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Semiconductor optical integrated device

一种集成元件、半导体的技术，应用在半导体光集成元件领域，能够解决难高输出化、LD及调温元件耗电量增大等问题，达到驱动电流少的效果

Active Publication Date: 2020-11-24
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to increase the output due to the limitations of the increase in the light output of the LD, the increase in the power consumption of the LD and the temperature control element, and the deterioration of the extinction characteristic of the EAM along with the increase in the light input to the EAM.

Method used

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  • Semiconductor optical integrated device
  • Semiconductor optical integrated device
  • Semiconductor optical integrated device

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Experimental program
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Effect test

Embodiment approach 2

[0055] Figure 12 It is a conceptual diagram showing the structure of the main part of the semiconductor optical integrated device according to Embodiment 2. and Figure 1 The difference in structure is that the N-side cladding between the modulator 102 and the semiconductor optical amplifier 103 is not the Fe-doped semi-insulating InP layer 19, but a Zn diffusion region 24 which is P-typed by impurity diffusion. In this way, it is only necessary that the modulator 102 and the semiconductor optical amplifier 103 are made of electrically insulating materials, and various semi-insulating semiconductor materials can be used.

[0056] Focusing on the parts different from the manufacturing method described in Embodiment 1, refer to Figure 13 A, b to Figure 16 A, b, right. Figure 12 The manufacturing method of semiconductor optical integrated element is described. First, such as Figure 13 As shown in figure A, an Fe-doped semi-insulating InP layer 3, an n-InGaAsP contact layer 4 and an n...

Embodiment approach 3

[0062] Figure 17 It is a conceptual diagram showing the structure of the main part of the semiconductor optical integrated device according to Embodiment 3. This structure is a basic structure of an element realized on a semi-insulating semiconductor substrate 104. There is a structure in which an n-InGaAsP contact layer, which is an n-side contact layer provided on a semi-insulating semiconductor substrate 104, is separated into an n-side contact layer 41 and an n-side contact layer 43 between a modulator 102 and a semiconductor optical amplifier 103. Then, by replacing the N-side cladding between the modulator 102 and the semiconductor optical amplifier 103 with the Fe-doped semi-insulating InP layer 19, the cathode of the semiconductor optical amplifier 103 is electrically insulated from the semiconductor laser 101 and the modulator 102. Other structures and Figure 1 Same. Since cathodes are obtained from the N-side contact electrode 251 on the N-side contact layer 41 of the s...

Embodiment approach 4

[0070] Figure 21 It is a conceptual diagram showing the structure of the main part of the semiconductor optical integrated device according to Embodiment 4. Embodiment 4 is a semiconductor optical integrated device in which a plurality of semiconductor lasers 101 and at least one semiconductor optical amplifier 103 are monolithically integrated on the same semiconductor substrate. For convenience, Figure 21 There is shown a configuration example in which two semiconductor lasers 101 are integrated in parallel, and the outputs of the two semiconductor lasers 101 are multiplexed by an optical multiplexer 105 and input to a semiconductor optical amplifier 103. Figure 21 As in Embodiment 1 or Embodiment 2, an N-type InP substrate 1, which is a conductive semiconductor substrate, is used as the semiconductor substrate.

[0071] and Figure 1Similarly, the N-side cladding layer between the semiconductor laser 101 and the optical multiplexer 105 is replaced by the Fe-doped semi-insulatin...

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Abstract

Provided is a semiconductor optical integrated device in which a first semiconductor optical device (101) and a second semiconductor optical device (103) are monolithically integrated on one surface of one semiconductor substrate (1, 104), wherein an n-side cladding layer (51) of the first semiconductor optical device (101) and an n-side cladding layer (53) of the second semiconductor optical device (103) are electrically insulated, an n-side contact layer (41, 43) for electrical connection to at least one n-side cladding layer (51, 53) of the first semiconductor optical device (101) and the second semiconductor optical device (103) is provided between the at least one n-side cladding layer (51, 53) and the semiconductor substrate (1, 104), and the n-side contact layer (41, 43) and a p-side cladding layer (9) of a different semiconductor optical device (101, 103) from the semiconductor optical device (101, 103) provided with the n-side contact layer (41, 43) are electrically connected.

Description

Technical field [0001] The application relates to a semiconductor optical integrated element integrated with a semiconductor optical element. technical background [0002] In the access system, which is the optical communication system between the relay station and the user, DML：Directly Modulated Laser) which is suitable for low-speed modulation is mostly used at present, but in the case of high-speed communication of 10Gb / s or more, EML (Electro-absorption Modulator Integrated Laser) is a semiconductor light integration element that integrates electric field absorption semiconductor light modulator (EAM) and distributed feedback semiconductor laser (DFB-LD) which are suitable for high-speed modulation, and sometimes referred to as LD for simplicity. In an access system, since the optical signal is branched with respect to a plurality of users, the signal light intensity is attenuated. Therefore, before branching, the high output of the semiconductor laser transmitter becomes a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/026H01L27/15H01S5/40
CPCH01L27/15H01S5/0265H01S5/50H01S5/0208H01S5/4018H01S5/04256H01S5/4012
Inventor 松本启资石村荣太郎加治屋哲西川智志
Owner MITSUBISHI ELECTRIC CORP