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Unit cell PN junction and precise construction method thereof

A technology of PN junction and single cell, applied in the field of PN junction, can solve the problem of difficult realization of PN junction

Active Publication Date: 2020-10-27
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this traditional PN junction is composed of different semiconductors. To achieve an ideal PN junction not only depends on their energy band arrangement, but also is significantly affected by other characteristics such as crystal structure and crystal parameters, making it difficult for traditional PN junctions to be used in semiconductors. Realized in practical application

Method used

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  • Unit cell PN junction and precise construction method thereof
  • Unit cell PN junction and precise construction method thereof
  • Unit cell PN junction and precise construction method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Fluorine-doped SnO 2 Conductive glass (conductive glass FTO) was continuously ultrasonicated in acetone, ethanol and deionized water for 30 minutes respectively, dried and set aside. Put zinc chloride, indium chloride and thiourea into a beaker according to the atomic ratio Zn:In:S=1:2:4, add an appropriate amount of deionized water and stir thoroughly to obtain a reaction solution. Then, put the dry conductive glass FTO into the polytetrafluoroethylene liner, slowly drop the reaction solution into the liner, the volume ratio of the conductive glass FTO to the reaction solution is 1:2, and the reaction solution does not completely immerse the conductive glass. Put the polytetrafluoroethylene liner into the autoclave, then put the autoclave into the oven, and react at 100°C for 24h. After the reaction was completed, the temperature was naturally cooled to room temperature. The reaction kettle was opened, and a film was formed on the conductive glass FTO. After the cond...

Embodiment 2

[0069] Fluorine-doped SnO 2 Conductive glass (conductive glass FTO) in concentrated H with a volume ratio of 3:1 2 SO 4 and H 2 o 2 Wash in the solution for 15 minutes, then ultrasonically clean in the solution for 5 minutes, dry and set aside. Zinc nitrate, indium sulfate and thioacetamide were put into a beaker according to the atomic ratio Zn:In:S=1:2:4, and an appropriate amount of deionized water was added for thorough stirring to obtain a reaction solution. Then, put the dry conductive glass FTO into the polytetrafluoroethylene liner, slowly drop the reaction solution into the liner, the volume ratio of the conductive glass FTO to the reaction solution is 1:10, and the reaction solution does not completely immerse the conductive glass. Put the polytetrafluoroethylene liner into the autoclave, then put the autoclave into the oven, and react at 200°C for 2h. After the reaction was completed, the temperature was naturally cooled to room temperature. The reaction kettl...

Embodiment 3

[0072] Fluorine-doped SnO 2 Conductive glass (conductive glass FTO) was cleaned in hydrofluoric acid and deionized water with a volume ratio of 1:10 for 15 minutes, then ultrasonically cleaned in the solution for 5 minutes, dried and set aside. Put zinc sulfate, indium sulfate and sodium thiosulfate into a beaker according to the atomic ratio Zn:In:S=1:2:4, add an appropriate amount of deionized water and stir thoroughly to obtain a reaction solution. Then, put the dry conductive glass FTO into the polytetrafluoroethylene liner, slowly drop the reaction solution into the liner, the volume ratio of the conductive glass FTO to the reaction solution is 1:6, and the reaction solution is not completely immersed in the conductive glass. Put the polytetrafluoroethylene liner into the autoclave, then put the autoclave into the oven, and react at 150°C for 15h. After the reaction was completed, the temperature was naturally cooled to room temperature. The reaction kettle was opened, ...

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Abstract

The invention belongs to the technical field of PN junctions, and provides a unit cell PN junction which is constructed in a unit cell by using a semiconductor material. The invention further providesa precise construction method of the unit cell PN junction. The unit cell PN junction is uniform and tidy and has transparency, and the size of the unit cell PN junction is micron-sized; the thickness of the unit cell PN junction is completely matched with the thickness of a unit cell semiconductor material and the number of atomic layers; the construction method provided by the invention has precise controllability, is widely applicable to various semiconductor materials, and has great significance for exerting the properties of the materials and further improving the photoelectrochemical performance.

Description

technical field [0001] The present invention relates to the technical field of PN junctions, in particular to a single-cell PN junction and its precise construction method. Background technique [0002] Photoelectrochemical splitting of water to produce hydrogen is a promising method that can effectively solve the problems of energy crisis and environmental pollution. However, the photoactivity of common semiconductors is limited by the few catalytic active sites and serious recombination of photogenerated carriers. The two-dimensional material with a unit cell thickness can not only expose almost all atoms to provide abundant catalytic active sites, but also can greatly shorten the distance from the bulk phase to the surface, thereby accelerating the separation and transport of photogenerated carriers, thereby reducing the bulk Composite. [0003] Due to the huge specific surface area of ​​such unit-cell-thick 2D materials, a single material still suffers from surface pho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/18B01J27/185B01J27/19C01B3/04
CPCB01J27/18B01J27/1853B01J27/19C01B3/042B01J35/40B01J35/39Y02E60/36Y02P20/133
Inventor 王煜张慧娟吴俣
Owner CHONGQING UNIV
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