Anti-radiation reinforced SOI device based on neutron irradiation and preparation method thereof

Abstract

The invention discloses an anti-radiation reinforced SOI device based on neutron irradiation and a preparation method thereof. The device comprises a substrate, a buried oxide layer, a body region, asource region, a drain region and a gate region arranged on the body region, wherein the substrate, the buried oxide layer and the body region are sequentially formed from bottom to top; the source region and the drain region are arranged on the same layer as the body region and isolated from each other; and a deep energy level trap introduced through fast neutron irradiation is arranged in the body region. The preparation method comprises the following steps: step 1, respectively growing oxide layers on the device substrate and a mechanical support substrate; 2, performing fast neutron irradiation on the oxide layer of the device substrate to form the deep energy level trap in a silicon layer of the device substrate; 3, bonding the oxide layer of the mechanical support substrate and theoxide layer of the device substrate subjected to fast neutron irradiation to form the integral buried oxide layer; step 4, processing the bonded device substrate to enable the surface layer of the silicon layer to recover the single crystal state again; and step 5, carrying out device tape-out on the device substrate of which the surface layer of the silicon layer is recovered to the single crystal state to prepare the device.

Description

technical field [0001] The invention relates to the field of semiconductor materials and device preparation, in particular to a radiation-resistant and reinforced SOI device based on neutron irradiation and a preparation method thereof. Background technique [0002] SOI (Silicon-on-Insulator) technology refers to the material preparation technology of forming a single crystal semiconductor silicon thin film layer with a certain thickness on the insulating layer and the process technology of manufacturing semiconductor devices on the thin film layer. SOI technology can realize full dielectric isolation of devices. Compared with bulk silicon technology isolated by PN junction, it has the advantages of no latch, high speed, low power consumption, high integration, high temperature resistance, and strong radiation resistance. It is widely used in high-speed, low power consumption, and radiation-resistant circuits. [0003] Since the SOI process MOS device is formed above the bu...

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Problems solved by technology

This method also requires the introduction of additional Ge elements, and the junction depth of the SiGe junction is difficult to control

3. Additional lead-out methods, such as H gate, T gate, ring gate, etc. These methods increase the area of ​​the active area of ​​the device, and for large-width devices, the body lead-out resistance becomes larger, and the body lead-out effect is not good

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