Ingot furnace for directional solidification growth of crystalline silicon and application
A technology of growing crystals and directional solidification, applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems affecting the quality and yield of silicon ingots, uneven concave-convex interface of silicon ingots, and interface inhomogeneity, etc. Achieve the effect of improving quality and yield, excellent semiconductor performance, and improving the concave-convex interface
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[0085] Another embodiment of the present invention also provides a method for preparing a silicon ingot, comprising:
[0086] Provide an ingot furnace for directional solidification and growth of crystalline silicon, and lay a seed crystal layer in the crucible of the ingot furnace;
[0087] Fill the silicon material above the seed crystal layer, and heat the silicon material in the crucible to melt into a silicon melt; when the seed crystal layer is not completely melted, adjust the thermal field to form a supercooled state, so that the The silicon melt begins to grow crystals on the basis of the seed layer;
[0088] After all the silicon melts are crystallized, they are annealed and cooled to obtain silicon ingots.
[0089] Among them, there are still certain differences in the specific preparation process among the monocrystalline silicon ingot, polycrystalline silicon ingot and quasi-single crystal silicon ingot, including silicon material, temperature, reaction time and ...
Embodiment 1
[0091] Embodiment 1 A method for preparing a monocrystalline silicon ingot, comprising:
[0092] Provide the ingot furnace for directional solidification and growth of crystalline silicon described in the embodiment of the present invention, adopt a crucible of G6 specification, and the inner diameter of the crucible is 1000mm*1000mm; the bottom and side walls of the crucible are spray-coated with silicon nitride coating, and a A single crystal seed layer with a layer thickness of 20 mm;
[0093] Fill the silicon material above the seed crystal layer, turn on the circulating cooling water system, and turn on the rotating motor to rotate and heat the crucible, and melt the silicon material in the crucible into a silicon melt; when the seed crystal layer is not completely melted , adjust the thermal field to form a supercooled state, so that the silicon melt starts to grow on the basis of the seed layer;
[0094] After all the silicon melts are crystallized, they are annealed a...
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Abstract
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