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GaN-based gas sensor and preparation method thereof

A gas sensor and substrate technology, applied in the direction of sensing nanotechnology, instruments, scientific instruments, etc., can solve the problems of false signals, poor temperature stability, measurement errors, etc., to achieve the elimination of false signals, high integration, Effect of improving temperature stability

Active Publication Date: 2020-10-02
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the carrier concentration of the semiconductor material is closely related to the temperature. The inventors of the present invention found that if the ambient temperature changes during the measurement process, the output signal of the semiconductor gas sensor will also change accordingly, and the temperature stability is poor, so that false signal, causing significant measurement errors

Method used

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  • GaN-based gas sensor and preparation method thereof
  • GaN-based gas sensor and preparation method thereof

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preparation example Construction

[0031] The invention provides a method for preparing a GaN-based gas sensor, such as figure 1 shown, including the following steps:

[0032] In step S1, the substrate is sampled and the surface of the substrate is pretreated with a concentrated phosphoric acid solution, which can improve the epitaxial growth effect of the GaN buffer layer.

[0033] Step S2, introducing solid Ga source, Al source and NH 3 source, using molecular beam epitaxy technology to sequentially epitaxially grow on the upper surface of the substrate pretreated in step S1: a GaN buffer layer with a thickness of 0.1mm~2mm, a semi-insulating GaN intrinsic layer with a thickness of 0.1mm~5mm and Al with a thickness of 10nm~100nm x Ga 1-x N layer (Al composition x value ranges from 0.1 to 0.5), where the substrate temperature is 500 o C~800 o C, the growth time is 30min~60min.

[0034] Step S3, using inductively coupled plasma chemical deposition technology in step S2 Al x Ga 1-x SiO with a thickness o...

Embodiment

[0043] A method for preparing a GaN-based gas sensor, comprising:

[0044] Step S1, sampling the sapphire substrate 1, and pretreating the surface of the sapphire substrate 1 with a concentrated phosphoric acid solution;

[0045] Step S2, introducing solid Ga source, Al source and NH 3 The source is epitaxially grown on the upper surface of the sapphire substrate 1 using MBE technology: 1mm thick GaN buffer layer 2, 1mm thick GaN intrinsic layer 3 and 50nm thick Al 0.3 Ga 0.7 N layer 4, wherein the temperature of sapphire substrate 1 is 600 o C, the growth time is 40min;

[0046] Step S3, using ICPCVD technology on Al 0.3 Ga 0.7 The upper surface of N layer 4 deposits 50nm thick SiO 2 Medium layer 5;

[0047] Step S4, using sputtering method on SiO 2 A 20nm thick noble metal Pd layer 6 is deposited on the upper surface of the dielectric layer 5;

[0048] Step S5, spin-coat a photoresist with a thickness of 1 mm on the upper surface of the noble metal Pd layer 6, and p...

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Abstract

The invention discloses a GaN-based gas sensor and a preparation method thereof, and belongs to the technical field of gas sensors, and the preparation method comprises the steps: sampling a substrate, and carrying out the pretreatment of the surface of the substrate through concentrated phosphoric acid; introducing a solid Ga source, an Al source and an NH3 source, and sequentially growing a GaNbuffer layer, a GaN intrinsic layer and an AlxGa1-xN layer on the substrate; depositing a SiO2 dielectric layer on the AlGaN layer; depositing a noble metal layer on the SiO2 dielectric layer; preparing two gate patterns on the noble metal layer, and removing the noble metal layer and the SiO2 dielectric layer outside the positions of the two gate patterns; respectively depositing metal on the AlGaN layer to form a signal output electrode, a power supply electrode and a grounding electrode; and depositing a Si3N4 layer on the noble metal layer at a gate pattern to obtain the GaN-based gas sensor. The GaN-based gas sensor is compact in structure, high in integration level, capable of adapting to a high-temperature environment, good in temperature stability and good in practicability.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a GaN-based gas sensor and a preparation method thereof. Background technique [0002] A gas sensor is a device that converts information such as gas composition and concentration into information that can be used by personnel, instruments, computers, etc. It has been widely used in environmental monitoring and weather forecasting systems. As a gas-sensing material, GaN material is mostly used in semiconductor gas sensors to detect harsh environments where toxic and harmful gases exist because of its multi-functional advantages such as temperature resistance and pressure resistance, wide operating range, and easy integration. However, the carrier concentration of the semiconductor material is closely related to the temperature. The inventors of the present invention found that if the ambient temperature changes during the measurement process, the output signal of the semicond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12B82Y15/00B82Y40/00
CPCB82Y15/00B82Y40/00G01N27/127
Inventor 仇志军叶怀宇张国旗
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA