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Absorption film based on atomic layer deposition and manufacturing method thereof

An atomic layer deposition and absorption film technology, applied in the field of absorption film, can solve the problems of difficult to achieve full coverage, limited film uniformity, etc., and achieve the effects of good incident angle insensitivity, convenient preparation method, and good uniformity.

Inactive Publication Date: 2021-03-19
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the directional distribution and motion trajectory of deposited particles in the existing physical vapor deposition method, the spatial distribution is sensitive to the film thickness, so the uniformity of the thin film prepared on large curvature optical elements and complex surfaces is greatly limited.
By changing the airflow distribution, component trajectory, target position, etc., the uniformity of the film on the surface of regular large-curvature optical components can be improved, but it is still difficult to achieve full coverage for high aspect ratios and complex surfaces

Method used

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  • Absorption film based on atomic layer deposition and manufacturing method thereof
  • Absorption film based on atomic layer deposition and manufacturing method thereof
  • Absorption film based on atomic layer deposition and manufacturing method thereof

Examples

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Effect test

preparation example Construction

[0042] The preparation of the absorption film based on atomic layer deposition is mainly realized by adjusting the layer number and thickness of the atomic layer deposition absorption layer and dielectric layer material. Such as figure 2 As shown, the preparation process of the absorbing film based on atomic layer deposition is as follows:

[0043] (1) According to the absorption film material, dielectric film material and substrate material, as well as the requirements for the bandwidth and absorption rate of the absorber, using optical design software, by optimizing the thickness of each layer of film, design a visible-near optical film that can achieve the corresponding absorption characteristics. Infrared band absorbing film system.

[0044] (2) To clean the substrate, the substrate can be wiped with an ethanol / ether mixed solution, or the substrate can be cleaned by solution ultrasonic method: first, the substrate is ultrasonically cleaned in acetone solution, and then ...

Embodiment 1

[0058] Example 1: The specific film structure in the visible light band is preferably substrate|TiAlC(15nm)|SiO 2 (41nm)|TiAlC(240nm)|SiO 2 (17nm)|TiAlC(23nm)|SiO 2 (63nm), such as Figure 5 shown. The final equivalent admittance of the film system matches the admittance of the incident medium air, and when the incident beam is reflected on the surface of the film layer, it will produce a destructive interference effect, thereby reducing the reflection loss on the film system surface. When incident from the air side, the average reflectance of the visible light band 400-700nm is as low as 0.39%, such as Image 6 As shown in (a); when incident from the base side, the average reflectance of the visible light band 400-700nm is 0.91%, as Image 6 Shown in (b).

[0059] Absorption film structure substrate|TiAlC(15nm)|SiO 2 (41nm)|TiAlC(240nm)|SiO 2 (17nm)|TiAlC(23nm)|SiO 2 (63nm), the titanium-aluminum chemical compound TiAlC near the substrate is used as the absorbing laye...

Embodiment 2

[0060] Example 2: The absorbing film in the visible-near-infrared band is designed with total absorption in the 400-1100nm band, and the specific absorbing film structure is preferably substrate|TiAlC(10nm)|SiO 2 (60nm)|TiAlC(30nm)|SiO 2 (42nm)|TiAlC(230nm)|SiO 2 (28nm)|TiAlC(34nm)|SiO 2 (43nm)|TiAlC(21nm)|SiO 2 (80nm), such as Figure 8 As shown, when incident from the air side, the average reflectance of visible light-near infrared band 400-1100nm is as low as 0.77%, as Figure 9 As shown in (a); when incident from the base side, the average reflectance of visible light-near infrared band 400-1100nm is 0.50%, as Figure 9 Shown in (b).

[0061] Its absorption in the visible-near-infrared band is significantly increased. Since the middle absorbing layer is thick enough, no light is transmitted through the device, and the anti-reflection combination of the upper and lower layers further reduces the reflection loss in this band and improves the absorption efficiency. - Hi...

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Abstract

The invention discloses an absorption film based on atomic layer deposition. The absorption film is composed of a substrate and multiple layers of absorption film systems on the substrate, the multiple layers of absorption film systems are alternately composed of absorption film layers and dielectric film layers, and the absorption film layer is the innermost layer and is arranged close to the substrate; the dielectric film layer is the outermost layer; the multilayer absorption film system is obtained by an atomic layer deposition method. According to the invention, the advantages of the design and preparation of the absorption film and the atomic layer deposition technology are ingeniously combined, and the difficulty that the traditional physical vapor deposition method cannot meet thebasic requirements of uniformity and coverage rate of the deposited film of the large-curvature element is overcome. The absorptivity of the absorption film prepared through the atomic layer deposition technology can reach 99% or above within the designed waveband, and the absorption film can be importantly applied to the special fields of complex optical surfaces with high depth-to-width ratios,large-curvature optical elements and the like and is expected to be widely applied to the aspects of virtual reality, counterfeiting prevention and the like. Contributions are made to the fields of national economy, social development, science and technology, national defense construction and the like.

Description

technical field [0001] The invention proposes a novel absorption film based on atomic layer deposition and a manufacturing method thereof, and specifically relates to the fields of stray light elimination, detection, imaging and the like. Background technique [0002] Large-curvature optical components such as hemispherical lenses, aspheric mirrors, quartz tubes, etc., are important components in optical systems such as laser systems, optical microscope systems, and projection systems. In order to meet the requirements of different optical systems for transmittance, reflectivity and polarization, it is usually necessary to deposit thin films on the surface of large curvature optical elements, and the uniformity and coverage of the thin films have a great influence on the performance of the optical system (such as imaging quality, test accuracy, etc.) Significant influence. Due to the directional distribution and motion trajectory of deposited particles in the existing physi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/28C23C16/455C23C16/32C23C16/40
CPCG02B5/281G02B5/285C23C16/45529C23C16/32C23C16/402
Inventor 沈伟东郑婷婷章岳光杨陈楹王海兰陈潇
Owner ZHEJIANG UNIV
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