Ingot furnace for directional solidification growth of crystalline silicon and application

A technology of growing crystals and directional solidification, applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems affecting the quality and yield of silicon ingots, uneven concave-convex interface of silicon ingots, and interface inhomogeneity, etc. Achieve the effect of improving quality and yield, excellent semiconductor performance, and improving the concave-convex interface

Pending Publication Date: 2020-11-10
LDK SOLAR XINYU HI TECH XINYU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, inhomogeneity of heating is common in traditional ingot furnaces, which leads to inhomogeneity in the interface of ingot single crystal growth; and there are a large number of uneven uneven interfaces on the four sides of the prepared silicon ingot, resulting in a large number of ingots. The tail red zone seriously affects the quality and yield of silicon ingots

Method used

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  • Ingot furnace for directional solidification growth of crystalline silicon and application
  • Ingot furnace for directional solidification growth of crystalline silicon and application
  • Ingot furnace for directional solidification growth of crystalline silicon and application

Examples

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preparation example Construction

[0085] Another embodiment of the present invention also provides a method for preparing a silicon ingot, comprising:

[0086] Provide an ingot furnace for directional solidification and growth of crystalline silicon, and lay a seed crystal layer in the crucible of the ingot furnace;

[0087] Fill the silicon material above the seed crystal layer, and heat the silicon material in the crucible to melt into a silicon melt; when the seed crystal layer is not completely melted, adjust the thermal field to form a supercooled state, so that the The silicon melt begins to grow crystals on the basis of the seed layer;

[0088] After all the silicon melts are crystallized, they are annealed and cooled to obtain silicon ingots.

[0089] Among them, there are still certain differences in the specific preparation process among the monocrystalline silicon ingot, polycrystalline silicon ingot and quasi-single crystal silicon ingot, including silicon material, temperature, reaction time and ...

Embodiment 1

[0091] Embodiment 1 A method for preparing a monocrystalline silicon ingot, comprising:

[0092] Provide the ingot furnace for directional solidification and growth of crystalline silicon described in the embodiment of the present invention, adopt a crucible of G6 specification, and the inner diameter of the crucible is 1000mm*1000mm; the bottom and side walls of the crucible are spray-coated with silicon nitride coating, and a A single crystal seed layer with a layer thickness of 20 mm;

[0093] Fill the silicon material above the seed crystal layer, turn on the circulating cooling water system, and turn on the rotating motor to rotate and heat the crucible, and melt the silicon material in the crucible into a silicon melt; when the seed crystal layer is not completely melted , adjust the thermal field to form a supercooled state, so that the silicon melt starts to grow on the basis of the seed layer;

[0094] After all the silicon melts are crystallized, they are annealed a...

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Abstract

The embodiment of the invention provides an ingot furnace for directional solidification growth of crystalline silicon, and the furnace comprises a furnace body, wherein the furnace body comprises anupper furnace body and a lower furnace body which are matched with each other, and the bottom of the lower furnace body is provided with a shaft hole; a supporting table which comprises a rotating shaft and a heat exchange table fixed to one end of the rotating shaft, wherein a crucible is arranged on the heat exchange table, the other end of the rotating shaft penetrates through the shaft hole and is connected with a rotating driving device arranged outside the lower furnace body, a cooling liquid circulating pipeline is further arranged in the rotating shaft, and the cooling liquid circulating pipeline is used for introducing cooling liquid and allowing the cooling liquid to flow circularly so as to achieve circulating cooling of the rotating shaft; a protective plate, a heat insulationcage and a heater. The ingot furnace realizes uniform heating of the crucible, can greatly improve a large number of concave-convex interfaces existing on each side surface of the silicon ingot, can significantly reduce the red area at the tail part of the prepared silicon ingot, and improves the quality and outturn percentage of the silicon ingot. The invention further provides application of theingot furnace.

Description

technical field [0001] The invention relates to the technical field of crystalline silicon ingot furnaces, in particular to an ingot furnace for directional solidification and growth of crystalline silicon and its application. Background technique [0002] Solar photovoltaic power generation is one of the most potential renewable energy utilization methods. Among them, crystalline silicon solar cells continue to maintain a leading position due to their high conversion efficiency and mature technology. The photoelectric conversion efficiency, attenuation rate and cost of crystalline silicon solar cells are closely related to the quality of crystalline silicon used, which requires the control of various conditions that affect the quality of crystalline silicon, including crystal phase, defects, impurities, etc., during the manufacturing process of crystalline silicon . [0003] At present, in the industry, the ingot furnace is the main equipment for preparing crystalline sil...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B11/00C30B28/06
CPCC30B29/06C30B11/00C30B28/06C30B11/003C30B11/002
Inventor 陈仙辉邹贵付何亮毛伟雷琦
Owner LDK SOLAR XINYU HI TECH XINYU CO LTD
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