Method of characterizing junction characteristics of semiconductor device
A technology of semiconductor and junction characteristics, applied in the direction of single semiconductor device testing, instruments, measuring devices, etc., can solve problems such as unseen electrical and physical parameters
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Embodiment 1
[0044] Taking the characterization of the GaAs-based laser diode (LD) with a wavelength of 780nm as an example for junction voltage, series resistance, and ideality factor characteristics, see figure 2 , where the square hollow box curve represents the device junction voltage curve, and the solid circle curve represents the device series resistance curve.
[0045] (1) Use precision impedance analysis instruments (HP, Agilent, and domestic instruments are all available) to measure the DC I-V characteristics of the device. Considering the internal resistance of all measuring instruments, you can choose to use current as the step size (1mA or lower can be used) ).
[0046] (2) Measure the AC characteristics under AC small signal. figure 1is the equivalent circuit diagram of the method for characterizing the junction characteristics of semiconductor devices in the present invention, wherein figure 1 (a) is the equivalent circuit diagram of the actual device, figure 1 (b) is th...
Embodiment 2
[0053] The junction characteristics (junction voltage, series resistance and ideality factor junction capacitance and junction conductance with the function relationship of applied current) of the wide bandgap GaN-based quantum well laser with a wavelength of 450nm: its measurement process is consistent with embodiment 1. First, measure the I-V of the device; secondly, measure the relationship between the apparent conductance and apparent capacitance of the device with voltage or current in parallel mode; finally, substitute the measured data into the equation group (9) in the content of the invention for solution.
[0054] As a result, the junction voltage characteristics of wide-bandgap GaN-based lasers are different from those of the aforementioned narrower-bandgap semiconductor lasers. In the threshold region, wide-bandgap GaN-based lasers V j Manifested by brief 'pinning' (or sinking) such as image 3 As shown by the square symbol curve, with the enhancement of injection,...
Embodiment 3
[0056] Series resistance of LD and LED: the measurement process is consistent with that of Example 1. The series resistance of these devices is variable, and its characteristics are similar to Example 2, except that these devices do not have a threshold region, so the curve changes continuously, that is, as the current increases, the series resistance gradually decreases, and the smaller the current, the series resistance The value is larger. The non-linearity of series resistance mainly comes from ohmic contact resistance and some high-resistance layers of heterojunctions, which generally correspond to dipole layers and space barriers, which is equivalent to the parallel connection of non-linear resistance and capacitance.
PUM
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