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Silicon carbide Schottky diode and preparation method thereof

A Schottky diode and silicon carbide technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low reverse breakdown voltage and large reverse leakage current, and reduce reverse leakage Current, the effect of increasing the reverse breakdown voltage

Pending Publication Date: 2020-11-24
GTA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a silicon carbide Schottky diode and its preparation method in order to overcome the defects of low reverse breakdown voltage and large reverse leakage current of Schottky diodes in the prior art

Method used

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  • Silicon carbide Schottky diode and preparation method thereof
  • Silicon carbide Schottky diode and preparation method thereof
  • Silicon carbide Schottky diode and preparation method thereof

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Embodiment 1

[0041] This embodiment provides a method for preparing a silicon carbide Schottky diode, figure 1 A flowchart of this embodiment is shown. see figure 1 , the preparation method of the present embodiment comprises:

[0042] S1. Fabricate a SiC epitaxial wafer, the SiC epitaxial wafer includes a SiC substrate layer, and an SiC epitaxial layer is provided on the upper surface of the SiC substrate layer.

[0043] S2. Forming a P-type floating ring inside the SiC epitaxial layer.

[0044] S3, forming a P-type guard ring on the inner upper surface of the SiC epitaxial layer.

[0045] S4, forming a Schottky contact region on the upper surface of the SiC epitaxial layer.

[0046] S5, setting an anode electrode on the Schottky contact region.

[0047] Among them, metals such as Pt / Au / Ti can be selected as the anode electrode.

[0048] S6, forming an ohmic contact region on the lower surface of the SiC substrate layer.

[0049] Among them, the metal Au / Ti is evaporated and anneal...

Embodiment 2

[0053] This embodiment provides a method for preparing a silicon carbide Schottky diode, which is a further improvement on the basis of Embodiment 1. figure 2 The specific steps of forming a P-type floating ring inside the SiC epitaxial layer are shown. see figure 2 , the specific steps include:

[0054] S2-1, growing a layer of SiO on the upper surface of the SiC epitaxial layer by PCVD 2 film.

[0055] Among them, PCVD (Plasma-enhanced Chemical Vapor Deposition), that is, plasma chemical vapor deposition, refers to the method of depositing a thin film on a workpiece at a specific temperature by using a gas containing the constituent atoms of the thin film and using a radio frequency electric field to make the gas form a plasma. This method is widely used in the semiconductor industry.

[0056] S2-2, for the SiO 2 The thin film uses photolithography to determine the position of the P-type floating ring.

[0057] Among them, in the SiO 2 After performing photolithogra...

Embodiment 3

[0063] This embodiment provides a method for preparing a silicon carbide Schottky diode, which is a further improvement on the basis of Embodiment 1 or 2. image 3 The specific steps of forming a P-type guard ring inside the SiC epitaxial layer are shown. see image 3 , the specific steps include:

[0064] S3-1, growing a layer of SiO on the inner upper surface of the SiC epitaxial layer by PCVD 2 film.

[0065] S3-2, for the SiO 2 The thin film uses photolithography to determine the position of the P-type guard ring.

[0066] Among them, in the SiO2 After performing photolithography on the thin film to determine the position of the P-type guard ring, remove the SiO at the position where the P-type guard ring is to be formed. 2 film.

[0067] S3-3. High-energy implantation of B or Al at a certain position to form a P-type protective ring.

[0068] Among them, the energy range of high energy is 200KeV-1MeV.

[0069] In this embodiment, the surface electric field intensi...

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Abstract

The invention discloses a silicon carbide Schottky diode and a preparation method thereof. The preparation method of the silicon carbide Schottky diode comprises the steps of: manufacturing a SiC epitaxial wafer, wherein the SiC epitaxial wafer comprises a SiC substrate layer, and a SiC epitaxial layer is arranged on the upper surface of the SiC substrate layer; forming a P-type floating ring in the SiC epitaxial layer; forming a P-type protection ring on the upper surface of the interior of the SiC epitaxial layer; forming a Schottky contact region on the upper surface of the SiC epitaxial layer; arranging an anode electrode in the Schottky contact region; forming an ohmic contact region on the lower surface of the SiC substrate layer; and arranging a cathode electrode in the ohmic contact region. The floating P-type ring is adopted to form a PN junction to shield an electric field, and the purposes of improving reverse breakdown voltage and reducing reverse leakage current are achieved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a silicon carbide Schottky diode and a preparation method thereof. Background technique [0002] Silicon carbide (SiC), as a representative of the third-generation wide bandgap semiconductor material, has properties such as high thermal conductivity, high electron saturation migration rate, and high breakdown electric field. Compared with the first-generation and second-generation semiconductors, SiC has more advantages in the fields of high-temperature, high-voltage, high-frequency, and high-power electronic devices. Defects. [0003] The principle of the Schottky diode is a metal-semiconductor junction formed by metal-semiconductor contact. Its forward conduction voltage and forward voltage drop are lower than those of a PN junction diode, and because it is a majority carrier device, the opposite The direction recovery time is relatively short, which can be several nanoseconds. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329
CPCH01L29/872H01L29/6606H01L29/0638H01L29/0623
Inventor 郎金荣刘奇斌程小强
Owner GTA SEMICON CO LTD
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