. Background technique [0002] Terahertz (THz, 1THz=10 12 Hz) waves refer to electromagnetic waves with a frequency between 0.1THz-10THz and a wavelength between 0.03mm-0.3mm. Terahertz waves lie between infrared and millimeter waves in frequency. In the electromagnetic spectrum, the research on infrared technology and microwave technology has been very mature, but the research on terahertz wave is still in progress and has not been fully developed and applied. In recent years, with the rapid development of terahertz radiation sources and terahertz detectors, the progress of terahertz technology has gradually accelerated, showing great scientific value in the fields of physics, biology, astronomy, national defense, and mobile...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B32B9/00B32B9/04B32B3/24B32B33/00C08K3/04C08L83/04H01Q17/00
CPCB32B3/266B32B9/007B32B9/04B32B33/00B32B2260/04B32B2260/046B32B2307/20B32B2307/51B32B2307/54C08K2201/005C08K3/042H01Q17/00C08L83/04
Inventor 文岐业梁博何雨莲杨青慧陈智张怀武
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products